The quantum states are presented in these processions of fabricating poly-Si films. Amorphous silicon films prepared by PECVD has been crystallized by conventional furnace annealing (FA) and rapid thermal annealing (RTA), respectively. It is found that the thin films grain size present quantum states with the increasing of the gas flow ratios of SiH4, H2 mixture, substrate temperatures, frequency power, annealing temperature and time. 相似文献
The solar wind almost disappeared on May 11, 1999: the solar wind plasma density and dynamic pressure were less than 1cm−3 and 0.1 nPa respectively, while the interplanetary magnetic field was northward. The polar ionospheric data observed by the multi-instruments at Zhongshan Station in Antarctica on such special event day was compared with those of the control day (May 14). It was shown that geomagnetic activity was very quiet on May 11 at Zhongshan. The magnetic pulsation, which usually occurred at about magnetic noon, did not appear. The ionosphere was steady and stratified, and the F2 layer spread very little. The critical frequency of day-side F2 layer, f0F2, was larger than that of control day, and the peak of f0F2 appeared 2 hours earlier. The ionospheric drift velocity was less than usual. There were intensive auroral Es appearing at magnetic noon. All this indicates that the polar ionosphere was extremely quiet and geomagnetic field was much more dipolar on May 11. There were some signatures of auroral substorm before midnight, such as the negative deviation of the geomagnetic H component, accompanied with auroral Es and weak Pc3 pulsation.
This paper presents an instance of using FD-TD method to analyze the aperture field of circular groove guide horn antenna. This process is one part of a hybrid method to solve the radiation field of aperture antenna. To verify the calculated aperture field the radiation pattern is computed from it and compared with the measured one. Good agreement is reached. 相似文献
CeOs4Sb12晶体中由于导电电子与Ce3+ 4f1电子之间存在c-f杂化作用导致费米面附近存在能量间隙.这种c-f近藤相互作用和能量间隙是理解CeOs4Sb12物理性质,如近藤绝缘体行为、Ce3+磁矩在低温下猝灭以及重费米性等电、磁性质的关键.当用LAM-D中子谱仪对粉末CeOs4Sb12进行测量时,可以得到不同温度下CeOs4Sb12的非弹性中子散射谱.结果表明CeOs4Sb12中存在近藤相互作用,其作用强度为3.1 meV,证实了CeOs4Sb12为近藤绝缘体.中子测量得出CeOs4Sb12德拜温度为317 K. 相似文献