水雾化制备Fe74Al4Sn2P10C2B4Si4非晶合金粉末及其磁粉芯性能研究

采用水雾化方法制备Fe7Al4Sn2P10C2B4Si4合金粉末,研究发现该合金具有强的非晶形成能力和高热稳定性,在粉末粒度小于400目时可以形成非晶态合金.采用该非晶粉末制备的磁粉芯在高频下品质因数显著高于MPP粉芯,说明该磁粉芯高频损耗较低.分析表明,非晶合金磁粉芯高频下损耗低的主要原因是电阻率较高.     

Laves相贮氢合金及其在Ni／MH电池中的研究进展

Ｌａｖｅｓ相贮氢合金是目前贮氢材料研究与开发的热点之一。本文概述了Ｌａｖｅｓ相合金的结构、贮氢机理、贮氢性能以及它在Ｎｉ／ＭＨ电池应用中的最新进展。     

Experimental Study of Capillary Effect in Porous Silicon Using Micro-Raman Spectroscopy and X-Ray Diffraction

We investigate the capillary effect and the residual stress evolution in the wetting, drying and rewetting stages of porous silicon using x-ray diffraction and micro-Raman spectroscopy. A reversible capillary effect and an irreversible oxidation effect are the driving forces for the residual stress evolution. The lattice expansion of the porous-silicon layer is observed to decrease slightly by x-ray diffraction and the tensile residual stress increases rapidly by micro-Raman spectroscopy, with the change of about 82 MPa for the oxidation effect and the change of 2.78 GPa (enough for cracking) for the capillary effect. Therefore, the capillary effect plays a major role in the residual stress evolution in the stages. A simple microscopic liquid-bridge model is introduced to explain the capillary effect and its reversibility. The capillary emergence has a close relation with a great deal of the micro-pore structure of porous silicon.     

渗滤的系统及其分析及其数学模型

对于两相体系和多相体系有多孔介质中的渗滤分离过程进行数学模拟，并求解出这一过程．     

热处理对V-4Ti合金氦的滞留与热解吸行为的影响

钒合金由于其低中子诱导的放射性和良好的高温性能被认为是未来聚变堆很有希望的第一壁和结构材料。因为氦可以通过放电清洗和中子嬗变产生，氦的滞留与热释放行为将是钒合金在聚变堆应用的重要课题。A．V．Veen领导的研究小组用1keV的氦离子注入到10^13-10^14He／cm^2的剂量研究了钒合金的氦俘获和热解吸机理以及预退火处理的影响。两群热解吸峰被发现，他们认为一个对应于氦，空位一杂质链，另一个对应于氦，带有钒合金原有的缺陷，如细小的析出物所俘获。既然钒合金原有的缺陷与退火处理有关，热处理对氦在钒合金中的滞留的影响是可以预期的，并且已被实验所证实。     

纳米Mg-Ni合金的制备技术

纳米Mg-Ni贮氢材料具有成本低，活化容易、贮氢容量大，吸放氢动力学性能优异等特点，有很大的应用前景。本文用机械合金化法进行了纳米Mg-Ni合金的制备，且对制备的粉末进行了XRD，TEM，SEM等微观结构的分析。     

Time—Resolved Photoluminescence Studies of AlInGaN Alloys

We study the two samples of AlInGaN,i.e.,1-μm Gan grown at 1030℃ on the buffer and followed by a 0.6μm-thick epilayer of AlInGaN under the low pressure of 76 Torr and the AlInGaN layer deposited diectly on the buffer layer without the high-temperature GaN layer,by temperature-dependent photoluminescence(PL) spectroscopy and picosecond time-resolved photoluminescence(TRPL) spectroscopy.The TRPL signals of both the samples were fitted well as a stretched exponential decay at all temperatures,indicating significant disorder in the material.We attribute the disorder to nanoscale quantum dots or discs of high indium concentration.Temperature dependence of dispersive exponent β shows that the stretched exponential decay of the two samples comes from dfferent mechanisms.The different depths of the localization potential account for the difference,which is illustrated by the results of temperature dependence of radiative recombination lifetime and PL peak energy.     

量子限制效应对多孔硅液相电致发光的影响

着重研究多孔硅在阴极偏压下过硫酸铵溶液中电压调制的电致发光现象 .随阴极偏压的增大 ,电致荧光峰位蓝移 ,荧光强度增大 ,同时发现定电压下 ,发生电致发光随时间的衰减伴随着光谱的红移现象 .通过红外光谱、AFM及电化学等手段对电致发光的电位调制机理及荧光衰减机制进行了研究 ,结果表明电致发光与光致发光具有相同的起源 ,电压选择激发不同粒径的多孔硅 ,而导致了发光峰值能量的电位选择性 .在电致发光过程中 ,强氧化剂向多孔硅注入空穴使其表面氧化导致小粒径的硅晶逐渐被剥落 ,使光谱高能部分首先衰减出现了随时间的电致发光红移现象 .这些结果支持量子限制效应在多孔硅液相电致发光中起着重要作用