Recent progress of computational investigation on anode materials in Li ion batteries

Computations have been widely used to explore new Li ion battery materials because of its remarkable advantages. In this review, we summarize the recent progress on computational investigation on anode materials in Li ion batteries. By introducing the computational studies on Li storage capability in carbon nanotubes, graphene, alloys and oxides, we reveal that computations have successfully addressed many fundamental problems and are powerful tools to understand and design new anode materials for Li ion batteries.     

La0.67Ca0.33MnO3/NdGaO3(001)薄膜中外延应变诱导的各向异性磁阻效应

本文使用脉冲激光沉积方法在正交的NdGaO3(001)衬底上外延生长了La0.67Cao.33MnO3薄膜.退火后,由于外延应变引起薄膜正交畸变增强,薄膜在低于250K的整个温度区间都出现了铁磁金属态和反铁磁绝缘态的相分离和相竞争.这两相的竞争强烈依赖于磁场相对晶轴的方向,由此导致存在于很宽温度范围内的低场各向异性磁阻...     

量子纠缠消相干对确定型远程制备的影响

研究了两种典型的量子纠缠消相干现象对确定型量子态远程制备方案的影响.首先对该确定型远程制备方案进行了分析,得到该方案确定性和比特消耗情况; 然后通过分析制备过程中纠缠消相干现象对系统的影响得出: 在极化消相干过程中,该系统保真度与目标量子比特在Bloch球上的经度选择无关,仅与目标比特的纬度和消相干的大小有关;在相位消相干中,该系统的保真度不会受到消相干的影响,仅与目标量子态的纬度相关. 关键词： 远程制备 纠缠消相干 通信消耗 保真度     

一类3D混沌系统的异宿轨道和backstepping控制

基于异宿轨道Shilnikov准则,分析了一类三维自治微分系统异宿环的存在性,并证明了该系统具有Smale马蹄意义的混沌.然后对系统的分岔,Lyapunov指数,Poincare映射进行了数值分析,同时利用自适应反步控制方法,对含有三个未知参数的系统给出了一种控制算法.最后通过数值示例进行仿真,对文中论述进行了验证. 关键词： 异宿环 自适应反步 Shilnikov准则 Poincare映射     

用于激光雷达的相干合成光束研究

提高激光雷达对空间小目标探测能力的重要手段是增大发射到目标上的光强,激光相干合成是在目标上获得较大光强的有效途径.为了评价相干光束在目标上的合成效果,引入了适合空间小目标探测的相干合成效果评价参数(合成效果因子),在此基础上讨论了光束相干合成效果的影响因素.研究表明: 合成效果因子随合成光束束腰间距的增大呈周期振荡变化,振荡幅度逐渐减小;达到理想合成效果需要的光束传输距离随光束间距的增大而增加,这对设计相干合成系统光束束腰间距具有参考意义.同时,还研究了光束的相位控制精度与合成效果之间的关系. 结果表明:当相位控制精度达到π/4时,合成效果可以达到理想效果的80%;当相位控制精度为π/2时,合成效果降为理想效果的50%.研究还表明,激光偏振方向不平行对合成效果的影响不明显. 关键词： 相干合成 激光雷达 合成效果     

The 2-D growth of gold on single-layer graphene/Ru(0001): Enhancement of CO adsorption

The growth and morphology of two-dimensional (2-D) gold islands on a single-layer graphene supported on Ru(0001) have been studied by scanning tunneling microscopy (STM). Our findings show that gold exhibits 2-D structures up to a gold dosage of 0.75 equivalent monolayers, and that these 2-D gold islands are thermally stable at room temperature. Parallel polarization modulation infrared reflection absorption spectroscopic (PM-IRAS) and high resolution electron energy loss spectroscopic (HREELS) studies indicate that carbon monoxide (CO) adsorbs on these 2-D gold islands at 85 K, showing a characteristic CO stretching feature at 2095 cm^? 1 for a saturation coverage of CO. The red shift of the CO stretching frequency compared to that on charge neutral gold is consistent with electron transfer from graphene to gold, i.e., an electron-rich gold overlayer. Preliminary data obtained by dosing molecular oxygen onto this CO pre-covered surface suggest that the 2-D gold islands catalyze the oxidation of CO.     

Domain structure and optical property of epitaxial indium oxide film deposited on MgO(100) substrate

Indium oxide (In₂O₃) film has been deposited on MgO(100) substrate at 600 °C by metalorganic chemical vapor deposition (MOCVD). The crystal structure and epitaxial relationship of the sample were examined by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). The results showed a clear epitaxial relationship of In₂O₃(111)||MgO(100) with In₂O₃[011?]||MgO<072> or In₂O₃[01$\overline{1}$]||MgO<011>. A multiple domain structure was found inside the In₂O₃ film and a theoretical model clarifying the geometrical relationships between each domain and the substrate has been proposed. Scanning electron microscopy (SEM) micrograph showed that the main surface features were triangle-shaped grains on the film. The absolute average transmittance of the obtained film in the visible range was over 93%.     

The effect of Co ion implantation on Ge1−xMnx films

Ge_1−xMn_x (x = 0, 0.013, 0.0226, 0.0339, 0.0565, 0.0678, 0.0904, 0.113) films prepared by magnetron sputtering at 773 K had a Ge cubic structure except for x = 0.1130. Co ion implantation into these films can effectively prevent the formation of a second phase. Both single-doped and co-doped samples were ferromagnetic at room temperature. The d-d exchange interaction between the interstitial Mn (MnT) and the substituted Mn (Mn_Ge) resulted in ferromagnetism in the sputtered films. Since Co ion implantation destroyed the Mn_T-Mn_Ge-Mn_T complex, the saturated magnetization decreased. Hall measurements revealed that the Co ion implanted films were n-type semiconductors, and the anomalous Hall Effect (AHE) suggested the ferromagnetism was carrier-mediated in the implanted films.     

一种测量热电材料塞贝克系数的新方法

本文提出了一种新颖、可靠的测量微纳米尺度热电转换材料塞贝克系数的2ω自加热法.给被测样品通一频率为ω的交变电流,焦耳效应会在样品上产生一个频率为2ω的温度振荡.对于热电材料,由于塞贝克效应,将会产生频率为2ω的塞贝克电压.获取2ω电压信号,同时理论求解得到2ω的温度振荡量,将可得到被测热电材料的塞贝克系数.通过直径为2...