单系统齐次和非齐次微分方程解的有界性

本首先研究了单系统齐次微分方程系数矩阵与解的关系；并给出了解的有界性与特征函数之间的一般关系，最后讨论了非齐次线性方程解的有界性。     

一类非经典扩散方程整体解的存在唯一性及长时间行为

本文讨论非经典扩散方程第一初边值问题整体解的存在唯一性及长时间行为，建立了一系列新的结果，较好地改进许多已有的结论．     

高维广义神经传播方程Cauchy问题整体光滑解

其中c_1、c_2为非负常数。近些年来,国内外许多学者对这类方程进行了深刻的研究.M.E.Schonbek研究了神经脉冲传播中的Fitzhugh-Nagumo方程组初边值问题整体经典解存在性,郑宋穆、沈玮熙进一步改进了[3]的结论。C.V.Pao研究了     

扰动周期KdV方程的小波基分析

本文利用样条小波基构造近似惯性流形来研究扰动周期ＫｄＶ方程的长期动力学行为·     

Bifurcation and Isochronicity at Infinity in a Class of Cubic Polynomial Vector Fields

In this paper, we study the appearance of limit cycles from the equator and isochronicity of infinity in polynomial vector fields with no singular points at infinity. We give a recursive formula to compute the singular point quantities of a class of cubic polynomial systems, which is used to calculate the first seven singular point quantities. Further, we prove that such a cubic vector field can have maximal seven limit cycles in the neighborhood of infinity. We actually and construct a system that has seven limit cycles. The positions of these limit cycles can be given exactly without constructing the Poincare cycle fields. The technique employed in this work is essentially different from the previously widely used ones. Finally, the isochronous center conditions at infinity are given.     

ON DIRECT METHOD OF SOLUTION FOR A CLASS OF SINGULAR INTEGRAL EQUATIONS

In this article, by introducing characteristic singular integral operator and associate singular integral equations (SIEs), the authors discuss the direct method of solution for a class of singular integral equations with certain analytic inputs. They obtain both the conditions of solvability and the solutions in closed form. It is noteworthy that the method is different from the classical one that is due to Lu.     

金属上化学吸附的族模型量子化学研究

簇模型方法是研究化学吸附的最重要的量子化学方法之一。本文对＇簇－－表面类比法＇的物理内涵、研究现状、以及发展趋势作了简要的评述。     

正负系数中立型差分方程的正解的存在性

In this paper the sufficient conditions for the existence of positive solutions of the neutral difference equations with positive and negative coefficients are established. The results improve some known conclusions in the literature     

c轴定向氮化铝薄膜的制备

利用电子回旋共振 (ECR)微波增强化学气相沉积法 (PECVD)并使用氮气 (N2 ) ,氩气 (Ar)和AlCl3蒸气作为气源在直径为 6 .35cm的 (10 0 )单晶硅片表面制备了c轴定向氮化铝 (AlN)薄膜 ,并使用X射线衍射仪及其X射线特征能谱和扫描电镜 (SEM)分析了薄膜特征 ,研究了微波功率、基板温度和N2 流量对薄膜c轴定向的影响 ,得到了c轴偏差角小于 5°的高质量大面积AlN薄膜。