聚丙烯孔洞铁电驻极体膜的电极化及其电荷动态特性

根据栅控恒压电晕充电组合反极性电晕补偿充电法的实验结果计算出铁电驻极体的极化强度.结果说明，伴随着薄膜内孔洞气体的Paschen击穿，该铁电体的极化强度随栅压增加而显著上升.利用上述充电方法和热刺激放电(TSD)谱的分析讨论了这类空间电荷型宏观电偶极子，及与其补偿的空间电荷热退极化的电荷动态特性；阐明了这两类俘获电荷的能阱分布，即构成宏观电偶极子的位于孔洞上下介质层内的等值异号空间电荷分别被俘获在深、浅两种能值陷阱内，而位于薄膜表面层的注入空间电荷则被俘获在中等能值陷阱中. 关键词： 反极性电晕补偿充电法 铁电驻极体 充电电流 热刺激放电     

空气/水界面水分子的取向和运动

对四种不同的实验构型下空气／水界面自由O-H键在3700cm~(-1)的和频振动光谱的分析表明,水分子在空气／水界面的取向运动只可能是在平衡位置附近有限角度之内的受限转动。界面水分子的自由O-H键取向距界面法线约33°,而取向分布或运动的宽度不超过15°。这一图像显著地不同于Wei等人(Phys. Rev. Lett.86,4799(2001))只通过单一的SFG实验构型所得出结论,即：空气／水界面的水分子在超快的振动弛豫时间内在很大的角度范围内运动。     

运用量子约束动力学对具有耗散的量子位的追踪控制

在有限温度环境内，量子约束动力学及其追踪控制可使退相干系统的相干性稳定一段时间.约束方程产生的控制场能够按量子比特的动力学状态进行控制(量子动力学轨道的反馈控制)；依靠量子比特的这种反馈效应，可使量子位稳定在设定的时间内.同时，在量子位的稳定方面，温度扮演一种消极的角色. 关键词： 量子约束动力学 耗散量子位的控制 追踪控制 量子比特的反馈效应     

Growth studies of m-GaN layers on LiAlO2 by MOCVD

This paper reports that the m-plane GaN layer is grown on （200）-plane LiAlO2 substrate by metal-organic chemical wpour deposition （MOCVD） method. Tetragonal-shaped crystallites appear at the smooth surface. Raman measurement illuminates the compressive stress in the layer which is released with increasing the layer＇s thickness. The high transmittance （80%）, sharp band edge and excitonic absorption peak show that the GaN layer has good optical quality. The donor acceptor pair emission peak located at -3.41 eV with full-width at half maximum of 120 meV and no yellow peaks in the photoluminescence spectra partially show that no Li incorporated into GaN layer from the LiAlO2 substrate.     

T-型树谱唯一性的一个简单刻画

图G称为谱唯一的,如果任何与G谱相同的图一定与G同构.一棵树称为T-型树如果其仅有一个最大度为3的顶点.本文给出了T-型树谱唯一性的一个简单刻画,从而完全解决了T-型树的谱唯一性问题.     

All-optical frequency multiplication/recovery based on a semiconductor optical amplifier ring cavity

A novel scheme for all-optical frequency multiplication/recovery based on a semiconductor optical amplifier ring cavity is proposed and investigated numerically. The results show, for a 2.5 GHz driving pulse train, it can be generated 5-25 GHz repetition rate pulse trains with low clock amplitude jitter, polarization independence and high peak power. Furthermore, the extraction of the clock signal from a pseudorandom bit sequence signal can be realized based on the proposed scheme.     

Commuting and stable feedback design for switched linear systems

In the paper, commuting and stable feedback design for switched linear systems is investigated. This problem is formulated as to build up suitable state feedback controller for each subsystem such that the closed-loop systems are not only asymptotically stable but also commuting each other. A new concept, common admissible eigenvector set (CAES), is introduced to establish necessary/sufficient conditions for commuting and stable feedback controllers. For second-order systems, a necessary and sufficient condition is established. Moreover, a parametrization of the CAES is also obtained. The motivation comes from stabilization of switched linear systems which consist of a family of LTI systems and a switching law specifying the switching between them, where if all the subsystems are stable and commuting each other, then the total system is stable under arbitrary switching.     

具有某种断面的半群的研究进展

本文综述了几类具有特殊断面的半群的近期研究结果。在介绍逆半群和正则半群的一般结构之后，概述了具有逆断面的正则半群的结构和同余格的研究成果。总结了作为逆断面的推广的可裂断面，纯正断面，正则^*－断面和恰当断面。提出了可以进一步研究的重要的问题。     

Laser induced copper electroless plating on polyimide with Q-switch Nd:YAG laser

The results of laser induced deposition of copper on polyimide substrate from copper electrolyte solution are reported. Unlike most work reported in the literatures where CW Ar⁺ lasers were used, a second harmonic (532 nm wavelength) Q-switch Nd:YAG laser was used for our experiments. The deposition process was conducted by laser-catalyzing of the polyimide surface and subsequent photothermal-accelerated reduction of copper-complex ions in an alkaline reducing environment. The characteristics of the deposited copper line were investigated in terms of laser beam scanning speed, and the number of scans. The surface morphology and chemical composition of the deposited copper were analyzed using field emission scanning electron microscope (FESEM) and energy dispersive spectrometer (EDX). The optimum processing conditions have been identified. The copper deposit was found to adhere well to the substrate.     

The orientation-selective growth of LaNiO3 films on Si(100) by pulsed laser deposition using a MgO buffer

Highly (100)-oriented, (110)-oriented and polycrystalline LaNiO₃ (LNO) films were successfully prepared on Si(100) using an oriented MgO film as a buffer. It was somewhat surprising to find that that the orientation relation between the LNO film and the corresponding MgO buffer was: LNO(100)\MgO(110), LNO(110)\MgO(111) and LNO(polycrystalline)\MgO(100). The crystalline quality of the LNO films was shown to be sensitive to the preparation conditions of the MgO buffer. The film surface was very smooth, without micrometer-sized droplets being observed. All LNO films were of metallic conductivity, with a room-temperature resistivities of approximately 250, 280 and 420 μΩ cm for the (110)-oriented, (100)-oriented and polycrystalline LNO, respectively. Received: 2 April 2001 / Accepted: 23 October 2001 / Published online: 3 June 2002