Simulation of Birefringence and Absorption in InGaAs-GaAs Multiple Quantum Well Acoustooptic Modulators Operating Near 980 nm

This paper presents the simulation of surface acoustic wave (SAW)-induced absorption coefficient and refractive index change in InGaAs-GaAs multiple quantum well (MQW) structures operating near 980 nm. The exciton problem is solved in two dimensional momentum space to include the non-axial effect due to strain induced valance band mixing and nonparabolicity. The optical absorption coefficient and refractive index changes near the band gap in the MQWs are calculated as a function of SAW power.     

A compact optical heterodyne interferometer by optical integration and its application

A compact high-resolution optical heterodyne interferometer combining a two-frequency light module and a minute optical system is described. The light module, which generates two independent frequencies of light, is fabricated by proton exchange method on LiNbO₃ substrate. We report an experiment evaluating measurement accuracy using a micro-displacement measurement system which incorporates this interferometer. Results of the experiment with a standard thickness sample show high thermal stability with maximum measurement error of 1.8 nm at a temperature from 19°C to 33°C. The system was used to measure the hysteresis of a piezoelectric element for displacements of several nm, thereby making it possible to analyze the system quantitatively in practice.     

应用LiNbO_3声表面波驱动的全光纤声光频移器

介绍一种工作在10.7MHz的全光纤声光频移器.它由在LiNbO_3基片上制作的叉指电极换能器产生的声表面波驱动.当驱动电功率1.5W时,频移光转换效率达35％.     

基于ANSYS提取单相单向换能器耦合模参数

基于有限元理论,给出了基于ANSYS提取单相单向换能器（Single Phase Unidirectional Transducers,SPUDT）耦合模参数的方法。首先,结合声表面波在压电介质中的传播原理,给出了压电有限元分析方程和对应的ANSYS分析步骤。然后针对SPUDT结构,给出了周期性近似分析的理论模型,利用耦合场分析对其进行模态分析和谐响应分析,最后结合两者的结果来计算SPUDT的耦合模参数。本文给出基底材料为压电晶体128°YX-LiNbO₃和YZ-LiNbO₃,电极材料为铝的三种不同SPUDT的计算结果,理论结果与Hashimoto和Hartmann文献报道的结果相吻合,并且和实验测试的结果基本一致。从而给出了提取SPUDT耦合模参数的一种通用、有效的方法。     

The effect of post-annealing on surface acoustic wave devices based on ZnO thin films prepared by magnetron sputtering

Zinc oxide (ZnO) thin films were deposited on unheated silicon substrates via radio frequency (RF) magnetron sputtering, and the post-deposition annealing of the ZnO thin films was performed at 400 °C, 600 °C, 800 °C, and 1000 °C. The characteristics of the thin films were investigated by X-ray diffractometry (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The films were then used to fabricate surface acoustic wave (SAW) resonators. The effects of post-annealing on the SAW devices are discussed in this work. Resulting in the 600 °C is determined as optimal annealing temperature for SAW devices. At 400 °C, the microvoids exit between the grains yield large root mean square (RMS) surface roughness and higher insertion losses in SAW devices. The highest RMS surface roughness, crack and residual stress cause a reduction of surface velocity (about 40 m/s) and increase dramatically insertion loss at 1000 °C. The SAW devices response becomes very weak at this temperature, the electromechanical coupling coefficient (k²) of ZnO film decrease from 3.8% at 600 °C to 1.49% at 1000 °C.     

声表面波MIM隧道发光二极管

我们在研究MIM隧道发光结(金属-绝缘层-金属)的过程中,首次以表面声波代替表面随机粗糙度的作用,将MIM结制作在声表面波场中,结果使结的发光效率、发光强度、稳定性、均匀性都有改善.本文介绍了结的基本结构,基本工艺,阐明了结的发光机理,讨论了结的Ⅰ-Ⅴ特性曲线和光谱曲线,根据结具有显著的负阻现象,我们设计出了一种新型的开关器件.     

声表面波梯形谐振滤波器的级间补偿

梯形SAW滤波器在进行级联后,其通带的低端会出现下陷,使得级联后的通带特性变坏。本文从阻抗匹配的角度分析了通带低端出现下陷的原因,并采用了在级间加谐振器进行补偿的改进方法,最后给出了理论模拟及实验结果。     

声表面波梯形谐振滤波器级联结构的研究

本对声表面波梯形谐振滤波器4级级联的5种不同级联结构进行了理论分析，计算出了其频响特性曲线。对5种不同结构的特性进行了比较，得出了不同结构在带宽、矩形系数、带外抑制等方面的特性，以期对以后实际器件的设计提供理论根据。     

Controlled surface crystallization of fused silica by Li+-Ion implantation

A new method of producing a glass-ceramic surface layer on fused silica has been demonstrated using Li⁺-ion implantation and relatively low-temperature annealing. Infrared reflection spectroscopy (IRS) was used to study the effects of ion implantation on structural changes. Isochronal annealing of samples implanted with 250 keV Li⁺/cm² brings about a dramatic change in the IRS spectra at 800°C in that it becomes identical with that of α-quartz. The dependence of the degree of crystallization on temperature, Li⁺-ion fluence, and silica type was studied.     

利用准谐频叉指换能器实现GHz高频SAW滤波器

本文利用准谐频设计方法,在常规光刻工艺水平上,成功地实现了ＧＨＺ级声表面波（ＳＡＷ）器件,准谐频叉指换能器（ＱＨＩＤＴ）的优点为：其指条宽与指间隙可以比一般的单指换能器宽,克服了单指换能器内指间的多次反射,并且又较好地解决了普通谐频叉指换能器基频抑制不好的缺点,本文给出了制作在ＳＴ石英基片上,工作频率１１２８ＭＨＺ的声表面波滤波器的实验结果。