二茂铁有机锡衍生物的13C,119Sn NMR研究

本文测定了几种二茂铁有机锡衍生物的¹¹⁹Sn,¹³C NMR谱。对其中几种衍生物的¹³C NMR谱进行了归属,从而进一步验证了这类化合物的结构。着重讨论了结构如化合物中取代基X的改变对¹¹⁹Sn化学位移的影响。并对结构如 类化合物N→Sn异侧配位的问题进行了讨论。     

Almost-sure path properties of fractional Brownian sheet

The almost sure sample function behavior of the vector-valued fractional Brownian sheet is investigated. In particular, the global and the local moduli of continuity of the sample functions are studied. These results give precise information about the continuity and the oscillation behavior of the sample functions.     

变参数波振器中小信号增益公式

利用微扰展开技术推导出变参数波振器的小信号增益两个近似求积表达式并将其计算结果与数值模拟结果进行了比较,二者吻合很好。利用近似解析式对小信号增益进行了初步探讨,得到了电子入射能量可低于初始谐振能,能散度允许范围受波振器设计影响以及降低锥度改变率可提高小信号增益等新结论。     

A theorem of Grünwald-type for Hermite-Fejér interpolation of higher order

In this paper we give a theorem of Grünwald-type for (0, 1,...,m-1) Hermite-Fejér interpolation (m=2, 4,...), which extends the famous result for a strongly normal system of nodes in the casem=2 given by Grünwald in [1].     

发现一种声波传入内耳的新途径

对一位先天性外耳道缺失的患者调查发现，声波传入内耳，除了正常的骨传导和气传导以外，还存在着一种口鼻—咽—咽鼓管—中耳—内耳途径．     

最小二乘解存在的充分必要条件

本文提出了当观测值的权矩阵为正定或半正定的前提下，其最小二乘解存在的充分必要条件为并以间接平差为例验证了该结论的正确性。     

An Improved S-Random Interleaver Design for Turbo Code Based on Chaos Model

A new method to design interleaver based on Henon chaos model is presented. The designed interleaver is with rather random behavior. Experimental results show that the proposed S-henon interleaver make a magnitude of im provement in bit error rate （BER） performance by 0.4 dB compared with the S-random interleaver for AWGN channel respectively. The S-henon interleaver may be adapted to 3G mobile communication systems.     

Hydroxyapatite coating on porous silicon substrate obtained by precipitation process

Hydroxyapatite Ca₁₀(PO₄)₆(OH)₂ (HAP) is known as a bioactive and biocompatible material, HAP coatings were used to improve the biocompatible of substrate by many researcher, In this work, HAP thin films on porous silicon (PS) substrates have been prepared by aqueous precipitation method with rapid thermal annealing (RTA) processes. The HAP films had been prepared under the annealing temperature ranging from 300 to 1000 °C. By the measurement of X-ray diffraction (XRD), it was found that for the crystallinity optimization, the heat-treatment at 850–950 °C for 1 h would be favorable. Atomic force microscopy (AFM) and scanning electron microscope (SEM) measurements reveal a dense and smooth surface of the HAP film, and tightly adherence of the coating on porous silicon substrate after sintered. Thus, by this method, porous silicon could be increased its bioactivity and so that could be used in the biomedical area.