两种测试高温超导薄膜微波表面电阻方法的讨论

介绍两种工作在12GHz附近的高温超导薄膜微波表面电阻Rs测试系统,并分析各自的特点.同时简介电子科技大学在提高Rs测试精度上所作的一些改进.     

InGaAs/GaAs应变量子阱的发光特性研究

利用低压金属有机化学气相沉积技术(LP-MOCVD)生长InGaAs/GaAs单量子阱(SQW),通过改变生长速率、优化生长温度和V/III比改善了量子阱样品的室温光致发光(PL)特性。测试结果表明,当生长温度为600℃、生长速率为1.15μm/h时,生长的量子阱PL谱较好,增加V/III比能够提高量子阱的发光强度。实验分析了在不同的In气相比条件下,生长速率对量子阱质量的影响,利用模型解释了高In气相比时,随着生长速率增加PL谱蓝移现象消失的原因。     

Microstructure and optical properties of nitrogen-doped ZnO film

The nitrogen doping of ZnO film deposited by the magnetron sputtering method is subsequently realized by the hydrothermal synthesis method.The nitrogen-doped ZnO film is preferably(002) oriented.With the increase of hexamethylenetetramine(HMT) solution concentration,the average grain size of the film along the 002 direction almost immediately decreases and then monotonously increases,conversely,the lattice strain first increases and then decreases.The structural evolution of the film surface from compact and even to sparse and rough is attributed to the enhanced nitrogen doping content in the hydrothermal process.The transmission and photoluminescence properties of the film are closely related to grain size,lattice strain,and nitrogen-related defect arising from the enhanced nitrogen doping content with HMT concentration increasing.     

纳米TiO2∶Zn薄膜电极紫外光电特性研究

采用sol-gel法制备了Zn2+掺杂的锐钛矿相纳米TiO2薄膜电极.通过光电流作用谱和电流-电位（I-U）曲线研〖WTBZ〗究了掺杂不同浓度Zn2+的TiO2薄膜电极的光电特性.由光电流作用谱可知，Zn2+的掺杂可显著影响薄膜电极的光电流大小，且掺杂的最佳浓度与薄膜晶粒尺度有关.在320nm单色光照射下，掺杂浓度（摩尔浓度）为0.1％的薄膜电极光电流最大，与未掺杂的本征薄膜电极相比增幅达40％.I-U曲线表明，光照下，随电极电位由正到负逐渐降低，不同掺杂浓度的TiO2薄膜电极中均出现了阳极电流向阴极电流转换的现象，且Zn2+掺杂浓度可影响电极阳极电流的初始电位.另外，无光照的暗态下，各薄膜在负电位区域观察到了相似的随电位降低而迅速增大的阴极暗电流.     

160-Gb/s NRZ-DQPSK optical transmission system employing QC-LDPC code

A quasi-cyclic low-density parity check （QC-LDPC） code is constructed by an improved stability of the shortest cycle algorithm for 160-Gb/s non-return zero differential quadrature phase shift keying （NRZ- DQPSK） optical transmission system with the fiber-based optical parametric amplifier （FOPA）. The QC- --14 d LDPC code with stability of the shortest cycle reduces the bit error ratio （BER） to 10 an restrains the error floor effectively.     

Epitaxial growth of Ge1-xSnx films with x up to 0.14 grown on Ge （001） at low temperature

We characterize the structures of Ge1-xSnx films with x up to 0.14 grown on Ge （001） by molecular-beam epitaxy at low temperature. The results show that Ge1-xSnx films are fully strained even at high Sn composition. The in-plane lattice parameters remain exactly the same as that of the substrate. Depth sensitivity analysis of the lattice parameters indicates that the strains of the epitaxial films are all in homogeneity. The films are fully strained. Poisson ratios, the force constants for the bonds between Ge and Sn are estimated and discussed in the present paper. Raman results show Ge-Ge, Ge-Sn, Sn-Sn vibrational modes. The Sn-Sn bond aggregation may respond to the high quality of our films. The fully strained epitaxy films with high content of Sn may be useful in designing the high quality GeSn films.     

Crystallization Kinetics Study on Magnetron-Sputtered Amorphous TiA1 Alloy Thin Films

Crystallization kinetics of magnetron-sputtered amorphous TiAl ahoy thin films is investigated by differential scanning calorimetry through isothermal analysis and non-isotherm analysis. In non-isothermai analysis, the Kissinger method and the Ozawa method are used to calculate the apparent activation energy and local activation energy, respectively, in the crystallization processes of amorphous TiA1 thin films. Furthermore, the crystallization mechanism is discussed from the investigation of the A vrami exponent by isothermal analysis. In addition, x-ray diffraction is utilized to reveal the grain orientation and evolution during the crystallization of TiA1 thin fihns.     

厚二氧化硅光波导薄膜制备及其特性分析

以硅烷和氧化二氮作为反应气体，采用等离子体增强化学气相沉积(PECVD)技术，不使用掺杂，在单晶硅衬底上制备了用于平面光波导的二氧化硅薄膜。研究了薄膜折射率和淀积速率与工艺参量之间的关系，通过棱镜耦合仪、傅里叶变换红外光谱、原子力显微镜等测试手段，分析了薄膜的结构和光学特性。结果表明，实验能快速生长厚二氧化硅薄膜，薄膜表面平整，颗粒度均匀，同时薄膜具有折射率精确可控和红外透射性能好的特点，非常适合制作光波导器件。     

Light induced microstructure transformation in a-Si：H films

A series of a-Si:H films are deposited by hot wire assisted microwave electron cyclotron resonant chemical vapour deposition (HW-MWECR-CVD), subsequently exposed under simulated illumination for three hours. This paper studies the microstructure change during illumination by Fourier Transformation Infrared (FTIR) spectra. There are two typical transformation tendencies of microstructure after illumination. It proposes a model of light induced structural change based on the experimental results. It is found that all samples follow the same mechanism during illumination, and intrinsic structure of samples affect the total H content.