一个高密度连续射流团簇离子束源

根据在喷嘴出口附近电子枪来电离产生离子种子，在射流中形成连续，高密度的团簇离子束的设计思想，建造了连续的团簇离子束源，探索并优化了影响团簇离子束质量的因素，如电子枪的位置，滤束器的结构，滤束器与喷嘴间的距离等，初步研究了进气配对比氮氩团簇离子形成的影响，以氩气作为载体，适量的氮气，有助于Ａｒ－Ｎ＾＋２的形成。     

Equation of State of Dense Liquid Nitrogen in the Region of the Dissociative Phase Transition

We have measured the equation of state for liquid nitrogen compressed dynamically to a pressure of 10-60 GPa by employing a two-stage light-gas gun.The data show a continuous phase transition above the shock pressure of 33GPa,as indicated previously by shock wave experiments.A theoretical model has been derived to examine the experimental data by inducing a molecular dissociative fraction.According to theoretical and experimental date the phase transition was thought to be a molecular dissociative phase transition.     

Crystal Structure of Adduct 2-Phenyl-imidazo [ 4,5-f ] 1,10-phenanthroline Methanol

The structure of the title adduct comprises a phenanthroline derivative 2-phenyl-imidazo[4,5-f]1,10-phenanthroline and a methanol.The composition of the crystalline adduct was characterized as C19H12N4.CH3OH.It belongs to orthorhombic system,space group Pna21 with a=1.3693(4)nm,b=2.2988(7)nm,c=0.51338(15)nm,V=1.6160(8)nm^3.Z=4,and final R1=0.0423.wR2=0.1012 .Crystal structure shows that all the 19 carbon atoms and 4 nitrogen atoms are coplanar.The bond length data indicated that a very extensive conjugation system was formed.This conjugation makes the compound being a potentially excellent energy transformer used for luminescent materials.     

Time—Resolved Photoluminescence Studies of AlInGaN Alloys

We study the two samples of AlInGaN,i.e.,1-μm Gan grown at 1030℃ on the buffer and followed by a 0.6μm-thick epilayer of AlInGaN under the low pressure of 76 Torr and the AlInGaN layer deposited diectly on the buffer layer without the high-temperature GaN layer,by temperature-dependent photoluminescence(PL) spectroscopy and picosecond time-resolved photoluminescence(TRPL) spectroscopy.The TRPL signals of both the samples were fitted well as a stretched exponential decay at all temperatures,indicating significant disorder in the material.We attribute the disorder to nanoscale quantum dots or discs of high indium concentration.Temperature dependence of dispersive exponent β shows that the stretched exponential decay of the two samples comes from dfferent mechanisms.The different depths of the localization potential account for the difference,which is illustrated by the results of temperature dependence of radiative recombination lifetime and PL peak energy.     

不对称五氮齿扩展卟啉配合物的激发态性能研究

研究了不对称五氮齿扩展叶啉配合物的激发态性能.结果表明:随苯环上取代基变化,其发射光谱出现在770～820 nm的近红外区域,荧光量子产率小于0.02,寿命小于(?)ns.最低激发单重态能量、荧光量子产率分别和对位取代的 Hammett常数及亲电取代的Hammett常数存在很好的线性关系.激发三重态的能量为123kJ/mol左右,T_1～T_n吸收峰值出现在460～490nm区域,三重态寿命在几十微秒量级,敏化产生单重态氧的量子产率可高达0.9以上.