横向外延过生长磷化铟材料的生长速率模型

分别考虑气相扩散和掩膜表面扩散过程，建立了金属有机化学气相沉积条件下横向外延过生长的速率模型. 在砷化镓衬底上外延磷化铟条件下，模拟得到了生长速率随掩膜/窗口宽度(m/w)变化的关系. 通过讨论掩膜/窗口宽度的影响，说明了掩膜宽度、窗口宽度以及有效掩膜宽度是决定生长速率的关键因素. 以上结论与实验结果一致. 关键词： 横向外延 生长模型 扩散 生长速率     

对等网络应用中的网络统计特征分析

本文基于实测数据抽象出用户网络与资源网络,探讨了对等网络中用户、资源及其内部的相互作用关系,发掘并分析了其内在的网络统计特征. 分析结果表明,用户节点度值及权值呈分段分布,体现了其各异的活跃性;网络资源的流行度差异明显,度值和权值近似呈幂律分布. 用户网络与资源网络存在分簇结构,少数簇中含大量节点,多数簇所含节点数量较少. 用户网络中,同簇内的用户有着相似的兴趣趋向,不同簇用户间兴趣趋向存在着差异,资源网络各簇中不同类别的资源间呈现出明显的关联性.     

实现20Gbit/s的OTDM孤子信号56km色散位移光纤的传输

在国内最先采用孤子的方式将8×2.5Gb/s的OTDM信号在色散位移光纤中传输了56.1km,对8×2.5Gb/s的OTDM进行解复用后进行了误码测量,系统功率代价为2.9dB.系统采用增益开关半导体激光器作光孤子源,高Q电滤波方式提取时钟,非线性光学环路镜解复用。孤子脉冲最大半宽度为20ps,传输光纤平均色散1.2ps/nm/km。     

Simultaneous clock recovery and demultiplexing of a 320 Gb/s OTDM system using an optoelectronic oscillator based on cascaded MZM and PolM

An improved optoelectronic oscillator scheme for an optical time division multiplexing(OTDM) system based on cascaded Mach-Zehnder modulator(MZM) and polarization modulator(PolM) is experimentally investigated.The system can simultaneously realize clock recovery and demultiplexing.With the MZM working at peak point to generate return-to-zero-33 optical pulses and the PolM working as an equivalent intensity modulator,a high-quality clock signal with 35-fs timing jitter is extracted from the 160-GBaud OTDM-differential quaternary phase-shift keying signal.Narrow short optical switch gates(4 ps) are also generated to demultiplex 160-GBaud signals to 40-GBaud signals.Error-free performance is achieved with 2.4-dB power penalty in the worst case.     

First-Principles Calculations of Electronic Structures of New Ⅲ-Ⅴ Semiconductors： BxGa1-xAs and TlxGa1-xAs alloys

We investigate the electronic structures of new semiconductor alloys BxGa1-xAs and TlxGa1-xAs, employing first-principles calculations within the density-functional theory and the generalized gradient approximation. The calculation results indicate that alloying a small TI content with GaAs will produce larger modifications of the band structures compared to B. A careful investigation of the internal lattice structure relaxation shows that significant bond-length relaxations takes place in both the alloys, and it turns out that difference between the band-gap bowing behaviours for B and TI stems from the different impact of atomic relaxation on the electronic structure. The relaxed structure yields electronic-structure results, which are in good agreement with the experimental data. Finally, a comparison of formation enthalpies indicates that the production Tlx Ga1-xAs with TI concentration of at least 8% is possible.     

Excitation of Propagating Plasmons in Semi-Infinite Graphene Layer by Free Space Photons

By investigating the diffraction of plane waves by a semi-infinite solution for propagating surface plasmons in graphene, which can be excited graphene edge. The theoretical results are confirmed by numerical simulations. excite propagating surface plasmons in graphene where the graphene edge plays graphene layer, we present a rigorous by incident plane waves through the Our results reveal a convenient way to an important role.     

A broadband self-powered UV photodetector of aβ-Ga2O3/γ-CuI p–n junction

The symmetric Ti/Au bi-layer point electrodes have been successfully patterned on theβ-Ga;O;films which are prepared by metal–organic chemical vapor deposition(MOCVD)and theγ-Cu I films which are prepared by spin-coating.The fabricated heterojunction has a large open circuit voltage(Voc)of 0.69 V,desired for achieving self-powered operation of a photodetector.Irradiated by 254-nm ultraviolet(UV)light,when the bias voltage is-5 V,the dark current(Idark)of the device is 0.47 p A,the photocurrent(Iphoto)is-50.93 n A,and the photo-to-dark current ratio(Iphoto/Idark)reaches about 1.08×10;.The device has a stable and fast response speed in different wavelengths,the rise time(τr)and decay time(τd)are 0.762 s and 1.741 s under 254-nm UV light illumination,respectively.While theτr andτd are 10.709 s and7.241 s under 365-nm UV light illumination,respectively.The time-dependent(I–t)response(photocurrent in the order of10-10 A)can be clearly distinguished at a small light intensity of 1μW·cm;.The internal physical mechanism affecting the device performances is discussed by the band diagram and charge carrier transfer theory.     

虚拟声技术及其应用(上)

本文综述了虚拟声技术及其应用。在简单回顾了有关虚拟声的心理声学基础后，论述和分析了耳机和扬声器重发虚拟声的基本原理和基本的缺陷，总结了近年所提出的虚拟声的改进方法，最后探讨了虚拟声在科学研究、工程技术和消费电子领域的各种应用。     

Security analysis of a spatiotemporal-chaos-based cryptosystem

An S-box modified one-way coupled map lattice is applied as a chaotic cryptograph. The security of the system is evaluated from various attacks currently used, including those based on error function analysis, statistical property analysis, and known-plaintext and chosen-ciphertext analytical computations. It is found that none of the above attacks can be better than the brute force attack of which the cost is exhaustively quantitated by the key number in the key space. Also, the system has fairly fast encryption (decryption) speed, and has extremely long period for finite-precision computer realization of chaos. It is thus argued that this chaotic cryptosystem can be a hopeful candidate for realistic service of secure communications.     

Design of a polarization splitter for an ultra-broadband dual-core photonic crystal fiber

A novel ultra-broadband polarization splitter based on a dual-core photonic crystal fiber (DC-PCF) is designed. The full-vector finite element method and coupled-mode theory are employed to investigate the characteristics of the polarization splitter. According to the numerical results, a graphene-filled layer not only broadens the working bandwidth but also reduces the size of the polarization splitter. Furthermore, the fluorine-doped region and the germanium-doped region can broaden the bandwidth. Also, the 4.78 mm long polarization splitter can achieve an extinction ratio of -98.6 dB at a wavelength of 1550 nm. When extinction ratio is less than -20 dB, the range of the wavelength is 1027 nm-1723 nm with a bandwidth of 696 nm. Overall, the polarization splitter can be applied to all-optical network communication systems in the infrared and near-infrared wavelength range.