新型含氧亚甲基和亚胺桥键液晶化合物分子结构与光谱的密度泛函理论研究

采用密度泛函理论方法在B3LYP/6-31G*水平上对6个新型含氧亚甲基和亚胺桥键液晶化合物分子的几何结构进行优化计算,讨论了取代基H,CH3,CH3O,C2H5O,NO2,Cl对分子电荷、前线轨道能量和电子吸收光谱等性质的影响.在此基础上使用含时密度泛函理论方法计算了分子第一激发态的电子垂直跃迁能,得到最大吸收波长λmax.计算表明,取代基的引入导致最大吸收波长红移.     

Nd(Fe,Si)11Cx化合物的全电子计算(x=0,2)

采用基于第一原理的全势能线性缀加平面波加局域轨道((L)APW lo)方法对Nd(Fe,Si)11Cx化合物(x=0,2)的电子结构进行了计算,得到了化合物态密度和磁矩等信息.计算结果表明NdFe9Si2化合物中Si原子主要与4b和32i位Fe原子产生杂化,导致Fe原子磁矩减小.NdFe9Si2C2化合物C原子使32i位Fe原子磁矩进一步降低,同时减弱了Si原子的影响,使得4b位Fe原子磁矩增大.     

Tight—binding calculation of the electronic states of bulk—terminated GaAs（311）A and B surfaces

We have carried out theoretical investigations on the electronic structure of GaAs(311)A and GaAs(311)B surfaces. The bulk electronic structure of GaAs has been described by the second-neighbour tight-binding formalism and the surface electronic structure was evaluated via an analytic Green function method. First, we present the surface band structure together with the projected bulk band of both Ga-terminated and As-terminated for GaAs(311)A and GaAs(311)B surfaces, respectively. In each case, the number of surface states is determined, and the localized surface features and orbital properties of these surface states along Γ-Y-S-X-Γ high symmetry lines of the surface Brillouin zone are discussed. For the Ga-terminated GaAs(311)A (1×1) surface, we have tested two possible structure models, i.e. "the bridge site" and "the hollow site" models. In comparison with the angle-resolved photoelectron spectroscopy studied recently, the results have shown that the surface electronic states of the hollow site model are in good agreement with the experiments, whereas those of the bridge site model are not. So we have concluded that the hollow site model is favourable for the Ga-terminated GaAs(311) (1×1) surface and the bridge site model should be excluded.     

Magnetic properties of TbMn6Sn6-xGax (x=0.0－1.2) compounds

Effects of Ga substitution for Sn on the structure and magnetic properties of TbMn₆Sn_6-xGa_x (x=0.0－1.2) compounds have been investigated by means of x-ray diffraction, magnetization measurement and ¹¹⁹Sn M?ssbauer spectroscopy. The substitution of Ga for Sn results in a decrease in lattice constants and unit-cell volumes. The magnetic ordering temperature decreases monotonically with increasing Ga content from 423 K for x=0.0 to 390 K for x=1.2. At room temperature, the easy magnetization direction changes from the c-axis to the ab-plane. This variation implies that the substitution of Ga for Sn leads to a decrease in the c-axis anisotropy of the Tb sublattice. An increase in the non-magnetic Ga concentration results in a monotonic decrease of the spontaneous magnetization M_s at room temperature. Since there are three non-equivalent Sn sites, 2c (0.33, 0.67,0), 2d (0.33, 0.67,0.5) and 2e (0,0,0.34) in the TbMn₆Sn_6-xGa_x compounds, the ¹¹⁹Sn M?ssbauer spectra of the TbMn₆Sn₆ and TbMn₆Sn_5.4Ga_0.6 compounds can be fitted by three sextets. The hyperfine fields (HFs) decrease in the order of HF(2d)>HF(2e)>HF(2c), which is in agreement with the magnetic structure.     

Magnetic Properties and Magnetoresistance Effect of YMn6 Sn6—x Crx （x=0—0.8） Compounds

The magnetic properties and magnetoresistance effect of YMn6Sn6-x Crx(x=0-0.8) compounds have been experimentally studied by magnetic properties and resistivity measurements in the applied field range 0-5T.The compound (x=0.8) displays a ferromagnetic behaviour,while the compounds (x=0-0.4) display an antiferromagnetic behaviour in the whole ordering temperature range.The compounds(x=0.5,0.6) experienced a transition from an antiferromagnetic state to a ferromagnetic state with increasing temperature.The compound with x=0.8 is rapidly saturated in the lower magnetic field with saturation magnetization of 35.92emu/g.The compounds(x=0-0.6) display a field-induced metamagnetic transition,and the threshold fields decrease with increasing Cr content.The cell-volume V of compounds(x=0-0.8) increases,and the ordering temperature decreases with the increasing Cr content.A large magnetoresistance effect was observed for the compounds (x=0.4,0.5),and the maximum absolute value at 5K are 32% and 24% under 5T for x=0.4 and x=0.5,respectively.     

高灵敏度化学光谱法测定金、铂和钯

三正辛胺负载泡塑对贵金属有极强的吸附能力。本文通过对三正辛胺负载泡塑对金、铂、钯吸附性能的研究，以及NO3^-和Fe^3 离子干扰的消除，拟定了金、铂、钯的快速、简便、富集系数高的三正辛胺负载泡塑分离法，一次摄谱的测定范围（10g样品）为：Au0.1-5000ng/g；Pt0.2-5000ng/g；Pd0.1-1000ng/g。     

镧与真空沉积银纳米粒子的金属间化合

根据HumeRothery规则,分析了银与镧两元素之间形成金属间化合物的倾向性,并根据真空蒸发沉积的条件,分析了在真空蒸发沉积情况下镧与银之间形成金属间化合物的可能性.用X射线光电子能谱化学位移方法对真空蒸发沉积的银、镧薄膜进行了分析,结果表明在真空沉积条件下镧与银之间的确形成了金属间化合物. 关键词： 金属间化合物 镧 银 纳米粒子     

从NMR参数计算天然化合物分子在溶液中三维结构——核磁共振分子图形软件包(NMRMG)简介

药物、天然化合物的药效、生理活性与它在溶液状态的分子构型、构象紧密相关.核磁共振方法是研究分子在溶液中的构型、构象的有力工具.将核磁共振与计算机相结合得到分子结构图形及一系列精细结构数据,为研究天然药物、有机化合物的构效关系提供了可靠方法.     

某些查耳酮化合物的发光

本文叙述了两个同质查耳酮系列的合成.一个带有查耳酮中心链(系列Ⅰ),另一个是系列Ⅰ的酯类(系列Ⅱ).研究了每个系列中三种化合物的发光,发现两个系列的所有化合物都能见到发光.系列Ⅰ中的化合物在峰值为360nm处可见到发光,而系Ⅱ列中的化合物未能观测到这一波长的发光.然而,在峰值为470nm处两者均可见到发光.得出的结论是,消除非键电子微扰作用的氢键是系列Ⅰ中的化合物在360nm处出现发光的原因.     

Tb1-xGdxFe2的磁矩和矫顽力

测量了赝二元立方Laves相化合物TbGdFe₂(0≤x≤1)的磁化曲线、居里温度和矫顽力随温度的变化。发现化合物由TbFe₂向GdFe₂过渡时,样品的饱和磁化强度几乎直线下降。在所有成分下,Fe原子的磁矩都是常数(μ_Fe=1.60±0.04μ_B),但Tb原子的磁矩,由于受晶场影响,却小于自由离子的值(gJ=9.Oμ_B)。矫顽力由两部分组成:一为畴壁受Peierls势垒和稀土 关键词：