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101.
Au nanoparticles were precipitated inside Au+-doped glass samples after irradiation by femtosecond laser or x-ray. Femtosecond laser and X-ray irradiation result in decreasing of anneal temperature and critical size for the precipitation of Au nanoparticles. 相似文献
102.
GFFs with less than 0.4 dB peak-to-peak error functions are routinely fabricated using commercially available coating machines by utilizing the natural error compensation mechanism of wavelength variable turning point optical monitoring method. 相似文献
103.
Photonic devices based on III-nitrides offer benefits such as UV/blue emission, large band offsets of InN/GaN/AlN heterostructures allowing novel quantum well (QW) device design, and inherently high-emission efficiencies. Furthermore, due to their mechanical hardness and larger band gaps (when compared with conventional semiconductor devices), III-nitride-based devices may operate at much higher temperatures and voltages/power levels for any dimensional configuration and in harsher environments than other semiconductor devices and are expected to provide much lower temperature sensitivities. These are crucial advantages for many applications. Over the last decade, the physics of microsize photonic devices has been investigated. New physical phenomena and properties are expected to dominate as the device size scales down. The microsize light emitters offer benefits over edge emitters such as the ability to create arrays of individually controllable pixels on a single chip, enhanced quantum efficiency, and greatly reduced lasing threshold. Rapid progress in the area of III-nitride microphotonics has been made. The growth and fabrication of micron and submicron size photonic structures based on III-nitride wide bandgap semiconductors has been achieved, and the technology has made it possible to integrate arrays of optical elements to form active photonic-integrated devices. One example is an interconnected µ-LED with enhanced emission efficiency over the conventional LEDs for the same device area. Another example is a µ-LED array with independently addressed pixels or III-nitride microdisplay. III-nitride microdisplay may offer performance that is superior to microdisplays fabricated from liquid crystals and organic LEDs. The third example presented is III-nitride UV Focal Plane Arrays (UV-FPA) of detectors. So far, the operation of AlGaN UV-FPA with size up to 256×256 pixels with 30×30?μm2 unit cells has been demonstrated. Together with the nature of their two-dimensional array, these active micro-photonic devices show promise in many important applications, such as optical communications, signal and image processing, optical interconnects, computing, enhanced energy conversion and storage, chemical, biohazard substances, and disease detection, missile and shellfire, atmospheric ozone-level, and flame sensing. III-nitride microlens arrays have been fabricated successfully for blue and UV wavelength applications on GaN and AlN. The successful fabrication of microlens arrays based on III-nitride materials opens the possibility for monolithically integrating nitride-based micro-size photonic devices, as well as coupling light into, out of, and between arrays of III-nitride emitters and detectors, especially for short wavelengths covering the green-blue to deep UV (200?nm) region. Nanofabrication and characterization of photonic crystals with diameter/periodicity as small as 100/180?nm on InGaN/GaN MQW has been achieved. An unprecedented maximum enhancement factor of 20 was obtained under optical pumping. Single-mode ridged optical waveguide devices using GaN/AlGaN heterostructures have been designed, fabricated, and characterized for operation in 1550?nm wavelength window. The feasibility of developing novel photonic integrated circuits based on III-nitride wide bandgap semiconductors for fiber-optical communications has been investigated. 相似文献
104.
Hong Mao-Chun Huang Zhi-Ying Cao Rong Jiang Fei-Long Liu Han-Qin State Kev Laboratory of Structural Chemistry and Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian 《结构化学》1993,(5)
<正> [Au13Ag12(μ-Br)1(μ3-Br)2 (Ph3P)10Br2] Br, monoclinic. space group C2/m, a = 36. 496(17). b=16. 878(7), c-=19. 772(9) A , β=99. 87(5)°, V=11998. 9 A3.Z=2. The final R(Rw) is 0. 097(0. 109) for 3779 reflections with I>3σ(I). The structure can he considered as two icosahedral cluster units (AurAg6) sharing one vertex and linked hy six bromine atoms. The Au - Au, Au - Ag. and Ag-Ag distances fall in the ranges of 2. 69-2. 96. 2. 84-3. 02. and 2. 92-3. 26 A, respectively. 相似文献
105.
在饲育温度条件下研究了S.decipiens的生长和产仔数及与饲育水温的关系。结果表明水温在上升期和下降期,新生贝和稚贝的生长速度较快,产仔数也较多.成体贝在水温11℃~29℃时,都可产出新生贝,以18℃~24℃时产出较多.在高温饲育条件下,成体贝的生长速度缓慢。 相似文献
106.
蒋身学 《南京林业大学学报(自然科学版)》1995,19(1):53-58
简述了链式输送竹片软化机的设计指导思想和设计方案,重点介绍软化机的构成,参数的确定以及它的优点。 相似文献
107.
108.
在HL-1托卡马克上进行了辅助加热、加料、电流驱动的物理实验研究。在改善等离子体约束方面,某些实验取得了较好的结果。在适当的稳定放电条件下,低杂波电流驱动和弹丸注入辅助加料,均能使等离子体能量约束得到一定程度的改善,与相同密度条件下的欧姆加热放电相比,能量约束时间提高了约30%。在电子回旋共振加热等离子体实验中,等离子体总能量明显增加,但与相同密度条件下的欧姆加热放电相比,能量约束时间减少了约20%。 相似文献
109.
提出了一个新的人才预测模型,其主要优点是可对残缺原始数据进行加工,且可修正预测值的随机误差影响,预测精度较高.本文还给出了用该模型对某校师资进行预测的实例,得到满意结果. 相似文献
110.
Yanlin Huang Kiwan Jang Wanxue Zhao Eunjin Cho Ho Sueb Lee Xigang Wang Dake Qin Ying Zhang Chanfang Jiang Hyo Jin Seo 《Journal of solid state chemistry》2007,180(12):3325-3332
Usually, Sm2+ ions could be reduced by heating the materials in reducing atmospheres. Exposure to ionizing radiations is also known to cause Sm3+→Sm2+ conversion. In this work, BaBPO5 doped with the samarium ion was prepared by high temperature solid-state reaction. Sm2+ ions were obtained by two different reduction methods, i.e., heating in H2 reduced atmosphere and X-ray irradiation. The measurements of X-ray diffraction (XRD), and scanning electron microscope (SEM) were investigated. It is found that the conversion of Sm3+→Sm2+ is very efficient in BaBPO5 hosts after X-ray irradiation. Sm2+ ions under these two reduction methods exhibit different characteristics that were studied by measurements of luminescence and decay. The results showed that the luminescence properties of Sm2+ ions in BaBPO5 were highly dependent on the sample preparation conditions. 相似文献