Theoretical discussion of the scanning tunneling microscope applied to a semiconductor surface

A free-electron model that we recently developed for a metal-metal microscope is extended to the case of a semiconducting sample. The probe, biased positive with respect to the sample, is taken to be a free-electron metal in the shape of a plane with a hemispherical projection. The sample, its surface being a parallel plane, is assumed to have spherical energy bands. The penetration probability is assumed to be the WKB result along the central axis using a potential energy which includes multiple image effects. We calculate current versus voltage curves at several electrode spacings for a tungsten/silicon combination.     

茚三酮分光光度法测定头孢克洛

研究了头孢克洛与茚三酮之间的显色反应,确定了反应条件,建立了一种简便而灵敏的测定头孢克洛的分光光度法.实验表明,头孢克洛与茚三酮在pH为5.4的水溶液中,沸水浴1h可以反应完全,产物的最大吸收波长λmax=565nm,表观摩尔吸光系数为4.53×103L·mol-1·cm-1.头孢克洛质量浓度在10-90mg·L-1范围内服从比耳定律,相关系数为0.9993,测定结果的相对标准偏差为1.16％(n=6),回收率在99.0％以上.本方法用于测定制剂中头孢克洛的含量结果与药典法相符.     

The Si,Ge, Sn,Pb doped (6,3) Chiral single-walled carbon nanotubes: A computational study

Electronic structure properties including bond lengths, bond angles, dipole moments (μ), energies, band gaps, NMR parameters of the isotropic and anisotropic chemical shielding parameters for the sites of various atoms were calculated using the density functional theory for Si, Ge, Sn, Pb doped (6,3) Chiral single-walled carbon nanotubes (SWCNTs). The calculations indicated that average bond lengths were as: Pb3C>Sn3C>Ge3C>Si3C>C3C. The dipole moments for Si, Ge, Sn, Pb doped (6,3) Chiral single-walled carbon nanotubes structures show fairly large changes with respect to the pristine model.     

Robust stability analysis for Markovian jumping stochastic neural networks with mode-dependent time-varying interval delay and multiplicative noise

This paper is concerned with the problem of robust stability for a class of Markovian jumping stochastic neural networks (MJSNNs) subject to mode-dependent time-varying interval delay and state-multiplicative noise. Based on the Lyapunov--Krasovskii functional and a stochastic analysis approach, some new delay-dependent sufficient conditions are obtained in the linear matrix inequality (LMI) format such that delayed MJSNNs are globally asymptotically stable in the mean-square sense for all admissible uncertainties. An important feature of the results is that the stability criteria are dependent on not only the lower bound and upper bound of delay for all modes but also the covariance matrix consisting of the correlation coefficient. Numerical examples are given to illustrate the effectiveness.     

Effect of ion velocity on SHI-induced mixing in Ti/Bi system

Energetic ion beams are proving to be versatile tools for modification and depth profiling of materials. The energy and ion species are the deciding factor in the ion-beam-induced materials modification. Among the various parameters such as electronic energy loss, fluence and heat of mixing, velocity of the ions used for irradiation plays an important role in mixing at the interface. The present study is carried out to find the effect of the velocity of swift heavy ions on interface mixing of a Ti/Bi bilayer system. Ti/Bi/C was deposited on Si substrate at room temperature by an electron gun in a high-vacuum deposition system. Carbon layer is deposited on top to avoid oxidation of the samples. Eighty mega electron volts Au ions and 100?MeV Ag ions with same value of S_e for Ti are used for the irradiation of samples at the fluences 1?×?10¹³–1?×?10¹⁴ ions/cm². Different techniques like Rutherford backscattering spectroscopy, atomic force microscopy and grazing incidence X-ray diffraction were used to characterize the pristine and irradiated samples. The mixing effect is explained in the framework of the thermal spike model. It has been found that the mixing rate is higher for low-velocity Au ions in comparison to high-velocity Ag ions. The result could be explained as due to less energy deposition in thermal spike by high-velocity ions.     

Phosphorescence of naphthalene and related compounds in fluid media: excimer phosphorescence or phosphorescence from a biacetyl-like impurity?

Molecular excimer phosphorescence observed in fluid media for naphthalene and l,n-di-α-naphthylalkanes has recently been attributed to the sensitized phosphorescence of biacetyl-like impurities. While there is remarkable spectral similarity between the two emissions, experiments in this laboratory indicate that the assignment of the emission to the phosphorescence of excimers is correct.