Momentum Transfer Dependence of Two Types of the Broad Enhancement Phenomena： CO Spectra in the Valence Energy Region

Partial generalized oscillator strength densities of CO molecules related to the excitation of a 5σ or 1π electron are calculated by using multi-scattering self-consistent-field methods.Momentum transfer dependence of two types of the broad enhancement phenomena above the threshold with one-electron character,i.e. shape resonance and non-resonance enhancement,is studied.Our calculations show that the energy position of a non-resonance enhancement is related to the momentum transfer K.Therefore,electron impact based experiments can be used to identify the two types of the broad enhancement phenomena.     

Eu,Dy共掺杂SrAl2O4长余辉材料制备新工艺

活化Al-Sr合金粉末水解制备SrAl₂O₄长余辉材料的前驱体,并采用高温固相反应法制备出Eu,Dy共掺杂的SrAl₂O₄长余辉材料,对其微观结构和发光特性进行了研究。实验结果表明:前驱体中Al、Sr元素在微观状态下分布均匀,所制成的长余辉发光材料的发射主峰位于520nm附近,为典型的Eu²⁺离子4f5d-4f的特征发射,初始亮度达到18cd/m²,余辉时间长达46h。     

长余辉材料Sr_2MgSi_2O_7∶Eu~(2+),Dy~(3+)中稀土离子的发光特性

利用同步辐射光源(德国HASYLAB实验室的SUPERLUMI实验站)和真空紫外激光(157.6nm)对新型蓝光发射长余辉材料Sr2MgSi2O7∶Eu2 (0·2%),Dy3 (8%)进行了光谱研究。在170nm同步辐射光源激发下,观察到对应Eu2 :5d-4f跃迁的477nm发射带和对应Dy3 :4f-4f跃迁的两组线谱发射,其中只有来自Eu2 的5d-4f发射对长余辉光谱有贡献。在157.6nm激光激发下,除了上述发射外,还明显观察到对应Eu3 的红色线谱(590,614,626nm)。结合这些光谱特性,对Sr2MgSi2O7∶Eu2 ,Dy3 中稀土离子的发光特性以及长余辉发光机理进行了讨论,并提出了Eu2 充当空穴陷阱的可能性。     

具有新光学性质的Zn-Zn2SiO4纳米同轴线阵列

采用气相沉积技术在Si衬底上生长了Zn-Zn₂SiO₄芯-壳结构纳米同轴线阵列。根部呈笋状的纳米同轴线,直径约100nm,长度可以超过10μm;同轴线芯直径约50nm、壳层厚约25nm。通过X射线衍射的表征以及能量色散谱的线扫描,确定纳米同轴线的芯为Zn,壳层为Zn₂SiO₄。我们提出了一种新的生长机制,同时也为生长均匀的纳米同轴线提供一种新的技术。观察阴极荧光谱发现,纳米同轴线有三个主要发光带:强度最大的中紫外300nm发光、较弱的可见光区560nm以及红外谱区865nm的发光。对纳米同轴线截面的300nm发光峰观测发现,中紫外发光来源于Zn₂SiO₄壳层。正是这种同轴线的结构,使得其具备特殊的光学性质。     

光功能纳米陶瓷材料研究取得重要成果

~~光功能纳米陶瓷材料研究取得重要成果@汪道友~~     

High—Efficiency Organic Double—Quantum—Well Light—Emitting Devices Using 5,6,11,12—Tetraphenylnaphthacene Sub—monolayer as Potential Well

The double-quantum-well organic light-emitting devices of indium-tin-oxide (ITO)/NPB (50nm)/rubrene (0.05nm)/NPB (4nm)/rubrene (0.05nm)/Alq3 (50nm)/LiF (0.5nm)/Al were fabricated, in which N,N-bis-(1-naphthyl)-N,N‘-diphenyl-1,1‘-biphenyl-4,4‘‘‘‘‘‘‘‘-diamine (NPB) is used as a barrier potential or hole transport layer, tris (8-hydroxyquinoline) aluminium (Alq3) used as electron transport layer, and 5,6,11,12-tetraphenylnaphthacene (rubrene) as a potential well and emitter. The brightness can reach 18610cd/m^2 at 13V. The maximum electroluminescent efficiency of the device was 6.61cd/A at 7V, which was higher than that of common dope-type devices. In addition, the electroluminescence efficiency is relatively independent of the drive voltage in the range from 5 to 13V.     

Stopband Phenomena in the Passband of Left-Handed Metamaterials

Stopband phenomena are reported in the passband of left-handed metamaterials. The samples with linear defect are designed by removing one layer of split ring resonators （SRRs）. It is shown that the left-handed transmission peaks have a distinct transform with the relative deviation of the SRRs centre from the wire centre 8, from a single left-handed peak, double left-handed peaks with different magnitude to no transmission peak, i.e. left-handed properties of metamaterials disappear. Numerical simulation shows that the change of 8 makes the effective permeability shift at a frequency range, where stopband occurs. It is thought that the stopband in left-handed passband is due to the symmetry breaking between SRRs and wires in the metamaterials.     

激发态卟啉衍生物研究(Ⅶ)——取代基对卟啉—硝基苯化合物发光特性的影响

本文报导共价链相连的X-P-Y“三合板”型化合物在二甲基甲酰胺(DMF)和苯溶液中的发光特性.结果发现:引入取代基X=Cl—,CH3O—和Y=苯、硝基苯对中心卟啉的吸收和荧光光谱均无明显影响,仅其峰值频率将因溶剂不同而有所偏移.此外,由Cl—取代的卟啉—苯的荧光强度总比CH3O—取代时高;若将Y取代基由苯改换为硝基苯时,将使CH3O—P—Y化合物的荧光增强,但在Cl—P—Y化合物中则出现相反的趋势.不论在何种化合物中,在Y取代基中的苯环上引入NO2—基后,均可使其消光系数减小,而且当硝基在邻位取代时,这一效应更为显著.所有这些变化规律均不因溶剂不同而异.如果我们认为X—P—Y化合物的发光强度变化和其中心的卟啉大环上的π电子云密度偏移有规律性的关联,那么上述的一些取代基效应是可以理解的.进而,我们认为:本文所报导的事实将有助于充实巧妙设计高效利用太阳能的分子体系的科学依据.