硫化砷非晶态波导光阻断效应的机理研究

在实验研究了As₂S₈和掺杂As₂S₈薄膜波导光阻断效应的基础上,讨论了反常电子组态的形成机理和转移机理,提出了光阻断效应切断过程和回复过程的动力学模型,数值分析结果与实验数据十分符合,理论预期与实验现象一致,表明该模型抓住了光阻断效应的基本特征,揭示了过程本质,反映了实验现象的内在机理. 关键词： 光波导技术 硫属化合物玻璃 光阻断效应 动力学模型     

Influence of cesium on the stability of a GaAs photocathode

The stability of a reflection-mode GaAs photocathode has been investigated by monitoring the photocurrent and the spectral response at room temperature.We observe the photocurrent of the cathode decaying with time in the vacuum system under the action of Cs current,and find that the Cs atoms residing in the vacuum system are helpful in prolonging the life of the cathode.We examine the evolution and analyse the influence of the barrier on the spectral response of the cathode.Our results support the double dipolar model for the explanation of the negative electron affinity effect.     

Local leakage current behaviours of BiFeO3 films

The leakage current behaviours of polycrystalline BiFeO₃ thin films are investigated by using both conductive atomic force microscopy and current-voltage characteristic measurements. The local charge transport pathways are found to be located mainly at the grain boundaries of the films. The leakage current density can be tuned by changing the post-annealing temperature, the annealing time, the bias voltage and the light illumination, which can be used to improve the performances of the ferroelectric devices based on the BiFeO₃ films. A possible leakage mechanism is proposed to interpret the charge transports in the polycrystalline BiFeO₃ films.     

Sr0.6Ba0.2Ca0.2Al2O4 ∶Eu,Dy的制备与长余辉发光性能研究

采用高温固相法制备了Ca,Ba共掺的Sr_0.6Ba_0.2Ca_0.2Al₂O₄ ∶Eu²⁺_0.01, Dy³⁺_0.02和单掺Ba的Sr_0.6Ba_0.4Al₂O₄ ∶Eu²⁺_0.01, 关键词： 长余辉 铝酸锶 稀土掺杂 陷阱能级     

Bias dependence of a deep submicron NMOSFET response to total dose irradiation

Deep submicron n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with shallow trench isolation (STI) are exposed to ionizing dose radiation under different bias conditions.The total ionizing dose radiation induced subthreshold leakage current increase and the hump effect under four different irradiation bias conditions including the worst case (ON bias) for the transistors are discussed.The high electric fields at the corners are partly responsible for the subthreshold hump effect.Charge trapped in the isolation oxide,particularly at the Si/SiO 2 interface along the sidewalls of the trench oxide creates a leakage path,which becomes a dominant contributor to the offstate drain-to-source leakage current in the NMOSFET.Non-uniform charge distribution is introduced into a threedimensional (3D) simulation.Good agreement between experimental and simulation results is demonstrated.We find that the electric field distribution along with the STI sidewall is important for the radiation effect under different bias conditions.     

Photoluminescence characteristics of ZnTiO3: Bi nanocrystals

The photoluminescence properties of the Bi³⁺ in sol-gel derived ZnTiO₃ nanocrystals have been investigated. An ultra-violet emission at 360 nm and a visible emission band at 506 nm have been observed, originating from two kinds of emission centers. The former is ascribed to the ³P₁-¹S₀ transition of Bi³⁺ and the latter to the recombination of the electrons with the photo-generated holes trapped in the zinc vacancies. In all cases the latter contribution is predominant.     

激光限制结晶技术制备nc-Si/SiO2多层膜

在等离子体增强化学气相淀积系统中，采用aSi:H层淀积和原位等离子体氧化相结合的逐层生长技术制备了aSi:H/SiO_2多层膜.在激光诱导限制结晶原理基础上，使用KrF准分子脉冲激光为辐照源，对aSi:H/SiO_2多层膜进行辐照，使纳米级厚度的aSi:H子层晶化.Raman散射谱和电子衍射谱的结果表明，经过激光辐照后纳米Si颗粒在原始的aSi:H子层内形成，晶粒尺寸可以根据aSi:H层的厚度精确控制.还研究了样品的光致发光（PL）特性以及激光辐照能量密度对PL性质的影响. 关键词： 脉冲激光 多层膜 限制结晶     

分子晶体的高压Raman光谱及结构相变

 本文综合我们从NH₃F（氟化胺）、HCCl₃（氯仿）、HCBr₃（溴仿）、S₈（硫）和C₃N₆H₆（三聚氰胺）等分子晶体获得的高压Raman光谱数据，讨论了分子晶体Raman光谱的谱带强度，频率位移，晶场劈裂和Grüneisen常数等对压力的依赖关系。总结了分子晶体压致结构相变的光谱证据和高压新相结构确定的几种方法。     

Electron-electron interaction in strong electromagnetic fields: the two-electron contribution to the ground-state energy in He-like uranium

Radiative recombination transitions into the ground state of cooled bare and hydrogenlike uranium ions were measured at the storage ring ESR. By comparing the corresponding x-ray centroid energies, this technique allows for a direct measurement of the electron-electron contribution to the ionization potential in the heaviest He-like ions. For the two-electron contribution to the ionization potential of He-like uranium we obtain a value of 2248+/-9 eV. This represents the most accurate determination of two-electron effects in the domain of high-Z He-like ions, and the accuracy reaches already the size of the specific two-electron radiative QED corrections.     

Magnetocaloric effect in ErCo2 compound

The ErCo2 compound is prepared by arc-melting and its entropy changes are calculated using Maxwell relation. Its entropy change reaches 38 J/（kg·K） and its refrigerant capacity achieves 291 J/kg at 0-5 T. The mean field approximation is used to calculate the magnetic entropy of ErCo2 compound. Results estimated by using the Maxwell relation deviate from mean field approximation calculations in ferrimagnetic state; however, the data obtained by the two ways are consistent in the vicinity of phase transition or at higher temperatures. This indicates that entropy changes are mainly derived from magnetic degree of freedom, and the lattice has almost no contribution to the entropy change in the vicinity of phase transition but its influence is obvious in the ferrimagnetic state below TC.