关于群胚作用和李双代数胚态射

在这篇文章中，我们讨论了李双代数胚之间的态射，得到了一些李双代数胚之间态射的性质．研究了泊松群胚在泊松流形上的泊松作用，以及这个泊松作用与被作用流形的切李双代数胚到作用泊松群胚的切李双代数胚之间的态射的关系，得到了一些有用的结论。     

6p2阶的三度半对称图

正则图G 称为G-半对称图, 如果G 的自同构群A := AutG 有一个子群G在G 的边集上传递, 但在其点集上不传递, 特别地, 当G= A时Γ 称为半对称图. 本文旨在考察素数度的(G-)半对称图. 首先给出了素度数的(G-)半对称图的群论刻画, 其次对6p²阶的三度半对称图进行了完全分类, 其中p是奇素数.     

氩离子激光器输出光功率稳定度与光反馈应用

通过实验观测氩离子激光器工作电流与输出光功率及其稳定性之间的关系，采用光反馈解决了反馈工作点的设置和跟踪调解，使输出光功率稳定性得到明显提高。     

光辐射计量测试技术

简要介绍国外光辐射计量采用的主要方法、测试手段和发展趋势。为了满足国防系统对光辐射计量的需要建立了一批计量标难，解决了光辐射源辐射特性和探测器特性计量测试问题。     

铬（Ⅵ）—DBC—HNO3催化动力学光度法测定痕量铬（Ⅵ）

在硝酸介质中，痕量铬(Ⅵ)能灵敏的催化氧化DBC褪色。研究了反应的最佳条件，建立了测定痕量铬(Ⅵ)的新方法。检出限可达10^-9g／ml，测定范围为0．12--0．7μgCrC(Ⅵ)／10ml，方法简便、灵敏、快速、准确。用于测定水中的痕量铬(Ⅵ)，获得了满意的结果。     

两段级联掺铒光纤放大器的优化研究

基于Giles模型,研究了980 nm和1480 nm泵浦的两段级联掺铒光纤放大器(EDFA)的设计,得出了掺铒光纤(EDF)的最佳长度和光隔离器的最佳位置随泵浦功率和信号功率的变化关系.比较980 nm和1480 nm泵浦的两段级联EDFA,可以发现,前者的最佳EDF长度短,而光隔离器最佳位置距EDFA输入端远.     

Gain Spectrum in an Asymmetric Double Quantum Well

We propose a scheme for light amplification in an asymmetric double quantum well, where two excited states are coupled by resonant tunnelling through a thin barrier in a three-level system of electronic subbands. By applying a single driving laser, the steady state gain can be obtained. The calculated gain spectrum for an asymmetric GaAs/AlGaAs double quantum well structure was presented.     

Multi-Partite EPR Entangled State Representation for Continuous Variables and Its Application in Squeezing Theory

By extending the Einstein-Podolsky-Rosen (EPR) bipartite entanglement to an n-partite case, we construct the common eigenstate of the n-partite total coordinate and relative momenta for the continuous variables. The entanglement property of the state is shown. The classical dilation transform of variables in such a state induces a new n-mode squeezing operator related to an n-mode bosonic operator realization of SU(1,1) Lie algebra.     

Structure and Photoluminescence of Nano-ZnO Films Grown on a Si （100） Substrate by Oxygen- and Argon-Plasma-Assisted Thermal Evaporation of Metallic Zn

Nano-ZnO thin films were prepared by oxygen- and argon-plasma-assisted thermal evaporation of metallic Zn at low temperature, followed by low-temperature annealing at 300℃ to 500℃ in oxygen ambient. X-ray diffraction patterns indicate that the nano-ZnO films have a polycrystalline hexagonal wurtzite structure. Raman scattering spectra demonstrate the existence of interface layers between Zn and ZnO. Upon annealing at 400℃ for i h, the interface mode disappears, and photoluminescence spectra show a very strong ultraviolet emission peak around 381 nm. The temperature-dependent PL spectra indicate that the UV band is due to free-exciton emission.