生物分子拉曼散射测定过程中荧光背景的抑制

拉曼共焦技术、表面拉曼增强技术以及降低入射激光强度的方法，被运用于SOD、DNA等生物分子拉曼散身实验中，以抑制其荧光背景，改善光谱质量。     

关于高阶中立型偏微分方程系统解的振动性

近年来,由于偏泛函微分方程(组)理论在人口动力学,生物遗传工程和化学反应过程等领域中有广泛的应用,因而很多学者在偏泛函微分方程(组)解的振动性理论的研究方面做了大量工作,取得了许多成果.本文将研究一类较广泛的高阶中立型偏微分方程组     

直径不超过4的树的割宽

§ 1　IntroductionThe cutwidth problem for graphs,as well as a class of optimal labeling and embed-ding problems,have significant applications in VLSI designs,network communicationsand other areas (see [2 ] ) .We shall follow the graph-theoretic terminology and notation of [1 ] .Let G=(V,E)be a simple graph with vertex set V,| V| =n,and edge set E.A labeling of G is a bijec-tion f:V→ { 1 ,2 ,...,n} ,which can by regarded as an embedding of G into a path Pn.Fora given labeling f of G,th…     

Liminf results on the increments of an (N,d)-Gaussian process

We establish some liminf theorems on the increments of a (N,d)-Gaussian process with the usual Euclidean norm, via estimating upper bounds of large deviation probabilities on the suprema of the (N,d)-Gaussian process. This revised version was published online in June 2006 with corrections to the Cover Date.     

证券价格按几何布朗运动变化的微观解释

金融市场研究中经常不加解释地假设证券价格按几何布朗运动变化 .本文通过假定投资者要求来自证券的期望收益率与证券价格无关 ,在理想市场的前提条件下 ,对证券价格运动将遵循有漂移率的几何布朗运动给予严格的证明 .     

蒙山脆枣与枣及酸枣亲缘关系的研究

以蒙山脆枣及山东省内的9个枣品种和32个酸枣类型(株系)为试材,采用形态学分析和RAPD分析,对蒙山脆枣与枣及酸枣的亲缘关系进行研究,并初步探讨了蒙山脆枣的起源及枣的演化过程。形态学性状数据主成分分析结果表明,蒙山脆枣第1主成分值为5.42,第2主成分值为0.64,介于枣品种和酸枣类型之间,地位较为特殊。对形态学性状数据聚类,结果表明,蒙山脆枣先与酸枣1号在6.40阈值处聚为一类,再与大枣品种的聚类群在11.75阈值处聚为1类之后,才与其它酸枣类型的聚类群聚为一类,显示出蒙山脆枣的分类地位介于枣和酸枣之间。进一步的RAPD分析结果表明,蒙山脆枣与酸枣亲缘关系较近。蒙山脆枣果实长2cm左右,外果皮较薄,中果皮较厚,平均单果重为3.64g,叶片纵横径为6.93cm×3.08cm,形态学性状与枣接近,推测蒙山脆枣可能为供试酸枣类型与枣品种的中间类型。     

论数学作文训练在教学中的作用

阐述了数学作文训练对巩固数学知识基础、培育数学思想、优化数学思维品质、培养和发展数学能力有明显的作用,它是提高数学素质的一种新的教学模式,并且对培养和提高学生的整体素质也有积极的影响.     

桥头跳车的成因及处理方法

桥头跳车会增加行车风险并且会大大增加每年的养护费用．本文作者根据多年的养护管理及施工经验，对桥头跳车的成因从设计、施工及运营使用几方面进行了分析并提出了几种处理方法，尤其是对桥头搭板和土工格栅网两种目前工程界常用方法从设计机理到施工实践进行了比较详细的论述，同时对设计机理方面引入了相应的数学模型．     

Study of the pulsed laser vapor doping of Si(1 0 0) with KrF excimer laser and BCl3 gas

The properties of pulsed laser vapor doping on p-Si(1 0 0) with a KrF (248 nm) excimer pulsed laser (248 nm) and BCl₃ gas are reported in this paper. The doped samples are characterized by the resistance measured using a four-probe method, since the sheet resistance changes with the carrier concentration of the sample. The doping effects with the variation of laser energy density, pulse number, and the pressure of BCl₃ were investigated in terms of the sheet resistance. In this way, the optimized parameters were obtained and used for the positive heavy doping on p-Si(1 0 0) and p-Si(1 1 1). Then, using a square mesh under the above conditions, an image doping was completed. Finally, the metal–semiconductor Ohmic contacts were realized by plating Ag and Cu films on the doped surface.     

Peritectic phase growth in directionally solidified Cu-70% Sn alloy

The growth mechanism of the peritectic η phase involving the peritectic reaction and peritectic transformation in Cu-70%Sn alloy was investigated under directional solidification. The results show that a major growth mechanism in thickening of the peritectic η-layer is not the peritectic reaction but the peritectic transformation. The transformation temperature and isothermal time play crucial roles in determining the volume fraction and the thickness of the peritectic η phase. With the increase of the temperature and isothermal time, the volume fraction of the peritectic η phase increases. The regressed data show that the relationship between the thickness of η phase (Δx) and the transformation temperature (T) meets the following equation In Δx=6.5−1673 1 / T. Additionally, there exists a relationship between the thickness of the η phase (Δx) and the isothermal time (t) at the 9 mm solidification distance below the peritectic reaction interface, Δx=0.72t ^1/2, which is consistent with the theoretical model. Supported by the National Science Foundation of China (Grant No. 50395102)