Fe_3Al的抗高温氧化和耐热腐蚀性能

在７００℃与８５０℃的高温下，Ｆｅ＿３Ａｌ金属间化合物表面形成了Ａｌ＿２Ｏ＿３保护膜，使其抗氧化性能远优于不妨钢，２％Ｃｒ（原子百分比）加入Ｆｅ＿３Ａｌ会导致氧化过程初期氧化速率的增高，在熔融的硫酸盐和高压锅炉的烟气中，Ｆｅ＿３Ａｌ的耐热腐蚀性能优于高温合金ＧＨ１３２．     

~n中有界域上全纯函数的第Ⅰ型 C-F公式

本文得到Ｃｎ中有界域上全纯函数的一种其积分密度函数含有全纯函数导数的 Ｃａｕｃｈｙ－Ｆａｎｔａｐｐｉ　　公式，称之为第Ⅰ型 Ｃ－Ｆ 公式，利用这个公式，通过适当选择其中的向量函数，可以得到许多区域上全纯函数相应的第Ⅰ型积分表示式．     

Abnormal dielectric characteristics of PMN-32%PT single crystal under dc bias

It has been reported that the single crystal of relaxor ferroelectrics (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-xPT) with the compositions near the morphotropic phase boundary (MPB, 0.28相似文献   

一些特殊树的对偶带宽

图G的对偶带宽是指图G中相邻两点最小标号差的最大值。确定了一些特殊树的对偶带宽，主要结果如下：(1)如果树T有n个顶点，并且其最大度△(T)不小于[n/2]，那么树T的对偶带宽等于n一△(T)的充要条件为T是双层星且其内星的中心为最大度顶点；(2)完全二叉树T2,k的对偶带宽等于2^k-1；(3)等高单毛虫树Pm,n的对偶带宽为[mn/2]。     

涉及到两个高维单形的分式不等式

Janic R.R是一个关于三角形的边长和旁切园半径的分式不等式，文中对两个高维单形给出可类似的分式不等式的正向形式和逆向形式。     

小型LED点阵显示屏实验硬件制作

LED显示屏现在市面上非常流行,本文从实验块的硬件电路出发,讨论了LED点阵显示屏硬件电路的制作,并对实验块进行了成功运行。     

Low-threshold, high-efficiency, high-repetition-rate optical parametric generator based on periodically poled LiNbO3

We report a high-repetition-rate optical parametric generator (OPG) with a periodically poled lithium niobate (PPLN) crystal pumped by an acousto-optically Q-switched CW-diode-end-pumped Nd:YVO_4 laser. For the maximum 1064nm pump power of 970mW, the maximum conversion efficiency is 32.9% under the conditions of 250℃, 1064nm pulse repetition rate of 22.6kHz and pulse width of 12ns, and the PPLN OPG threshold in the collinear case is less than 23.7μJ. The output power increases with the increase of the crystal temperature. The 1485－1553nm signal wave and 3383－3754nm idler wave are obtained by changing the temperature and the angle of the PPLN crystal.     

从小说《围城》看中国文化的面子观

面子及对面子的需求在中西文化中具有不同的文化特征。通过对《围城》文本的分析，可以检验布朗和莱文森·的面子理论在中国文化中的价值与理论解释力，从而阐释中国文化中面子的特殊含义与礼貌表现。     

白光干涉条纹变密的原因探讨

讨论了在测定透明介质折射率的过程中彩色条纹变密的现象，并在其基础上分析其成因：一是由于媒质折射率加大；二是由于平形板介质平行度不好造成楔形的倾角变大，最后在实验中验证了理论结果。     

Reduction of dislocation density and improvement of optical quality in ZnO layers by MgO-buffer annealing

Optical properties of ZnO thin films with/without MgO-buffer annealing were investigated by low and room temperature photoluminescence measurements. The ZnO films were grown on c-sapphire substrates by plasma-assisted molecular-beam epitaxy employing a thin MgO-buffer layer. Dislocation density of ZnO layer was reduced from 5.3 × 10⁹ to 1.9 × 10⁹ cm⁻² by annealing MgO-buffer prior to the growth of ZnO. The intensity of free exciton emission from the sample with MgO-buffer annealing was almost twice of that from the sample without annealing, while the deep level emission from the sample with MgO-buffer annealing was about 1/3 of that without annealing. The MgO-buffer annealing improves optical quality of overgrown ZnO films.