Orthosymplectic Quantum Function Superalgebras OSPq（2l＋ 1｜2n）

By the R-matrix of orthosymplectic quantum superalgebra U _q (osp(2l+1|2n)) in the vector representation, we establish the corresponding quantum Hopf superalgebra OSP _q (2l + 1|2n). Furthermore, it is shown that OSP _q (2l + 1|2n) is coquasitriangular.     

Photoluminescence characteristics of GaN：Si

Both the electrical and optical properties are studied of the GaN：Si films with carrier concentrations ranging from 10^17cm^-3 to 10^19cm^-3.rhe results indicate that the increase in slope of carrier concentration starts to slow down when the flow rate of SiH4 is larger than 6.38μmol/min, which is attributed to the amphoteric character of Si. At the same time, the photoluminescence results show that the FWHM of UV is widened,which can be interpreted quantitatively with a semi-classic model. Furthermore, the intensity ratio between the yellow and the UV luminescences reduces monotonically with Si dopants increasing.     

不同稀土离子对YAGG：Tb发光性能的影响研究

对不同三阶稀土共振杂的ＹＡＧＧ：Ｔｂ绿色荧光粉的发光亮度和光谱进行了研究，发现Ｇｄ＾３＋对荧光粉的亮度有所提高，同时系统地研究了Ｔｂ，Ｇｄ含量等对基的影响。     

变色的ZnS：Mn/SrS：Ce/ZnS：Mn薄膜电致发光的研究

利用ZnS:Mn/SrS:Ce/ZnS:Mn多层结构,得到了一种可变颜色的薄膜电致发光器件。研究了这一器件的发射光谱随电压和频率的变化,并讨论了随电压的增加,发射光谱中蓝带和黄带的不同增长的原因,以及在不同电压下,发射光谱中蓝带和黄带随频率变化的不同趋势的原因。观察到随驱动频率的增加,发射光谱出现黄-蓝色位移。     

纳米ZnS:Mn2+薄膜荧光增强动力学研究

利用有机溶胶方法制备了纳米ZnS:Mn^2 颗粒并将其分散在PVB薄膜中，观察到紫外辐照荧光增强的现象且增长倍数高于以前的报道。利用激发和发射光谱等手段对荧光增强的动力学过程进行了研究。认为纳米ZnS中元激发向Mn^2 离子和表面态的能量传递是两个互相竞争的过程，紫外光辐照使表面态数目减少从而使Mn^2 的发光增强，辐照后ZnS基质的1P能级对Mn的激发更为有效。该样品在太阳光辐照下有相同的增强效应，可用来作为紫外光辐照剂量的探测材料。     

Microscopic Theoretical Calculations of R—Line Thermal Shifts and Broadenings of MgO：Cr^3＋

By taking into account all the irreducible representations and their components in the electron-phonon interaction (EPI) as well as all the levels and the admixtures of basic wavefunctions within d^3 electronic configuration,the values of all the parameters in the expressions of thermal shift (TS) and thermal broadening (TB) due to EPI for the ground level,R level and R line of MgO:Cr^3 have microscopically been evaluated;and then,TS and TB of R line and various contributions to them have uniformly been calculated.The results are in very good agreement with the experimental data.It is found that all the three terms of TS due to EPI are red shifts;the Raman term is the largest one,and the optical-branch term and neighbor-level term are important for TS;the contribution to TS from thermal expansion is blue shift,which is also important.The R-line TS of MgO:Cr^3 comes from the first-order term of EPI.The elastic Raman scattering of acoustic phonons plays a dominant role in R-line TB of MgO:Cr^3 .For both TS and TB,it is very important to take into account all the admixtures of basic wavefunctions within d^3 electronic configuration.     

硅表面化学镀银晶籽层生长过程的研究

室温下在HF+AgNO₃溶液中于硅表面制备了银晶籽层。利用开路电位时间曲线（OCP-t）、阳极溶出伏安法（ASV）以及扫描隧道显微镜（STM）等方法研究了硅表面银晶籽层的形成过程，解释了银晶核长大的过程。提出了银晶籽在硅表面的生长机理是：首先是在硅表面没有被完全覆盖的情况下，单层银晶籽生长的同时伴随有多层的生长，此后单层逐渐形成连续的薄膜，在单层晶籽层上多层薄膜逐渐增厚，并伴随有部分银原子向硅中的扩散。     

高光学质量,高平均功率非稳腔Nd：YAG激光器

在分析含热透镜的非稳腔固体激光器普遍特性的基础上，分别定义了几何放大率和输出曲率半径的热敏感度，结合腔镜失调敏感度而成为设计该类谐振腔的重要依据，据此，进一步改善和发展的新型的棒成像非稳腔。     

磁回转演示实验

简述了磁回转现象的原理以及在共振条件下磁回转效应振幅的大小．在此基础上简单介绍了磁回转演示仪的研制和相应的固有频率的计算，实验结果表明实验值与理论值基本一致。