Progress in improving thermodynamics and kinetics of new hydrogen storage materials

Hydrogen storage material has been much developed recently because of its potential for proton exchange membrane (PEM) fuel cell applications. A successful solid-state reversible storage material should meet the requirements of high storage capacity, suitable thermodynamic properties, and fast adsorption and desorption kinetics. Complex hydrides, including boron hydride and alanate, ammonia borane, metal organic frameworks (MOFs), covalent organic frameworks (COFs) and zeolitic imidazolate frameworks (ZIFs), are remarkable hydrogen storage materials because of their advantages of high energy density and safety. This feature article focuses mainly on the thermodynamics and kinetics of these hydrogen storage materials in the past few years.     

Ti-doped nano-porous graphene: A material for hydrogen storage and sensor

Clustering of Ti on carbon nanostructures has proved to be an obstacle in their use as hydrogen storagematerials. Using density functional theory we show that Ti atoms will not cluster at moderate concentrations when doped into nanoporous graphene. Since each Ti atom can bind up to three hydrogen molecules with an average binding energy of 0.54 eV/H₂, this material can be ideal for storing hydrogen under ambient thermodynamic conditions. In addition, nanoporous graphene is magnetic with or without Ti doping, but when it is fully saturated with hydrogen, the magnetism disappears. This novel feature suggests that nanoporous graphene cannot only be used for storing hydrogen, but also as a hydrogen sensor.     

Excited‐state hydrogen bond strengthening of coumarin 153 in ethanol solvent: a TDDFT study

So far, coumarin dyes have been extensively studied with various means to understand their photophysical behaviors and photochemical properties. Here, our performing time‐dependent density functional theory calculation is aimed at exploring the excited‐state hydrogen bonding dynamics of coumarin 153 (C153) in protic ethanol (EtOH) solvent. The calculated results suggest that the excited‐state hydrogen bond C?O?H?O between C?O group and O?H group in the C153‐EtOH complex is strengthened, and the S₀ → S₁ transition of the complex corresponds to the highest occupied molecular orbital (HOMO) hopping to the lowest unoccupied molecular orbital (LUMO). The excited‐state hydrogen bond strengthening has been further confirmed by its larger binding energy in the S₁ state than in the S₀ state. In addition, because of the formation of the hydrogen bond C?O?H?O, a red shift of about 7 nm occurs in the electronic spectra of the C153‐EtOH complex, which is in good accordance with the experiment result. Copyright © 2016 John Wiley & Sons, Ltd.     

Synthesis and characterization of a family of layered trichalcogenides for assisted hydrogen photogeneration

Three layered trisulfides (TiS₃, ZrS₃, HfS₃) have been synthesized by solid–gas reaction between metal and sulfur in a vacuum sealed ampoule at 550 °C during 60 h. The samples used in this work were prepared from a colloidal suspension of powder of each one of the metal trisulfides (MS₃, M = Ti, Zr, Hf) in ethanol and deposited on titanium disks and quartz substrates by ”drop coating” technique. These samples have been characterized by X‐ray diffraction, energy dispersive analysis of X‐ray and scanning electron microscopy. The obtained direct optical band gaps are 1.0 ± 0.1 eV, 2.0 ± 0.1 eV and 2.2 ± 0.1 eV for TiS₃, ZrS₃ and HfS₃, respectively. Photoelectrochemical measurements in 0.5 M Na₂SO₃ have been carried out to characterize the MS₃/electrolyte interface. The flat‐band potentials (V_fb) vs. Ag/AgCl measured by electrochemical impedance spectroscopy (EIS) are –0.84 ± 0.02 V (TiS₃), –0.93 ± 0.02 V (ZrS₃) and –0.92 ± 0.02 V (HfS₃). Hydrogen generation was investigated in a photoelectrochemical cell (PEC) with MS₃ as photoanodes under white light illumination of 200 ± 20 mW/cm² at external bias potentials of 0.3 V vs. Ag/AgCl. Hydrogen evolution flows have been quantified by quadrupole mass spectrometry (QMS) reaching instantaneous values up to 19 ± 2 nmol H₂/min cm² with TiS₃ as photoanode.     

