铁掺杂PMP泡沫制备工艺研究

 以聚-4-甲基-1-戊烯为泡沫骨架，二茂铁为掺杂材料，通过热诱导倒相技术制备出铁掺杂聚合物泡沫。掺杂泡沫的实际密度均高于理论密度，且沿轴向从上至下逐渐增大。在理论密度不变的情况下，掺杂泡沫实际密度随掺杂元素原子百分含量的升高而呈降低趋势。与PMP泡沫相比，掺杂泡沫的孔洞直径分布变宽且网络骨架尺寸有变大的趋势。     

Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature

In order to investigate of cobalt-doped interracial polyvinyl alcohol （PVA） layer and interface trap （Dit） effects, A1/p- Si Schottky barrier diodes （SBDs） are fabricated, and their electrical and dielectric properties are investigated at room temperature. The forward and reverse admittance measurements are carded out in the frequency and voltage ranges of 30 kHz-300 kHz and -5 V-6 V, respectively. C-V or er-V plots exhibit two distinct peaks corresponding to inversion and accumulation regions. The first peak is attributed to the existence of Dit, the other to the series resistance （Rs）, and interfacial layer. Both the real and imaginary parts of dielectric constant （er and err） and electric modulus （Mr and Mrr）, loss tangent （tan~）, and AC electrical conductivity （aac） are investigated, each as a function of frequency and applied bias voltage. Each of the M~ versus V and Mrr versus V plots shows a peak and the magnitude of peak increases with the increasing of frequency. Especially due to the Dit and interfacial PVA layer, both capacitance （C） and conductance （G/w） values are strongly affected, which consequently contributes to deviation from both the electrical and dielectric properties of A1/Co-doped PVA/p-Si （MPS） type SBD. In addition, the voltage-dependent profile of Dit is obtained from the low-high frequency capacitance （CLF-CHF） method.     

Synthesis and Characterization of Titanium-doped Ordered Mesoporous Alumina

Titanium-doped ordered mesoporous alumina with specific structural properties has been prepared by the evaporation induced self-assembly sol-gel method. The results show that the doped titanium helps to stabilize the ordered mesoporous alumina material without influencing the ordered mesoporosity. The textural properties of the obtained sample are related to the amount of doped titanium. When the molar ratio of aluminum to titanium(n(Al)/n(Ti)) is controlled as 10.2, the titanium-doped ordered mesoporous alumina exhibits high surface area(up to 218 m2 g-1), large pore volume(0.42 cm3 g-1) and narrow pore diameter(6.1 nm) after treating at 900 ℃, showing high thermal stability. Moreover, the obtained sample calcined at 900 ℃ still maintains ordered mesoporous structure and exhibits high thermal stability.     

Cu∶CdS纳米晶的绿色合成、结构及光谱性质研究

本文利用一种绿色合成工艺,采用巯基乙酸作为配体,在水溶液中成功合成了水溶性的Cu∶CdS纳米晶。利用X射线衍射分析(XRD)、傅里叶变换红外光谱(FT-IR)、场发射扫描电镜显微分析(FE-SEM)、能量色散X射线谱(EDX)、紫外可见(UV-Vis)吸收光谱对样品的晶体学性质、结构、形貌、成分、吸收光谱性质进行了系统的研究。着重研究了掺杂浓度对Cu∶CdS纳米晶的晶体学性质及吸收光谱的影响。结果表明:合成的Cu∶CdS纳米晶为立方相,通过谢乐公式估算的平均晶粒尺寸约为2 nm;随着掺杂浓度的增加,产物的晶胞参数也逐渐增大,表明Cu离子已经掺入到CdS纳米晶中,该发现与EDX结果相吻合。FT-IR红外光谱发现,配体巯基乙酸成功包覆在纳米晶的表面。UV-vis吸收谱表明,掺杂后的Cu∶CdS纳米晶的吸收峰向长波长方向移动。这种红移主要是Cu离子在CdS纳米晶中的掺杂而形成电子能级跃迁所致。     

