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131.
硒镓银单晶体的生长及其应用   总被引:10,自引:3,他引:7  
  相似文献   
132.
Supercontinuum Generation in a Photonic Crystal Fibre   总被引:4,自引:0,他引:4       下载免费PDF全文
Nearly 1000-nm broad continuum from 390 nm to 1370 nm is generated in a 2-m long photonic crystal fibre. The maximum total power of supercontinuum is measured to be 60mW with the pumping power of 800mW output from a 200-fs Ti:sapphire laser. The evolution of the pumping light into supercontinuum is experimentally studied in detail. It is found that the mechanism for supercontinuum generation has direct relations with Raman effect and soliton effect, and the four-wave mixing plays an important role in the last phase of the supercontinuum generation.  相似文献   
133.
134.
方林瑞 《物理实验》1998,18(4):20-22
介绍在晶体弹光效应中,运用折射率椭球的运算,清楚表明同一块晶体在不同外力作用下,可以具有不同波长片的功能.  相似文献   
135.
非谐振腔型KTP光参变振荡器   总被引:1,自引:0,他引:1  
姚宝权  王月珠  王骐 《光学学报》2002,22(8):67-971
研究了双晶体走离补偿、非谐振腔型KTP光参变振荡器,利用一套膜片实现了KTP相位匹配所允许的全波段调谐,信号光调谐范围0.698μm-1.026μm,闲频光调谐范围1.105μm-2.237μm。5倍阈值处,信号光840nm最高输出能量53mJ,能量转换效率25.8%,量子转换效率40%,闲频光的量子郊率也达到32%。  相似文献   
136.
张兴武  刘凯欣 《中国物理快报》2003,20(11):2036-2038
The solutions for a mode Ⅲ crack growing along an arbitrary propagation path in a piezoelectric plane are studied under the impermeable surface condition and the electrical contact surface condition respectively. According to the two kinds of electric boundary conditions, the Hilbert and Riemann boundary value problems in a half-plane including opening smooth arc are obtained from the theoretical analysis. Moreover, the equipollence of the solution formed under these two electric boundaries is proved, and unified solutions for the stress and electric displacement distribution in the crack-tipfield of the piezoelectric plane are achieved.  相似文献   
137.
A fully vectorial effective index method is developed for accurate dispersion calculation of photonic crystal fibres (PCFs). In order to improve the accuracy of the model, different values for the effective core radius are used when PCFs have different fibre parameters. The accuracy of our approach is demonstrated by comparing our results with other numerical and experimental results reported in literature. It is found that the accuracy of the fully vectorial effective index method is improved and our results agree well with accurate numerical results obtained by other methods as well as the previously reported experimental data.  相似文献   
138.
分析了Z箍缩等离子体的辐射特性;介绍了用平面晶体作为分光元件的X射线晶体谱仪的原理、结构参数设计及性能分析;对晶体谱仪测量X射线辐射谱的初步实验进行分析,给出预估的实验结果。  相似文献   
139.
The electric and magnetic energy distributions in photonic crystals (PC) are calculated by using the plane wave expansion (PWE) method. Even though the total electric and magnetic energy in each unit cell of photonic crystals are equal to each other, the ratio of electric and magnetic energy densities varies depending on the local position. Based on Fermi's golden rule, the optical gain is analysed in the full quantum framework that takes the nonuniform energy density ratio into account. This nonuniform energy density ratio in photonic crystals, defined in an equal form as gain modification factor, leads to spatially inhomogeneous modification of optical gain. Results reported in the paper provide a new perspective for analysing gain characteristics, as well as the lasing properties, in photonic crystals.  相似文献   
140.
An edge emitting laser based on two-dimensional photonic crystal slabs is proposed. The device consists of a square lattice microcavity, which is composed of two structures with the same period but different radius of air-holes, and a waveguide. In the cavity, laser resonance in the inner structure benefits from not only the anomalous dispersion characteristic of the first band-edge at the M point in the first Brillouin-zone but also zero photon states in the outer structure. A line defect waveguide is introduced in the outer structure for extracting photons from the inner cavity. Three-dimensional finite-difference time-domain simulations apparently show the in-plane laser output from the waveguide. The microcavity has an effective mode volume of about 3.2(λ/nslab)^3 for oscillation mode and the quality factor of the device including line defect waveguide is estimated to be as high as 1300.  相似文献   
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