Model based prediction of the trap limited diffusion of hydrogen in post‐hydrogenated amorphous silicon

The diffusion of hydrogen within an hydrogenated amorphous silicon (a‐Si:H) layer is based on a trap limited process. Therefore, the diffusion becomes a self‐limiting process with a decreasing diffusion velocity for increasing hydrogen content. In consequence, there is a strong demand for accurate experimental determination of the hydrogen distribution. Nuclear resonant reaction analysis (NRRA) offers the possibility of a non‐destructive measurement of the hydrogen distribution in condensed matter like a‐Si:H thin films. However, the availability of a particle accelerator for NRR‐analysis is limited and the related costs are high. In comparison, Fourier transform infrared spectroscopy (FTIR) is also a common method to determine the total hydrogen content of an a‐Si:H layer. FTIR spectrometers are practical table‐top units but lack spatial resolution. In this study, an approach is discussed that greatly reduces the need for complex and expensive NRR‐analysis. A model based prediction of hydrogen depth profiles based on a single NRRA measurement and further FTIR measurements enables to investigate the trap limited hydrogen diffusion within a‐Si:H. The model is validated by hydrogen diffusion experiments during the post‐hydrogenation of hydrogen‐free sputtered a‐Si. The model based prediction of hydrogen depth profiles in a‐Si:H allows more precise design of experiments, prevents misinterpretations, avoids unnecessary NRRA measurements and thus saves time and expense. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Role of a‐Si:H bulk in surface passivation of c‐Si wafers

The low thermal stability of hydrogenated amorphous silicon (a‐Si:H) thin films limits their widespread use for surface passivation of c‐Si wafers on the rear side of solar cells. We show that the thermal stability of a‐Si:H surface passivation is increased significantly by a hydrogen rich a‐Si:H bulk, which acts as a hydrogen reservoir for the a‐Si:H/c‐Si interface. Based on this mechanism, an excellent lifetime of 5.1 ms (at injection level of 10¹⁵ cm^–3) is achieved after annealing at 450 °C for 10 min. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Hydrogen bonding in nitrofurantoin polymorphs: a computation‐assisted spectroscopic study

The importance of hydrogen‐bond formation in the molecular packing arrangements of two anhydrous forms of nitrofurantoin is investigated, combining computational methods and spectroscopic data. The overall results indicate, as expected, that the vibrational modes related to the CO, N H and C H groups are strongly affected by intermolecular hydrogen‐bond formation. Moreover, the importance of weak C‐H···O interactions in conferring additional stability to molecular associations in biological systems is evidenced in this study. The complete assignment of the Raman and infrared spectra of both polymorphs is accomplished by means of a computationally based methodology, which accounts for the effects of intermolecular interactions in the crystal. The vibrational shifts due to crystal packing interactions are evaluated from DFT calculations for a set of suitable molecular pairs, using the B3LYP/6‐31G* approach. This methodology provides an answer to the current demand for a reliable and complete assignment of the vibrational spectra of pharmaceutically active compounds such as nitrofurantoin. Copyright © 2009 John Wiley & Sons, Ltd.     

Novel materials for electronic device fabrication using ink-jet printing technology

Novel materials and a metallization technique for the printed electronics were studied. Insulator inks and conductive inks were investigated. For the conductive ink, the nano-sized copper particles were used as metallic sources. These particles were prepared from a copper complex by a laser irradiation process in the liquid phase. Nano-sized copper particles were consisted of a thin copper oxide layer and a metal copper core wrapped by the layer. The conductive ink showed good ink-jettability. In order to metallize the printed trace of the conductive ink on a substrate, the atomic hydrogen treatment was carried out. Atomic hydrogen was generated on a heated tungsten wire and carried on the substrate. The temperature of the substrate was up to 60 °C during the treatment. After the treatment, the conductivity of a copper trace was 3 μΩ cm. It was considered that printed wiring boards can be easily fabricated by employing the above materials.     

C@Al_(12)团簇吸附H的密度泛函理论研究

利用密度泛函理论的方法研究了C@Al12Hn(1≤n≤7)团簇的结构和稳定性.n为偶数的C@Al12Hn具有更高的稳定性,大的HOMO-LUMO能隙、H原子的结合能以及高的垂直电离势表明这些团簇具有很高的物理和化学稳定性.最高占据分子轨道电荷密度分析显示,偶数n的C@Al12Hn团簇中,一对H原子倾向于占据相反的位置.变形电荷密度分析表明H原子与主体C@Al12之间的结合表现为共价键的特征.对奇数n的C@Al12Hn都具有1μB的磁矩.     

分子动力学模拟和自由能计算研究孕酮和孕酮受体蛋白的结合模式

孕酮在确立和维持妊娠中起到了关键的作用. 为了研究孕酮和孕酮受体蛋白的结合模式,进行了3.5纳秒的分子动力学模拟,用 MM-PBSA\GBSA方法计算了结合自由能. 自由能分解和丙氨酸扫描两种方法说明,残基 Leu718, Met756, Met759, Phe778 和 Tyr890 对于结合抑制剂作用明显,这些残基的主要作用能是范德瓦尔斯作用能. 这一研究结果可以指导孕酮受体蛋白抑制剂的优化