第一性原理计算N掺杂对InNbO4电子结构的影响

宽带隙（3.83 eV）半导体光催化材料InNbO4在紫外光作用下具有分解水和降解有机物的性能。最近实验发现了N掺杂InNbO4具有可见光下分解水制氢的活性。为了从理论上解释这一实验现象，本文采用基于密度泛函理论的第一性原理计算了N掺杂对InNbO4的能带结构、态密度和光学性质的影响。分析能带结构可得，N掺杂后在InNbO4的价带（O 2p）上方形成N 2p局域能级，导致电子跃迁所需的能量减小。吸收光谱表明，N掺杂后InNbO4的光吸收边出现了红移，实现了可见光吸收。     

An optical study of the D-D neutron irradiation-induced defects in Co-and Cu-doped ZnO wafers

Room-temperature photoluminescence and optical transmittance spectroscopy of Co-doped(1×1014,5×1016,and 1×1017cm-2) and Cu-doped(5×1016cm-2) ZnO wafers irradiated by D-D neutrons(fluence of 2.9×1010 cm-2) have been investigated.After irradiation,the Co or Cu metal and oxide clusters in doped ZnO wafers are dissolved,and the wu¨rtzite structure of ZnO substrate for each sample remains unchanged and keeps in high c-axis preferential orientation.The degree of irradiation-induced crystal disorder reflected from the absorption band tail parameter(E0) is far greater for doped ZnO than the undoped one.Under the same doping concentration,the Cu-doped ZnO wafer has much higher irradiation-induced disorder than the Co-doped one.Photoluminescence measurements indicate that the introduction rate of both the zinc vacancy and the zinc interstitial is much higher for the doped ZnO wafer with a high doping level than the undoped one.In addition,both crystal lattice distortion and defect complexes are suggested to be formed in doped ZnO wafers.Consequently,the Co-or Cu-doped ZnO wafer(especially with a high doping level) exhibits very low radiation hardness compared with the undoped one,and the Cu-doped ZnO wafer is much less radiation-hard than the Co-doped one.     

PQ/PMMA光致聚合物的偏光全息特性研究

对于体全息来说,存储材料的体积与所能存储的信息容量有关。采用热致聚合方法制备了厚度分别为0.5mm、1.0mm、1.5mm、2.0mm的菲醌掺杂的聚甲基丙烯酸甲酯(PQ/PMMA)光致聚合物材料。探测并分析了材料样品对不同波长的光吸收特性以及不同厚度材料的全息性能。实验结果表明,厚度的变化对材料的光致双折射值影响较小,而对衍射效率的影响较大。     

Spin Polarization Properties of Na Doped Meridianal Tris（8-Hydroxyquinoline） Aluminum Studied by First Principles Calculations

We theoretically investigate the electronic structure and spin polarization properties of Na-doped meridianal tris（S-hydroxyquinoline） aluminum （Alq3） by first principles calculations. It is found that the spin density is distributed mainly in the Alq3 part in the Alq3：Na complex. Electron charge transfer takes place from the Na atom to the Alq3 molecule, which induces asymmetric changing of the molecule bond lengths, thus the spin density distribution becomes asymmetric. Spin polarization of the complex originates from the preferable filling of the spin-split nitrogen and carbon p-orbitals because of the different bond length changes of the Aiq3 molecule upon Na doping.     

水热法制备S、N共掺杂碳点及其银离子的荧光检测

以通过氢键形成分子单元的异硫氰酸胍为掺杂剂,采用一锅水热法制备了具有明亮蓝色荧光的S、N共掺杂碳点.结构表征显示,N和S元素能够通过杂环原子和碳点表面官能团的形式充分掺杂.该碳点溶液的光致发光最佳激发波长为395nm,对应发射谱从"激发独立"变为"激发依赖".在碳点的形成过程中,出现了一些分子级荧光团,随着碳化过程以表面官能团的形式键合在碳点的表面,这为该碳点作为银离子检测的传感探针提供了可能.碳点溶液荧光强度和银离子浓度在不同浓度范围内成线性关系,基团-S-C≡N能够促进银离子对碳点溶液荧光的猝灭效应.该碳点溶液制备方法简单、性能优异,为高效检测工业污染物中银离子的应用提供了一种可能的途径.