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131.
132.
介绍了用溶胶-凝胶法(sol-gel)在Pt/Ti/SiO2/Si衬底和石英衬底上制备Ba(Zr0.3Ti0.7)O3铁电薄膜的基本原理、工艺过程及工艺特点;Sol-gel制备的Ba(Zr0.3Ti0.7)O3铁电薄膜表面平整、厚度均匀. 相似文献
133.
全局半稳定的三次系统 总被引:3,自引:0,他引:3
当每个解都正向趋于零时,本文证明,虽然二次系统的奇点必为渐近稳定,但是在同样的条件下,某些三次系统的奇点能够是不稳定的. 相似文献
134.
Large quantities of CaN nanorods are successfully synthesized on Si(111) substrates by ammoniating the films of Ga2O3/ZnO at 950℃ in a quartz tube. The structure, morphology and optical properties of the as-prepared CaN nanorods are studied by x-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, Fourier transform infrared spectroscopy, and photoluminescence. The results show that the CaN nanorods have a hexagonal wurtzite structure with lengths of several micrometres and diameters from 80 nm to 300hm, which could supply an attractive potential to harmonically incorporate future GaN optoelectronic devices into Si-based large-scale integrated circuits. The growth mechanism is also briefly discussed. 相似文献
135.
Crystal-Orientation Dependent Evolution of Edge Dislocations from a Void in Single Crystal Cu
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The micro-void growth by dislocation emission under tensile loading is explored with focus on the influence of crystal orientations. Based on the elastic theory, a dislocation emission criterion is formulated. It is predicted that the preferential location of dislocation nucleation and its threshold stress are dependent on the crystal orientation. Large-scale molecular dynamics (MD) simulations are also performed for single crystal copper to illustrate the dislocation evolution pattern associated with a nano-void growth. The results are in line with those given by the theoretical prediction. As revealed by MD simulations, the characteristics of void growth at micro-scale depend greatly on the crystal-orientation. 相似文献
136.
The possible defect models of Y^3+:PbWO4 crystals are discussed by defect chemistry and the most possible substituting positions of the impurity Y^3+ ions are studied by using the general utility lattice program (GULP). The calculated results indicate that in the lightly doped Y^3+ :PWO crystal, the main compensating mechanism is [2Ypb^+ + VPb^2-], and in the heavily doped Y^3+ :PWO crystal, it will bring interstitial oxygen ions to compensate the positive electricity caused by YPb^+, forming defect clusters of [2Ypb^+ +Oi^2-] in the crystal. The electronic structures of Y3+ :PWO with different defect models are calculated using the DV-Xα method. It can be concluded from the electronic structures that, for lightly doped cases, the energy gap of the crystal would be broadened and the 420nm absorption band will be restricted; for heavily doped cases, because of the existence of interstitial oxygen ions, it can bring a new absorption band and reduce the radiation hardness of the crystal. 相似文献
137.
The mutual interaction of three different defects in photonic crystals is studied theoretically. A theoretical model based on the classical wave analogue of the tight-binding (TB) picture is applied to the structure. We obtain analytic expressions for the eigenfrequencies and eigenmodes, from which the transmissions at resonance are derived. Based on this, a new type of the photonic quantum-well structure is investigated and its possible application is discussed. The TB predictions are compared with the transfer matrix method simulation results. 相似文献
138.
We investigate the new spinor field realizations of the W3 algebra, making use of the fact that the W3 algebra can be linearized by the addition of a spin-1 current. We then use these new realizations to build the nilpotent Becchi-Rouet-Stora-Tyutin charges of the spinor non-critical W3 string. 相似文献
139.
140.
用三次设计方法进行抛撒器的设计 总被引:1,自引:1,他引:0
研究抛撒器的运动规律及其对目标的作用,对某些军工产品具有实用价值.目前,对抛撒器的研制,国内外的专业研究单位和厂家都比较重视,但做得还很不够,我们设计的运载抛撒器,在一次重复试验中,就有近五分之一的机构在开舱后没有出现抛撒过程.这说明这种抛撒 相似文献