红光激发下掺Ho3+氟化物薄膜的上转换发光

利用激光脉冲沉淀法制备了稀土Ho~(3 )掺杂的氟化物薄膜。观测到处于薄膜中的Ho~(3 )离子在632.8nm红光激发下的上转换发射。这些上转换发射包括:~5S_2→~5I_7,~5F_4→~5I_7和~5S_2→~5I_8。     

双驱动x射线激光等离子体能谱特性研究

用时间积分空间分辨的平晶千电子伏谱仪测量了钽激光等离子体发射波长范围为045— 075nm的软x射线能谱，精确测量和准确辨认出类镍、类钴和类铁离子的共振线及类镍离子 的内壳层跃迁线-对实验结果处理，获得了辐射线谱的强度-通过谱线比率的诊断推断脉冲激 光时差对等离子体状态的影响，至少也可部分解释激光上能级的粒子数及等离子体的 电离程度- 关键词： 离子谱特性 软x线能谱强度 谱线辨认     

SO^-（^2B1）离子的结构与势能函数

用二次组态相互作用方法，在6-311G(d)基组水平上对SO2^-离子进行了理论计算，得到了它的结构、能量、谐振频率和力学性质，其结果与实验值符合得非常好．在此计算的基础上，应用多体展式理论方法推导出SO2^-离子的解析势能函数，该函数正确反映了SO2^-离子的结构特征和能量变化．     

高电荷态Ar^q＋与Ne碰撞中入射离子电荷交换截面的研究

报道Ar^q Ne(q=8，9，11，12)碰撞体系中多电子转移过程，得到了多组实验测量电荷交换截面数据，讨论入射离子电荷交换截面、反冲离子产生截面与入射离子电荷态、能量以及散射离子电荷态的关系，并且将实验结果与Ar^q Ar碰撞体系进行对比研究。在修正分子库仑过垒模型的基础上，对实验现象做了合理的解释。     

酸糖蛋白手性柱分离6种手性化合物

通过考察缓冲液种类、浓度及其pH值对对映体在手性柱上的保留和分离行为的影响,以及流动相中加入不同种类、不同浓度的不带电荷的有机溶剂乙腈、甲醇、正丙醇、异丙醇、流动相流速和柱温对对映体分离能力的影响,优化了含碳手性中心的碱性药物苯丙哌林、酸性化合物MT-A5及MT-酸和含硫手性中心的质子泵抑制剂奥美拉唑、泮托拉唑、雷贝拉唑对映体分离条件,最佳手性分离条件为:苯丙哌林,0.05 mol/L磷酸二氢铵缓冲液(pH 3.0)-乙腈(95∶5,V/V)为流动相,流速为0.7 mL/m in,柱温为20℃;MT-A5及MT-酸,流动相为0.01 mol/L醋酸铵缓冲液(pH 5.0)-乙腈(74∶26,V/V),流速为0.9 mL/m in,柱温为20℃;泮托拉唑,流动相为10 mmol/L醋酸铵缓冲液(pH 5.5)-乙腈(93∶7,V/V),流速为0.9 mL/m in;柱温为20℃;奥美拉唑和雷贝拉唑,流动相为0.01 mol/L醋酸铵缓冲液(pH 3.0)-乙腈(95∶5,V/V),流速为0.7 mL/m in,柱温为20℃。实现了应用高效液相色谱法在α1-酸糖蛋白手性柱上对上述化合物的对映体分离,并成功用于手性药物合成中的对映体过量百分率的测定。     

等电荷态离子与He原子碰撞中的转移电离过程研究

采用位置灵敏探测和飞行时间技术测量了等电荷态离子C^q 、N^q 、O^q 、Ne^q (q=4，5，6，7)与He原子碰撞中，转移电离截面与单电子俘获截面的比值Ro研究了相同q入射的情况下，R与入射离子核电荷数Z的依赖关系。在统计蒸发模型的基础上对实验结果进行了解释。     

Deposition of Diamond-Like carbon Films by High-Intensity Pulsed Ion Beam Ablation at Various Substrate Temperatures

Diamond-like carbon (DLC) films have been deposited on to Si substrates at substrate temperatures from 255℃ to 400O℃ by a high-intensity pulsed-ion-beam (HIPIB) ablation deposition technique. The formation of DLC is confirmed by Raman spectroscopy. According to an x-ray photoelectron spectroscopy analysis, the concentration of sp^3 carbon in the films is about 40% when the substrate temperature is below 300℃ C. With increasing substratetemperature from 25℃ to 400℃, the concentration of sp^3 carbon decreases from 43% to 8%. In other words,sp3 carbon is graphitized into sp^2 carbon when the substrate temperature is above 300℃. The results of xray diffraction and atomic force microscopy show that, with increasing the substrate temperature, the surface roughness and the friction coefficient increase, and the microhardness and the residual stress of the films decrease.     

Efficient Visible Electroluminescence from Porous Silicon Diodes Passivated by Carbon Films

By using n-butylamine as a carbon resource,carbon film is deposited on the p-n porous silicon (PS) surface with a radio-frequency glow discharge plasma system.Raman spectra and infrared reflection (IR) spectra of the carbon films indicate that there are amine-group and hydrogen atoms therein.The IR spectra of the passivated PS samples exhibit that the PS surfaces are mainly covered with Si-C,Si-N and Si-O bonds.Electroluminescence (EL) spectra show that the EL intensity of the passivated PS diodes increases greatly and the blueshift of the EL peak occurs compared with the diodes without treatment.Both of these are stable while the passivated diodes are exposed to the air indoors.The I-V characteristics reveal that the passivated diodes have a smaller series resistance and a lower onset voltage.The influence of the carbon film passivation on EL properties of PS has also been discussed.The results have proven that carbon film passivation is a good way to enhance the PS luminescent intensity and stability.