PbTiO3/SrTiO3(010)异质界面上的周期性失配位错及电子富集

It is important to determine the effects of misfit dislocations and other defects on the domain structure, ferroelectricity, conductivity, and other physical properties of ferroelectric thin films to understand their ferroelectric and piezoelectric behaviors. Much attention has been given to ferroelectric PbTiO₃/SrTiO₃ or PbZr_0.2Ti_0.8O₃/SrTiO₃ heterointerfaces, at which improper ferroelectricity, a spin-polarized two-dimensional electron gas, and other physical phenomena have been found. However, those heterointerfaces were all (001) planes, and there has been no experimental studies on the growth of (010) PbTiO₃/SrTiO₃ heterointerface due to the 6.4% misfit between two materials. In this study, we selected an atomically flat (010) PbTiO₃/SrTiO₃ heterointerface grown using a two-step hydrothermal method as the research subject, and this is the first experimental report on that interface. Interfacial dislocations can play a significant role in causing dramatic changes in the Curie temperature and polarization distribution near the dislocation cores, especially when the size of a ferroelectric thin film is scaled down to the nanoscale. The results of previous studies on the effects of interfacial dislocations on the physical properties of ferroelectric thin films have been contradictory. Thus, this issue needs to be explored more deeply in the future. This study used aberration corrected scanning transmission electron microscopy (STEM) to study the atomic structure of a (010) PbTiO₃/SrTiO₃ heterointerface and found periodic misfit dislocations with a Burgers vector of a[001]. The extra planes at the dislocation cores could relieve the misfit strain between the two materials in the [001] direction and thus allowed the growth of such an atomically sharp heterointerface. Moreover, monochromated electron energy-loss spectroscopy with an atomic scale spatial resolution and high energy resolution was used to explore the charge distribution near the periodic misfit dislocation cores. The fine structure of the Ti L edge was quantitatively analyzed by linearly fitting the experimental spectra recorded at various locations near and at the misfit dislocation cores with the Ti³⁺ and Ti⁴⁺ reference spectra. Therefore, the accurate valence change of Ti could be determined, which corresponded to the charge distribution. The probable existence of an aggregation of electrons was found near the a[001] dislocation cores, and the density of the electrons calculated from the valence change was 0.26 electrons per unit cell. Based on an analysis of the fine structure of the oxygen K edge, it could be argued that the electrons aggregating at the dislocation cores came from the oxygen vacancies in the interior regions of the PbTiO₃. This aggregation of electrons will probably increase the electron conductivity along the dislocation line. The physics of two-dimensional charge distributions at oxide interfaces have been intensively studied, however, little attention had been given to the one-dimensional charge distribution. Therefore, the results of this study can stimulate research interest in exploring the influence of the interfacial dislocations on the physics of ferroelectric heterointerfaces.     

肽基超分子胶体

肽基超分子胶体是基于肽分子间超分子作用,自发形成且具有有序分子排布及规整结构,兼具传统胶体及超分子特性的组装体系。利用超分子弱相互作用构筑功能性胶体,不仅是人们对生命组装进程深入理解的有效手段,也是实现优异的超分子材料的重要途径。肽分子具有组成明确、性能可调、生物安全性高及可降解等优势,是超分子化学、胶体与界面化学领域重要的组装基元。基于肽的超分子自组装,能够实现多尺度、多功能的生物胶体的构筑,被广泛应用于医药、催化、能源等领域。如何通过对肽序列的设计及分子间作用力的调控,实现对胶体结构和功能的精确控制,是近年来研究的重要课题之一。从分子尺度研究和揭示超分子胶体的组装过程及物理化学机制,探究胶体结构与功能的关系,是实现超分子结构和功能化的重要内容。本文基于"分子间作用的调控"及"结构与功能的关系"两个基本科学问题,系统地综述了肽基超分子胶体的组装机制、结构与功能,以及研究现状。     

单分子电导测量技术及其影响因素

Molecular electronics is an important field for the application of nanotechnologies with an ultimate goal of building functional devices using single molecules or molecular arrays to realize the same functionality as macroscopic devices. To attain this goal, reliable techniques for measuring and manipulating electron transfer processes through single molecules are essential. There are various techniques and many environmental factors influencing single-molecule electronic conductance measurements. In this review, we first provide a detailed introduction and classification of the current well-accepted techniques in this field for measuring single-molecule conductance. All available techniques are summarized into two categories: the fixed junction technique and break junction technique. The break junction technique involves repeatedly forming and breaking molecular junctions by mechanically controlling a pair of electrodes moving into and out of contact in the presence of target molecules. Single-molecule conductance can be determined from the conductance plateaus that appear in typical conductance decay traces when molecules bind two electrodes during their separation process. In contrast, the fixed junction technique is to fix the distance between a pair of electrodes and measure the conductance fluctuations when a single molecule binds the two electrodes stochastically. Both techniques comprise different application methods and have been employed preferentially by different groups. Specific features of both techniques and their intrinsic advantages are compared and summarized in Section 4.     

