硫酰胺的快速分析（Ⅱ） 

硫酰胺生产过程中副产的大量氯化铵要干扰硫酰胺的测定，采用四苯硼钠将全部氯化铵呈沉淀析出，再用次溴酸钠把滤液中的硫酰胺分解成氮气，测其体积，计算出硫酰胺的含量。对样品进行测定的结果表明，该法重现性好、准确度高、分析周期在３５ｍｉｎ内，相对误差在±１％以内。     

浅谈歧化反应及其方程式的简捷配平方法

本文总结了歧化反应的有关内容，并对其中的某些问题作了较好的解释。最后，西文给出了歧化反应方程式的简捷配平方法。     

Application of novel SIMS technique for imaging the active sites of oxygen reduction at the SOFC cathode/electrolyte interfaces

The oxygen reduction active sites were visualized around the O₂/SOFC cathode/electrolyte triple phase boundaries (TPB) by the¹⁶O/¹⁸O exchange techniques and secondary ion mass spectrometry (SIMS) analysis. The higher¹⁸O concentration is observed on the cathode top surfaces (La_0.9Sr_0.1MnO₃-mesh, Au-mesh, and Ag-porous), which suggested the promotion of oxygen adsorption and oxygen surface exchange at the cathode. The oxygen diffusion through the bulk of cathode occurred at the La_0.9Sr_0.1MnO₃-mesh and the Ag-porous cathodes, not at the Au-mesh cathode. On the YSZ surfaces after removing the cathode, the active sites for oxygen incorporation were analyzed by SIMS. The active sites for oxygen incorporation were at the La_0.9Sr_0.1MnO₃/YSZ interface as well as the TPB. On the other hand, the active sites for oxygen incorporation are limited to the TPB in the case of the Au-mesh removed YSZ surface. From the SIMS analysis, the expansion of the active sites for oxygen incorporation is less than a few μm from the TPB lines. Paper presented at the 8th EuroConference on Ionics, Carvoeiro, Algarve, Portugal, Sept. 16–22, 2001.     

过量Zn对β-Zn4Sb3热电性能影响的研究

采用真空熔融缓冷方法制备了单相β-Zn4Sb3以及含有过量Zn的β-Zn4Sb3块体热电材料.在300—700K的温度范围内测试了材料的电导率、Seebeck系数和热导率,研究了β-Zn4Sb3化合物中过量Zn的分布状态及其对材料热电性能的影响规律.结果表明：过量的Zn作为第二相较均匀的分布在β-Zn4Sb3的晶界上,随着Zn含量增加,材料电导率和热导率上升,Seebeck系数下降,Zn第二相的引入能有效提高材料的功率因子,Zn过量2at%的材料在700K时其ZT值达到1.10.     

VO2-Based Infrared Microbolometer Array

V0₂-based thin film materials on silicon substrates are fabricated by ion beam sputtering and a post-annealing which is different from the conventional fabricating method. An infrared linear microbolometer array with 128 pixels is prepared using as-deposited vanadium dioxide thin films. Optical and electrical properties for V0₂-based microbolometer array are tested.     

高分子担载卟啉稀土络合物的合成

高分子担载卟啉稀土络合物的合成王荣民，王云普，雷自强，熊键，王顺（化学系）第一作者简介王荣民，男，２８岁。１９９１年毕业于西北师范大学化学系，获理学硕士学位，现为西北师范大学化学系讲师。主要研究方向为高分子金属有机化学，已在国内外学术刊物上发表有关论...     

聚氧化乙烯介质中的掺杂硫化锌纳米晶的制备及光学性质

简述了聚氧化乙烯介质中的铽、铕、铥、钆、钇、镓、锰掺杂的硫化锌纳米晶的制备方法以及紫外吸收光谱、激发光谱和光激发发射光谱.制成的硫化锌纳米晶直径为3.0～3.5nm.     

Quantum HeisenbergS=1/2 spin glass with ferromagnetic coupling and random Dzyaloshinskii-Moriya interactions

By means of the generalized static replica symmetric spin glass theory, a quantum HeisenbergS=1/2 spin glass model with the infinite-ranged random Dzyaloshinskii-Moriya (DM) interaction and ferromagnetic coupling is investigated. The dependence of entropy, specific heat, susceptibility and the corresponding order parameters on temperature is studied numerically for different ferromagnetic interactions and fixed anisotropy. Two spin glass phases has been found including transverse and mixed spin glass phases. It has been shown that the local susceptibility exhibits double-cusp features for different ferromagnetic coupling (J ₀). Phase transition poins are found in the specific heat-temperature plane at various ferromagnetic coupling values. Additionally, the dependence of the spontaneous moment on temperature is calculated.     

装药结构对传爆药柱起爆能力的影响研究

为了适应钝感弹药对传爆序列提出的新要求,根据炸药冲击起爆理论,研究了凹球形和半球形两种新结构传爆药柱,并对两种新结构传爆药柱与普通圆柱形传爆药柱的起爆威力进行了实验对比.研究结果表明,改变传爆药柱的结构可提高其输出威力,新结构传爆药柱较普通圆柱形传爆药柱的起爆威力有明显提高.研究结果对解决钝感弹药的可靠起爆问题具有重要意义.     

适用于一般提法的埃尔米特插值多项式的差商构造公式

利用差商的非构造性定义建立了适用于一般提法的埃尔米特(Henmite)插值多项式的差商构造公式,并给出了插值余项估计。