SiO2-羟基表面上金属原子的第一性原理研究

采用第一性原理方法研究了SiO2-羟基表面上几种金属原子的吸附性质,发现In和Ga在SiO2-羟基表面上的结合很弱,而Fe,Co,Ni在该表面上与Si,O形成强的化学键.等势能面和扩散势垒计算表明In(Ga)的扩散激活能只有0.1-0.3 eV,表明这两种原子容易在表面上扩散.这些结果可以定性地解释纳米合成中的一些实验现象.     

(111)取向(Pb,La)TiO3铁电薄膜中90°纳米带状畴与热释电性能的研究

采用射频磁控溅射技术在Pt/Ti/SiO2/Si(100)衬底上生长了掺镧钛酸铅(PLT)铁电薄膜.用X射线衍射技术(XRD)研究了PLT薄膜结晶性能,结果表明PLT薄膜为(111)择优取向钙钛矿相织构.使用原子力显微镜(AFM)和压电响应力显微镜(PFM)分别观察了PLT薄膜的表面形貌和对应区域的电畴结构.PFM观察显示PLT薄膜中存在90°纳米带状畴,电畴的极化为首尾相接的低能量的排列方式,带状畴的宽度为20-60nm.研究了PLT10铁电薄膜的制备条件与性能之间的关系.发现在优化条件下制备的PLT10铁电薄膜的介电常数εr为365、介电损耗tgδ为0.02,热释电系数γ为2.18×10-8C·(cm2·K)-1,可以满足制备非制冷红外探测器的需要.     

多目标半定规划的加权中心路径法

对于线性型多目标半定规划问题，引进加权中心路径的概念，并利用单目标半定规划的中心路径法，提出了求解多目标半定规划问题的加权中心路径法，先得型对一个叔向量的有效解，然后在此基础上，提出了通过一次迭代得到对应一定范围内其他任意权向量的有效解的一步修正方法．     

DIELECTRIC EFFECT ON THE RADIO-FREQUENCY CHARACTERISTICS OF A RECTANGULAR WAVEGUIDE GRATING TRAVELING WAVE TUBE

A new type of partial-dielectric-loaded rectangular waveguide grating slow-wave structure (SWS) for millimeter wave traveling wave tube (TWT) is presented in this paper. The radio-frequency characteristics including the dispersion properties, the longitudinal electric field distribution and the beam-wave coupling impedance of this structure are analyzed. The results show that the dispersion of the rectangular waveguide grating circuit is weakened, the phase velocity is reduced and the position of the maximum E _z is basically invariant after partially filling the dielectric materials in the rectangular waveguide grating SWS. Although the coupling impedance decreases a little, it still keeps above 40 Ω.     

Strong Vector Equilibrium Problems

In this paper, the existence of the solution for strong vector equilibrium problems is studied by using the separation theorem for convex sets. The arc-wise connectedness and the closedness of the strong solution set for vector equilibrium problems are discussed; and a necessary and sufficient condition for the strong solution is obtained.     

Polarization-dependent carrier dynamics in a passive InAs/InP quantum dot waveguide

We investigate carrier dynamics in a passive InAs/InP quantum dot (QD) waveguide using 255 fs optical pulses at a central wavelength of 1568 nm. We observe strong anisotropy of absorption saturation for different polarizations. Pump-probe measurements indicate the presence of carrier relaxation dynamics on a timescale in the order of tens of picoseconds due to cascaded relaxation of carriers generated by two-photon absorption (TPA) from the bulk region to the QDs via the wetting layer. These relaxation timescales are much longer than in QD amplifiers. Our observations are supported by a rate-equation model which includes TPA, showing good agreement with the pump-probe measurements.     

Influence of focusing depth on the microfabrication of waveguides inside silica glass by femtosecond laser direct writing

We studied the influence of focusing depth on the index change threshold and damage threshold of silica glass irradiated by a focused 120 fs laser beam. Both thresholds increased with the focusing depth. The aspect ratio of the waveguide cross section can be selected by changing the focusing depth. A 5 mm long waveguide was written at the depth of 2100 μm, which was single mode at 632.8 nm and exhibited propagation loss of 0.56 dB/cm. The refractive index change was calculated to be ∼2.47×10^-3. The influence of the focusing depth should be considered in multi-layer devices as shown in the fabrication of a 3×3 waveguide array. PACS 42.62.-b; 42.82.Et; 81.05.Kf     

三峡钢丝绳卷扬全平衡式垂直升船机机电耦合系统动力学仿真

建立三峡钢丝绳卷扬全平衡式垂直式升船机的双闭环调速电力拖动控制系统的模型和升船机各子结构的动力学模型，并通过刚性子结构法形成了整体动力学模型，运用MATLAB中的SIMULINK模块，将电力拖动控制系统与整体动力学模型耦合，采用Wilson-θ法求解瞬态响,对误载水深为＋20cm，承船厢低点位置上向上启动运动的正常工况进行了仿真分析。     

黄磷废水处理系统中氰降解菌的筛选

首次对含有氰化物的黄磷废水进行了氰降解菌筛选优化,共得耐氰菌20株,其中有9株的降氰率在90％以上,且AB2001003菌株降氰率在97.1％以上.该菌能在72 h内使含CN~-50mg·L~(-1)的黄磷废水降至0.5 mg·L~(-1)以下,达到国家一级排放标准.该菌的最佳生长pH7.7,最佳温29℃.     

c轴定向氮化铝薄膜的制备

利用电子回旋共振 (ECR)微波增强化学气相沉积法 (PECVD)并使用氮气 (N2 ) ,氩气 (Ar)和AlCl3蒸气作为气源在直径为 6 .35cm的 (10 0 )单晶硅片表面制备了c轴定向氮化铝 (AlN)薄膜 ,并使用X射线衍射仪及其X射线特征能谱和扫描电镜 (SEM)分析了薄膜特征 ,研究了微波功率、基板温度和N2 流量对薄膜c轴定向的影响 ,得到了c轴偏差角小于 5°的高质量大面积AlN薄膜。