基于S-型光催化机制CuInS2内嵌中空凹面氮化碳光催化分解H2O制H2（英文）

光催化解离H2O合成H2是绿色可再生的太阳能光子能量转换策略之一.目前,增强光催化材料对太阳能光子的捕获并将之有效利用仍然是一个具有挑战性的课题.光催化解离H2O反应包括三个过程:太阳能光子能量促使光生电子在半导体材料带隙中的跃迁;光生电子定向传输;光生电子与吸附在半导体材料表面的H2O分子发生反应.第一过程需要强的太阳光子捕获能力以产生足够的光生载流子;第二、三过程在动力学上反映了光生载流子在各个竞争过程中能否有效利用的问题,如光生电子迁移与H2O作用的速度很慢(~μs),而电子与空穴的复合速度快(~ps).目前研究者很难协调半导体材料的电学和光学特性以满足光生载流子在热力学和动力学两方面的要求.g-C3N4是由C、N原子通过sp2杂化组成的二维π共轭体系.当g-C3N4结构偏离二维平面时,共轭体系的π电子由凹面迁移到凸面,促使凹、凸面形成表观电势差,有利于电子的定向传输.本文通过卷曲sp2杂化离域均三嗪体系偏离二维平面,得到空心凹面g-C3N4结构,便捷地优化了半导体的电子结构.将CuInS2嵌入生长于空心g-C3N4的凹面,所构成的半导体光催化材料CuInS2@C3N4展现了增强的光捕获能力,以及电子定向传输转移能力.结合XPS、光电流测试、电化学阻抗谱、稳态及瞬态荧光等表征手段揭示空心g-C3N4凹、凸面表观电势差驱动光生电子以S-型光催化作用机制从CuInS2的Cu 2p向g-C3N4的N 1s的路径转移.因而,所构建的CuInS2@C3N4在可见光激发下产氢效率提高到373μmol·h^?1·g^?1,其产氢效率分别是二维平面g-C3N4负载1 wt%Pt和3 wt%Pd效率的1.57倍和1.35倍,表明空心g-C3N4凹、凸面电势差可以显著地促进光生电子分离和利用率,从而提高光催化解离水制氢效率.本文可增强g-C3N4的可持续太阳能转换性能,也适用于其他半导体材料以替代贵金属光催化体系,降低光催化产氢技术成本,促进光催化技术的应用.     

基于金纳米粒子及石墨烯量子点的四环素分子印迹电化学传感器研究

该文以四环素为模板分子,4-氨基苯硫酚(4-ATP)为功能单体,采用循环伏安法在金纳米粒子和石墨烯量子点复合材料修饰的玻碳电极表面电聚合分子印迹膜,制备四环素(TC)分子印迹传感器(MIPs/GQDs-AuNPs/GCE),并通过循环伏安法(CV)、电化学交流阻抗法(EIS)和线性扫描伏安法(LSV)等研究了其电化学响应性能。结果表明,该传感器对四环素具有良好的电流响应。在最佳实验条件下,TC氧化峰电流值与其浓度在2.0×10^-8～3.0×10^-5 mol/L范围内呈良好的线性关系,相关系数为0.999 4,检出限为1.5×10^-9 mol/L,加标回收率为97.9%～106%。该传感器稳定性好、响应灵敏、选择性高,具有良好的应用前景。     

氟喹诺酮-3-N-酰胺类衍生物的合成与抗肿瘤活性

为扩展氟喹诺酮由抗菌活性向抗肿瘤活性转化的结构修饰策略,利用药效团生物电子等排及其拼合和骨架迁越药物化学分子构建方法,以酰胺基作为氟喹诺酮C-3位羧基的生物电子等排体,氟喹诺酮骨架为酰胺基的功能修饰基,设计合成了氟喹诺酮-3-N-酰胺类目标化合物。其结构经元素分析和光谱数据确证。体外抗肿瘤实验结果表明,目标化合物对Hep-3B细胞和Capan-1细胞的抗增殖活性均显著强于母体环丙沙星的活性,尤其对Hep-3B细胞的抑制活性最强。因此,用酰胺基来替代C-3羧基有利于提高氟喹诺酮的抗肿瘤活性。     

新型的香豆素染料/碘( )盐光敏引发系统的研究

在实际应用中,大部分光敏引发系统只对紫外光敏感.近年来,随着Ar+(488nm)、YAG(532nm)以及He-Ne(633nm)激光技术的不断发展,高效的长波长光敏引发体系成为研究的重点.其中之一的方法是使引发剂直接感可见光,然而取得的结果并不显著.所以染料敏化又一次成为焦点.其中最重要的技术是使光敏引发系统的吸收波长移向长波长,并且具有高的灵敏度.     

N-(3-苯基-2,3,4-三唑甲酰氨基)-N＇-芳酰基硫脲及其环化产物的合成

以PEG-400为相转移催化剂,通过2-苯基-1,2,3-三唑-4-甲酰基肼与芳酰基异硫氰酸酯的加成反应,合成了系列新的酰胺基硫脲衍生物(3),3分别在酸性和碱性条件下环化制得相应的1,3,4-噻二唑衍生物和1,2,4-三唑啉-5-硫酮衍生物,并经元素分析、IR,1H NMR和MS确证结构.     

温控相转移催化——水/有机两相催化新进展

综述了“温控相转移催化”的原理,温控膦配体的设计、合成及其在水溶性极小的底物高碳烯烃的水/有机两相氢甲酰化反应中的应用效果.     

SO2基态势能面和振转能级的理论研究

在键长-键角坐标下,精确求解SO₂的核振动方程,并通过与实验数据比较来优化势能参数,由所得势能面计算得到38个振动能级,与实验值相比,均方根误差为0.93cm^-1.计算了³⁴SO₂的部分振动能级以及³²SO₂的J=6以下的部分振动能级,所得结果均与实验值较为吻合