Time—Resolved Photoluminescence Studies of AlInGaN Alloys

We study the two samples of AlInGaN,i.e.,1-μm Gan grown at 1030℃ on the buffer and followed by a 0.6μm-thick epilayer of AlInGaN under the low pressure of 76 Torr and the AlInGaN layer deposited diectly on the buffer layer without the high-temperature GaN layer,by temperature-dependent photoluminescence(PL) spectroscopy and picosecond time-resolved photoluminescence(TRPL) spectroscopy.The TRPL signals of both the samples were fitted well as a stretched exponential decay at all temperatures,indicating significant disorder in the material.We attribute the disorder to nanoscale quantum dots or discs of high indium concentration.Temperature dependence of dispersive exponent β shows that the stretched exponential decay of the two samples comes from dfferent mechanisms.The different depths of the localization potential account for the difference,which is illustrated by the results of temperature dependence of radiative recombination lifetime and PL peak energy.     

Enhancement of Overall Photovoltaic Efficiency by Changing the Position of the Attaching Group -RSO3- on the Hemicyanine Dye Molecules

A new photoresponsive D-π-A dye, mPS, has been designed and synthesized.Compared to the parent dye PS, IPCE values in the region from 400 nm to 560 nm was greatly improved upon changing the attaching group from the p- position to the o- position of the π-conjugation bridge. A solar cell based on mPS generated a remarkably high overall yield η of 5.4% under irradiation of 80.0 mW cm^-2 white light from a Xe lamp, Compared with PS, the overall yield η increased by 64%.     

同位旋非对称核物质性质与扩展的BHF方法(Ⅲ)HVH定理与费米能量

在扩展的同位旋相关的Brueckner-Hartree-Fock理论框架内,在整个同位旋自由度范围内研究了质量算子的空穴线展开中不同等级近似下非对称核物质中Hugenholtz-Van Hove定理的满足程度,并计算了中子和质子的费米能量.结果表明为了使Hugenholtz-Van Hove定理达到令人满意的满足程度,需要同时考虑质量算子中的重排贡献和重正修正,从而指出了基态关联对于非对称核物质中单粒子性质的重要性.     

光电编码器温度漂移与补偿方法

本文对光电编码器的温度漂移与补偿问题进行了讨论.在理论分析与实验的基础上,提出了一种理想的温度补偿方法.     

伪轨跟踪性质与不变概率测度

本文利用遍历理论讨论有伪轨跟踪性质的紧致度量空间上的连续满射所具有的动力性质和混沌性态．     

钻石型等级晶格上Gauss模型的临界性质

在Gauss模型中 ,假设Gauss分布常数依赖于晶格格点的配位数 ,并且满足关系bqi/bqj=qi/ qj( qi是格点i的配位数 ,bqi是格点i上的Gauss分布常数 ) .利用重整化群变换和自旋重标相结合的方法 ,研究了一族钻石型等级晶格上Gauss模型的临界行为 .结果发现 :这些晶格的铁磁相变性质属于同一普适类 ,其临界点和临界指数分别为K =b_qi/ q_i 和ν=1 / 2 .     

灰对角矩阵的一些性质

本文根据灰对角矩阵的定义．得到一些性质．     

用于光学神经网络硬件系统误差纠正的虚拟神经网络

提出了一种用于修正光学神经网络硬件系统误差的虚拟神经网络模型，光学实验结果表明该网络能够有效地消除硬件系统误差对实验结果的影响。     

高等代数中与域的扩张无关的性质

高等代数这门课程，不用说在工科院校，就是在理科院校，教与学都有困难，因为它太抽象，太理论化了．但这一课程无论就理论上，还是就应用上来说又都是非常重要的，是非学不可的，因此对教师以及想进一步深造的人来说，深刻领会一些有关内容就显得十分必要．