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1.
The Li oxides species formed on Li over-deposited V2O5 thin film surfaces have been studied by using X-ray and UV induced photoelectron spectroscopy (XPS and UPS). The photoelectron spectroscopic data show that the Li over-deposited V2O5 system itself is not stable. Further chemical decomposition reactions are taken place even under UHV conditions and lead to form Li2O and Li2O2 compounds on the surface. The formation of Li2O2 causes to arise an emission line at about 11.3 eV in the valence band spectra. 相似文献
2.
《Surface and interface analysis : SIA》2006,38(9):1257-1265
Four vanadium oxide layers on mineral TiO2(001)‐anatase supports with different thickness (3–33 Å) were prepared with reactive d.c. magnetron sputtering and were extensively studied with photoelectron spectroscopy. Al Kα radiation and 150 eV synchrotron radiation were used as excitation sources. The evolution of the 2p, 3s and 3p core level line shapes of V and Ti as a function of the vanadium oxide thickness was studied, as well as the O1s and O2s core lines and the valence band. All the V2p spectra of the deposited vanadium oxide layers consist of at least 60% V5+, the rest being V4+. The V3p region is complicated by multiplet splitting, which prevents the determination of the vanadium oxidation state. The V3p multiplet splitting is different for the two excitation energies. No reduction of the titania support surface due to the vanadium oxide deposition was observed. Copyright © 2006 John Wiley & Sons, Ltd. 相似文献
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对于NO分子轨道的能级次序现有两种不同的说法,不少人根据NO与O_2~+是等电子体,由O_2~+分子的能级次序确定NO分子组态。本文用NO和O_2~(+)从头计算结果以及NO的紫外光电子能谱相结合的方法说明NO的5σ轨道是弱成键轨道,5σ的轨道能稍高于1π轨道能,也就是说NO的能级次序是与N_2分子相同的;NO与O_2~+虽是等电子体,但是能级次序并不相同,因此由O_2~+的能级次序确定NO分子的电子组态是不妥的。 相似文献
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6.
In this review, thin films of SiO2 on Mo(1 1 2) and MgO(1 0 0) on Mo(1 0 0) have been characterized using metastable impact electron and ultraviolet photoelectron spectroscopies (metastable impact electron spectroscopy (MIES) and ultraviolet photoelectron spectroscopy). The electronic and chemical properties of the thin films are identical to those of the corresponding bulk oxides. For different prepared defective SiO2 surfaces, additional features are observed in the band-gap region. These features arise from vacancies or excess oxygen and are consistent with theoretical predictions of additional occupied states in the band-gap due to point defects. Extended defect sites on SiO2 and MgO are identified using MIES by a narrowing of the O(2p) features with a reduction in the density of extended defect sites. MIES of adsorbed Xe (MAX) is also used to estimate the density of extended defect sites. Furthermore, it is shown that CO is an appropriate probe molecule for estimating the defect density of MgO surfaces. Upon Ag exposure, the change in the work function of a low defect MgO(1 0 0) versus a high defect surface is markedly different. For a sputter-damaged MgO(1 0 0) surface, an initial decrease of the work function was found, implying that small Ag clusters on this surface are electron deficient. In contrast, for SiO2 no significant change of the work function upon Ag exposure with increasing defect density was observed. On MgO(1 0 0), the presence of defect sites markedly alter the electronic and chemical properties of supported Ag clusters. Such a strong influence of defect sites was not found for Ag clusters on SiO2. 相似文献
7.
Kentaro Iwasaki Kazunori Umishita Shojun Hino Koichi Kikuchi Yohji Achiba 《Molecular Crystals and Liquid Crystals》2013,570(1):623-628
Abstract Ultraviolet photoelectron spectra of potassium dosed higher fullerenes are measured with a synchrotron radiation light source. Potassium dosing to higher fullerenes brings a new structure between the spectral onset of pristine fullerenes and the Fermi level. As the spectral edge of the new structure does not cross the Fermi level, potassium dosed higher fullerenes are not metallic but semiconductive. When the potassium is excessively dosed to the fullerenes, the lower binding energy structures above 5 eV become faint. In contrast to this phenomenon, four distinct structures appear between 5 and 14 eV. 相似文献
8.
Hyun Ook Seo Myung‐Geun Jeong Kwang‐Dae Kim Dae Han Kim Young Dok Kim Dong Chan Lim 《Surface and interface analysis : SIA》2014,46(8):544-549
Degradation behaviors of poly(3‐hexylthiophene‐2,5‐diyl) (P3HT) layers on NiO in the presence of H2O at ambient pressure and dark conditions were studied using X‐ray photoelectron spectroscopy (XPS). Upon H2O exposure at 120 °C, partial oxidation of P3HT together with molecular water incorporation, but with the maintained local ring‐structure, were deduced by XPS. Valence band spectra of XPS evidenced that the partial oxidation of P3HT local structure could alter π‐conjugation systems of P3HT layers, forming additional electronic states close to its original highest occupied molecular orbital. For comparison, P3HT surface was also exposed to O2, and no change in the S 2p and C 1s spectra was found by O2 exposure at 120 °C, implying that H2O plays a major role at the initial stage of P3HT oxidation. Copyright © 2014 John Wiley & Sons, Ltd. 相似文献
9.
Alessio Mezzi Eleonora Bolli Saulius Kaciulis Matteo Mastellone Marco Girolami Valerio Serpente Alessandro Bellucci Riccardo Carducci Riccardo Polini Daniele M. Trucchi 《Surface and interface analysis : SIA》2020,52(12):968-974
Thin films of barium fluorides with different thicknesses were deposited on GaAs substrate by electron beam evaporation. The aim of the work was to identify the best growth conditions for the production of coatings with a low work function suitable for the anode of hybrid thermionic-photovoltaic (TIPV) devices. The chemical composition and work function φ of the films with different thicknesses were investigated by X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). The lowest value of φ = 2.1 eV was obtained for the film with a thickness of ~2 nm. In the valence band spectra of the films at low kinetic energy, near the cutoff, a characteristic peak of negative electron affinity was present. This effect contributed to a further reduction of the film's work function. 相似文献
10.
Masahiro Terashima Takuya Miyayama Tetsuro Shirao Hin Wai Mo Yasuhiro Hatae Hiroshi Fujimoto Katsumi Watanabe 《Surface and interface analysis : SIA》2020,52(12):948-952
Low-energy inverse photoelectron spectroscopy (LEIPS) and ultraviolet photoelectron spectroscopy (UPS) incorporated into the multitechnique XPS system were used to probe the ionization potential and the electron affinity of organic materials, respectively. By utilizing gas cluster ion beam (GCIB), in situ analyses and depth profiling of LEIPS and UPS were also demonstrated. The band structures of the 10-nm-thick buckminsterfullerene (C60) thin film on Au (100 nm)/indium tin oxide (100 nm)/glass substrate were successfully evaluated in depth direction. 相似文献