在强碳化物形成元素衬底上生长金刚石薄膜的物理机制探索

作者在研究金刚石表面金属化机理中发现,该物理过程是用化学气相沉积(CVD)方法在强碳化物形成元素上生长金刚石薄膜的逆物理过程。推断在强碳化物形成元素上,诸如WSi,Ta等,生长金刚石薄膜,其界面有相应的碳化物,诸如WC,SiC,TaC等出现,继而生长的金刚石薄膜实质是在相应的碳化物背底上择优取向成核生长的。从而揭示在强碳化物形成元素上生长金刚石薄膜的物理机制是:W(Si,Ta)等→WC(SiC,TaC)等→金刚石薄膜。 关键词：     

通过脉冲超声速度研究谷类茎部组织的生长

超声声速可用来研究谷类茎部组织的发育。通过脉冲波在茎轴线方向上的传播,测量了频率为0.1MHz的纵波声速。样品是薄圆筒,它是在植物生长过程中每3—7天从植物的同一节间位置得到的。植物从生长到成熟过程中,其超声声速由400m/s增加到5000m/s。声速的变化决定于组织发育的不同阶段,厚膜组织中微原细胞纤维素的沉积和细胞壁中生理水的损失对声速的影响最为明显。脉管束纤维的木质化过程将引起脉冲声速的微小变化。由于茎部的发育程度与声速     

超长定向含铁多壁碳纳米管阵列的制备

采用无模板化学气相沉积法,以二茂铁为催化剂,二甲苯为碳源,利用单温炉加热装置制备了定向碳纳米管阵列。运用扫描电子显微镜、透射电子显微镜、拉曼光谱和X射线衍射仪等对定向碳纳米管阵列的形貌、成分和物相进行细致的分析和表征。结果表明:制得的碳纳米管阵列具有良好的定向性和多壁管状结构,并且石墨化程度高;碳纳米管中除碳元素外,管中包含有少量以纳米颗粒和纳米线形式存在的铁及其化合物,主要成分是铁和碳化铁。结合碳纳米管的制备和透射电子显微镜分析表征结果,认为超长碳纳米管阵列的生长模式为底部生长方式,即经历催化剂分解、催化、成核、长大、中毒、凝聚成粒和连接成线的循环过程,正是由于碳源和催化剂的连续供应促成了碳纳米管阵列的快速定向生长。     

建议利用植物的超弱光辐射测量太空返回地面种子的生长状况

目前,在我国航天领域,科技人员对经过太空环境处理过的植物种子返回地面后所显示的优质丰产的生长状况进行了研究,取得了丰硕的成果。植物的超弱光辐射产生于植物细胞新陈代谢的光物理与光化学反应过程中,属于光能量参与植物细胞新陈代谢的多种产物之中的一种[1],可以利用这种植物的超     

Formation Mechanism and Orderly Structures of an Iron Film System Deposited on Silicone Oil Surfaces

A new iron film system,deposited on silicone oil surfaces by vapour phase deposition method,has been fabricated and its formation mechanism as well as orderly structures has been studied,It is found that the formation mechanism of the films obeys a two-stage growth model,which is similar to that to the other metallic films on liquid substrates,Large and orderly structures are observed in the continuous iron films.The experiments show that the orderly spatial structures result from the local material gathering in these nearly free sustained films.     

Optical and Electronic Properties of InGaN／GaN Multi—Quantum—Wells Near—Ultraviolet Lighting—Emitting—Diodes Grown by Low—Pressure Metalorganic Vapour Phase Epitaxy

The near-ultraviolet lighting-emitting-diodes (UV-LEDs) with the InGaN/GaN multi-quantum-well (MQW) structure were grown by low-pressure metalorganic vapour phase epitaxy. The double crystal x-ray diffraction revealed a distinct second-order satellite peak. The near-ultraviolet InGaN/GaN MQW LEDs have been successfully fabricated to emit at 401.2nm with narrow FWHM of 14.3nm and the forward voltage of 3.6 V at 20 mA injection current at room temperature. With increasing forward current from l 0 mA to 50 mA, the redshift of the peak wavelength was observed due to the band-gap narrowing caused by heat generation.     

Low-Temperature Growth of Polycrystalline silicon Films by SiCl4／H2 rf Plasma Enhanced Chemical Vapour Deposition

Polycrystalline silicon film was directly fabricated at 200℃ by the conventional plasma enhanced chemical vapour deposition method from SiCl4 with H2 dilution. The crystallization depends strongly on the deposition power.The maximum crystMlinity and the crystalline grain size are over 80% and 200—50Onm, respectively. The results of energy dispersive spectroscopy and infrared spectroscopy measurements demonstrate that the film is mostly composed of silicon, without impurities such as Cl, N, C and bonded H. It is suggested that the crystallization at such a low temperature originates from the effects of chlorine, i.e., in-situ chemical, etching, in-situ chemical cleaning, and the detachment of bonded H.     

Pt-SDB疏水催化剂的研制

基于液相水-氢同位素催化交换的疏水催化剂研究已有近30年历史。从所报道的资料来看，目前用于重水提氚工艺中相转移的疏水催化剂主要集中在Pt-C-PTFE和Pt-SDB两类材料上。前者疏水性好，耐辐照稳定性好，后者催化活性好，但催化剂耐辐照稳定性稍差。拟在特制的SDB疏水材料上制备出催化活性好，性能稳定，满足使用要求的Pt-SDB疏水催化剂。     

Growth of monodisperse nanospheres of MnFe_2O_4 with enhanced magnetic and optical properties

Highly dispersive nanospheres of MnFe204 are prepared by template free hydrothermal method. The nanospheres have 47.3-nm average diameter, narrow size distribution, and good crystallinity with average crystallite size about 22 nm. The reaction temperature strongly affects the morphology, and high temperature is found to be responsible for growth of uniform nanospheres. Raman spectroscopy reveals high purity of prepared nanospheres. High saturation magnetization （78.3 emu/g）, low coercivity （45 Oe, 10e = 79.5775 A.cm-1）, low remanence （5.32 emu/g）, and high anisotropy constant 2.84 × 10^4 J/m3 （10 times larger than bulk） are observed at room temperatures. The nearly snperparamagnetic behavior is ~ spin due to comparable size of nanospheres with superparamagnetic critical thameter Dcr spm The high value of Keff may be due to coupling between the pinned moment in the amorphous shell and the magnetic moment in the core of the nanospheres. The nanospheres show prominent optical absorption in the visible region, and the indirect band gap is estimated to be 0.98 eV from the transmission spectrum. The prepared Mn ferrite has potential applications in biomedicine and photocatalysis.