Measurement of the muonic branching fractions of the narrow upsilon resonances

The decay branching fractions of the three narrow Upsilon resonances to mu(+)mu(-) have been measured by analyzing about 4.3 fb(-1) e(+)e(-) data collected with the CLEO III detector. The branching fraction B(Upsilon(1S)-->mu(+)mu(-))=(2.49+/-0.02+/-0.07)% is consistent with the current world average, but B(Upsilon(2S)-->mu(+)mu(-))=(2.03+/-0.03+/-0.08)% and B(Upsilon(3S)-->mu(+)mu(-))=(2.39+/-0.07+/-0.10)% are significantly larger than prior results. These new muonic branching fractions imply a narrower total decay width for the Upsilon(2S) and Upsilon(3S) resonances and lower other branching fractions that rely on these decays in their determination.     

Infrared Spectra of the Square Planar Rhodium(I) Complexes cis-[Rh(CO)2(pyridine) (X)] (X = Cl,Br): Isotopic Labelling Studies and Normal Coordinate Analysis

Abstract

The infrared spectra (4000 - 50 cm^?1) of the square planar rhodium(I) complexes cis-[Rh(CO)₂ (pyridine) (X)] (X = Cl, Br) and their isotopomers with pyridine-d ₅ and ¹³CO have been determined. Assignments are based on earlier studies on pyridine and its complexes and on the shifts in infrared bands which are caused by the isotopic substitutions employed. Normal coordinate analysis following the procedure of Becher and Mattes has been used to confirm the empirical assignments. The two v(RhC) bands are observed near 490 and 450 cm^?1. v(RhN) is found near 210 cm^?1 and v(RhX) occurs at 310 (X = Cl) and 235 (X = Br) cm^?1. At frequencies below 200 cm^?1, the bands are assigned to bending modes in the following sequence: δ (RhN) > δ (CRhC) > δ (RhCl) > γ (RhCl) > γ (RhN).     

Search for rare and forbidden decays D+ --> h+/- e+/- e+

Using 0.8 x 10(6) D+ D- pairs collected with the CLEO-c detector at the psi(3770) resonance, we have searched for flavor-changing neutral current and lepton-number-violating decays of D+ mesons to final states with dielectrons. We find no indication of either, obtaining 90% confidence level upper limits of B(D+ --> pi+ e+ e-) < 7.4 x 10(-6), B(D+ --> pi- e+ d+) < 3.6 x 10(-6), B(D+ --> K+ e+ e-) < 6.2 x 10(-6), and B(D+ --> K- e+ e+) < 4.5 x 10(-6).     

Improved measurement of the form factors in the decay lambda+c-->lambda + nue

Using the CLEO detector at the Cornell Electron Storage Ring, we have studied the distribution of kinematic variables in the decay lambda(+)(c)lambda--> e(+)nu(e). By performing a four-dimensional maximum likelihood fit, we determine the form factor ratio, R= f(2)/f(1) = -0.31 +/- 0.05(stat) +/- 0.04(syst), the pole mass, M(pole) = [2.21 +/- 0.08(stat) +/- 0.14(syst)] GeV/c(2), and the decay asymmetry parameter of the lambda(+)(c), alpha (lambda(c)) = -0.86 +/-0.03(stat) +/- 0.02(syst), for q(2) = 0.67 (GeV/c(2))(2). We compare the angular distributions of the lambda(+)(c) and lambda(-)(c) and find no evidence for CP violation: A(lambda(c)) = (alpha(lambda(c)) + alpha (lambda(c)))/(alpha(lambda(c))-alpha(lambda(c))) = 0.00 +/- 0.03(stat) +/- 0.01(syst) +/- 0.02, where the third error is from the uncertainty in the world average of the CP-violating parameter, A(lambda), for ppi(-).     

Study of the semileptonic charm decays D(0)-->pi(-)l(+)nu and D(0)-->K(-)l(+)nu

We investigate the decays D(0)-->pi(-)l(+)nu and D(0)-->K(-)l(+)nu, where l is e or mu, using approximately 7 fb(-1) of data collected with the CLEO III detector. We find R(0) identical with B(D(0)-->pi(-)e(+)nu)/B(D(0)-->K(-)e(+)nu)=0.082+/-0.006+/-0.005. Fits to the kinematic distributions of the data provide parameters describing the form factor of each mode. Combining the form factor results and R(0) gives |f(pi)(+)(0)|(2)|V(cd)|(2)/|f(K)(+)(0)|(2)|V(cs)|(2)=0.038(+0.006+0.005)(-0.007-0.003).     

Evidence for the decay D0-->K(-)pi(+)pi(-)e(+)nu(e)

Using a 281 pb{-1} data sample collected at the psi(3770) with the CLEO-c detector, we present the first absolute branching fraction measurement of the decay D0-->K(-)pi(+)pi(-)e(+)nu(e) at a statistical significance of about 4.0 standard deviations. We find 10 candidates consistent with the decay D0-->K(-)pi(+)pi(-)e(+)nu(e). The probability that a background fluctuation accounts for this signal is less than 4.1 x 10{-5}. We find B(D0-->K(-)pi(+)pi(-)e(+)nu(e)) = [2.8{-1.1}{+1.4}(stat)+/-0.3(syst)]x10{-4}. By restricting the invariant mass of the hadronic system to be consistent with K1(1270), we obtain the product of branching fractions B(D{0}-->K{1}{-}(1270)e{+}nu{e})xB(K1-(1270)-->K{-}pi{+}pi{-})=[2.5{-1.0}{+1.3}(stat)+/-0.2(syst)]x10{-4}. Using B(K1-(1270)-->K{-}pi{+}pi{-})=(33+/-3)%, we obtain B(D{0}-->K{1}{-}(1270)e{+}nu{e})=[7.6{-3.0}{+4.1}(stat)+/-0.6(syst)+/-0.7]x10{-4}. The last error accounts for the uncertainties in the measured K1-(1270)-->K{-}pi{+}pi{-} branching fractions.     

Diffractive multi-beam surface micro-processing using 10 ps laser pulses

A high repetition rate picosecond laser system is combined with a spatial light modulator (SLM) for diffractive multiple beam processing. The effect of the zero order beam is eliminated by adding a Fresnel zone lens (FZL) to defocus the un-diffracted beam at the processing plane. Chromatic dispersion, which is evident with a large bandwidth femtosecond pulses leading to the problem of distorted hole shape is eliminated due to the much narrower spectral bandwidth, 0.1 nm at 10 ps pulselength, resulting in highly uniform intensity spots, independent of diffraction angle. In addition, high-throughput processing is demonstrated by combining the high power laser output, 2.5 W at λ ≈ 1064 nm and fast repetition rate, f ≈ 20 kHz with P > 1.2 W diffracted into 25 parallel beams. This has the effect of creating an “effective” repetition rate of 500 kHz without restrictive scan speeds.     

Photoluminescence lifetime,absorption and excitation spectroscopy measurements on isoelectronic bound excitons in beryllium-doped silicon

Photoluminescence lifetime measurements confirm that the intense lines seen in Be-doped Si result from exciton recombination at an isoelectronic binding centre, and in addition reveal that other weaker lines are due to a different isoelectronic binding centre. We suggest that these two binding centres may be related in the same way as are the Group III acceptors and the X-acceptors in Si. A number of excited states of the main isoelectronic bound exciton have been observed in absorption, excitation and luminescence spectra, and the density of the binding centres has been determined.