基于CS模式的多机器人网络通信系统

首先提出了基于CS模式的多机器人通信系统的拓扑结构，并对这种通信模式的一致性响应速度特性进行了分析，然后给出了基于Visual C＋＋MFC的CS网络通信模式的程序设计方法，最后对系统进行了实验验证．研究表明，基于CS的多机器入网络通信系统，具有结构简单、一致性速度快的优点，对建立多机器人通信系统具有较大的指导意义．     

Microfabrication techniques using focused ion beams and emergent applications.

The application of focused ion beam (FIB) machining in several technologies aimed at microstructure fabrication is presented. These emergent applications include the production of micromilling tools for machining of metals and the production of microsurgical tools. An example of the use of microsurgical manipulators in a circulatory system measurement is presented. The steps needed to transform the laboratory fabrication of these tools and manipulators into a routine FIB production process are discussed. The ion milling of three-dimensional cavities by the exact solution of a mathematical model of the FIB deflection is demonstrated. A good agreement between the model calculation and the ion beam control has been obtained for parabolic and cosine cross-section features with planes of symmetry.     

Mei symmetry and Mei conserved quantity of nonholonomic systems with unilateral Chetaev type in Nielsen style

This paper studies the Mei symmetry and Mei conserved quantity for nonholonomic systems of unilateral Chetaev type in Nielsen style. The differential equations of motion of the system above are established. The definition and the criteria of Mei symmetry, loosely Mei symmetry, strictly Mei symmetry for the system are given in this paper. The existence condition and the expression of Mei conserved quantity are deduced directly by using Mei symmetry. An example is given to illustrate the application of the results.     

Effect of thermal-annealing on the magnetoresistance of manganite-based junctions

Thermal-annealing has been widely used in modulating the oxygen content of manganites. In this work, we have studied the effect of annealing on the transport properties and magnetoresistance of junctions composed of a La0.9Ca0.1MnO3＋6 film and a Nb-doped SrTiO3 substrate. We have demonstrated that the magnetoresistance of junctions is strongly dependent on the annealing conditions： Prom the junction annealed-in-air to the junction annealedin-vacuum, the magnetoresistance near 0-V bias can vary from ～-60% to N～0. A possible mechanism accounting for this phenomenon is discussed.     

Optimized transfer trajectories in the earth-moon system

Investigations of low energy transfer trajectories are important for both celestial mechanics and astronautics. Methodologies using the theories from dynamical systems are developed in recent years. This paper investigates the dynamics of the earth-moon system. Low energy transfer trajectories are solved numerically by employing a hybrid strategy： first, a genetic hide and seek method performs a search in large domain to confine the global minimum f（η） （objective function） region; then, a deterministic Nelder-Mead method is utilized to refine the minimum quickly. Some transfer trajectories of the spacecraft in the earth-moon system are successfully simulated which verify the desired efficiency and robustness of the method of this paper.     

Scheme for the implementation of 1→3 optimal phase-covariant quantum cloning in ion-trap systems

This paper proposes a scheme for the implementation of 1→ 3 optimal phase-covariant quantum cloning with trapped ions. In the present protocol, the required time for the whole procedure is short due to the resonant interaction, which is important in view of decoherence. Furthermore, the scheme is feasible based on current technologies.     

The growth temperatures dependence of optical and electrical properties of InN films

InN films grown on sapphire at different substrate temperatures from 550°C to 700°C by metalorganic chemical vapor deposition were investigated. The low-temperature GaN nucleation layer with high-temperature annealing (1100°C) was used as a buffer for main InN layer growth. X-ray diffraction and Raman scattering measurements reveal that the quality of InN films can be improved by increasing the growth temperature to 600°C. Further high substrate temperatures may promote the thermal decomposition of InN films and result in poor crystallinity and surface morphology. The photoluminescence and Hall measurements were employed to characterize the optical and electrical properties of InN films, which also indicates strong growth temperature dependence. The InN films grown at temperature of 600°C show not only a high mobility with low carrier concentration, but also a strong infrared emission band located around 0.7 eV. For a 600 nm thick InN film grown at 600°C, the Hall mobility achieves up to 938 cm²/Vs with electron concentration of 3.9 × 10¹⁸ cm⁻³. Supported by the National Basic Research Program of China (Grant No. 2006CB6049), the National Natural Science Foundation of China (Grant Nos. 6039072, 60476030 and 60421003), the Great Fund of the Ministry of Education of China (Grant No. 10416), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20050284004), and the Natural Science Foundation of Jiangsu Province of China (Grant Nos. BK2005210 and BK2006126)     

Dynamical study on charge injection and transport in a metal/polythiophene/metal structure

The dynamical process of charge injection from metal electrode to a nondegenerate polymer in a metal/polythiophene （PT）/metal structure has been investigated by using a nonadiabatic dynamic approach. It is found that the injected charges form wave packets due to the strong electron-lattice interaction in PT. We demonstrate that the dynamical formation of the wave packet sensitively depends on the strength of applied voltage, the electric field, and the contact between PT and electrode. At a strength of the electric field more than 3.0 × 10^4 V/cm, the carriers can be ejected from the PT into the right electrode. At an electric field more than 3.0 × 10^5 V/cm, the wave packet cannot form while it moves rapidly to the right PT/metal interface. It is shown that the ejected quantity of charge is noninteger.     

A potential integration method for Birkhoffian system

This paper is intended to apply the potential integration method to the differential equations of the Birkhoffian system. The method is that, for a given Birkhoffian system, its differential equations are first rewritten as 2n first-order differential equations. Secondly, the corresponding partial differential equations are obtained by potential integration method and the solution is expressed as a complete integral. Finally, the integral of the system is obtained.