Manipulation of light at the nanoscale for high-performance spectroscopic and optical applications

In this paper, we explore the use of nanostructures for a number of fascinating applications. These applications based on nanostructures include (1) optical sensors, (2) nanopixel printing, (3) improving the resolution of imaging techniques, and (4) lithography. In the sensing field, nanostructures are exploited for advanced sensor performance, namely, the label-free and enhanced sensitivity of (1) the surface plasmon resonance sensor and (2) the extraordinary optical transmission sensor and (3) the high sensitivity and selectivity of surface-enhanced Raman spectroscopy. In addition, research using nanostructures for visual applications was introduced for (1) harnessing nanostructures for full-color pixel printing and (2) exploiting metallic nanostructures to enhance the imaging resolution under diffraction limits based on the plasmonic effect. Finally, we introduce low cost, high accuracy, and fast lithographic methods based on the plasmonic effect by exploiting metallic nanostructures.     

基于激光雷达的垂直能见度反演算法及其误差评估

针对大气垂直方向上消光系数分布不均匀难以用传统方法直接测量垂直能见度的问题,提出了一种基于激光雷达探测垂直能见度的计算方法。根据大气辐射传输基本原理,借助于辐射传输方程,推导出了垂直能见度的计算公式;然后利用激光雷达原理方程和Klett算法反演出大气垂直方向上的消光系数分布,基于此提出了垂直能见度的迭代算法。最后,利用灰色模型GM(1,1)和批统计算法,对激光雷达反演得到的后向散射系数进行了评估,给出了误差置信区间为（0.760±0.339）×10⁻⁴（srad·km）⁻¹。结果表明,该方法是一种特别有效的计算垂直能见度的方法,符合探测的基本需求,且误差小精度高。     

多路Marx并联高压脉冲电源研究

脉冲功率技术在工业和生物医学领域有着广泛的应用,很多应用场合要求输出数百安培的高压脉冲。固态Marx发生器虽已研究多年,但是被广泛采用直插封装的IGBT和MOSFET功率半导体开关管的额定电流通常都低于100 A,无法满足低阻抗负载的应用需求。为提高输出脉冲电流幅值,提出两种多路Marx发生器并联的脉冲电源的拓扑结构,第一种方案采用多路Marx发生器直接并联,第二种是共用一组充电开关管的多路Marx发生器并联。由FPGA提供充放电控制信号,采用串芯磁环隔离驱动方案实现带负压偏置的同步驱动,主电路选用开通速度快、通流能力强的IGBT为主开关的半桥式固态方波Marx电路。实验结果表明,6路16级Marx直接并联的脉冲发生器能输出重频100 Hz高压方波脉冲幅值可达10 kV,在30 Ω负载侧输出峰值电流可达300 A,上升时间230 ns。共用充电开关管的6路4级Marx并联发生器在5 Ω电阻负载上的输出电流峰值可达300 A,最大输出电流可达460 A,上升时间272 ns。表明多路Marx发生器并联可以有效地减小系统内阻,提高系统带载能力;改进后的并联方案实现大电流脉冲输出的同时,所采用的开关管数量减小近一半,提高了系统的抗干扰能力的同时,降低了脉冲电源的成本;且增加级间并联导线可进一步改善均流效果。

     

241Am-Be中子参考辐射的蒙特卡罗模拟研究

研究用于校准场所中子剂量监测仪表的241Am-Be中子参考辐射场计量特性。采用蒙特卡罗方法模拟了空气自由中子参考辐射(FRNR),GB/T 14055规定的最小尺寸中子参考辐射(SRNR)和实际中子参考辐射(ARNR)中不同检验点处中子周围剂量当量率、散射中子占比和能谱分布特征。研究结果表明,空气对FRNR中的剂量率和能谱分布影响小,近似为理想中子参考辐射;采用5%含硼聚乙烯作屏蔽的最小尺寸SRNR可减少热中子,降低散射中子占比,影锥法不适用于小尺寸中子参考辐射中对散射中子的修正;ARNR中的散射中子更少、占比更低,影锥法所得散射中子占比与理论值基本一致。     

铋化物发光玻璃中银表面等离激元对铒离子的发光增强作用

局域表面等离激元可以由自由空间的光直接激发,这也是局域表面等离激元的优点所在。研究铋化物发光玻璃中纳米银颗粒的表面等离激元对铒离子发光的增强效应、进一步的提高铋化物发光玻璃中铒离子的发光性能很有意义。首先,测量了(A)Er 3+(0.5%)Ag(0.5%):铋化物发光玻璃与(B)Er 3+(0.5%):铋化物发光玻璃样品的吸收谱,发现(A)Er 3+(0.5%)Ag(0.5%):铋化物发光玻璃在约600.0 nm处有一个较弱的宽的银表面等离激元共振吸收峰。同时发现两者都有典型的铒离子的吸收峰,它们的吸收几乎完全一样:在波峰形状、峰值强度和峰值波长等方面都很相近。测量了(A)Er 3+(0.5%)Ag(0.5%):铋化物发光玻璃和(B)Er 3+(0.5%):铋化物发光玻璃样品的激发谱,发现有位于379.0,406.0,451.0,488.0和520.5 nm的5个550.0 nm可见光的可见激发谱峰,和位于379.0,406.5,451.0,488.5,520.5,544.0,651.5和798.0 nm的8个1531.0 nm红外光的红外激发谱峰,容易指认出依次为Er 3+的4I 15/2→4G 11/2,4I 15/2→2H 9/2,4I 15/2→(4F 3/2,4F 5/2),4I 15/2→4F 7/2,4I 15/2→2H 11/2,4I 15/2→4S 3/2,4I 15/2→4F 9/2和4I 15/2→4I 9/2跃迁的吸收峰,通过测量发现(A)Er 3+(0.5%)Ag(0.5%):铋化物发光玻璃相对于(B)Er 3+(0.5%):铋化物发光玻璃样品的可见和红外激发谱的最大增强依次分别是238%和133%。最后,测量了它们的发光谱,发现有位于534.0,547.5和658.5 nm的三组可见发光峰,容易指认出依次为Er 3+的2H 11/2→4I 15/2,4S 3/2→4I 15/2,4F 9/2→4I 15/2荧光跃迁。还发现红外发光峰位于978.0和1531.0 nm,依次为Er 3+的4I 11/2→4I 15/2和4I 13/2→4I 15/2的荧光跃迁。通过测量发现(A)Er 3+(0.5%)Ag(0.5%):铋化物发光玻璃相对于(B)Er 3+(0.5%):铋化物发光玻璃样品的可见和红外发光谱的最大增强依次分别是215%和138%。对于银表面等离激元增强铒离子发光的机理,认为主要为纳米银颗粒的局域表面等离激元共振,造成金属纳米结构附近产生的局域电场的强度要远大于入射光的电场强度,从而导致了金属纳米结构对入射光产生强烈的吸收和散射,进而导致了荧光的增强;即局域表面等离子体共振局域场的场增强效应。     

Harmonically pump a femtosecond optical parametric oscillator to 1.13 GHz by a femtosecond 515 nm laser

We demonstrate a harmonically pumped femtosecond optical parametric oscillator(OPO)laser using a frequency-doubled mode-locked Yb:KGW laser at a repetition rate of 75.5 MHz as the pump laser.Based on a bismuth borate nonlinear crystal,repetition rates up to 1.13 GHz are realized,which is 15 times that of the pump laser.The signal wavelength is tunable from 700 nm to 887 nm.The maximum power of the signal is 207 m W at the central wavelength of 750 nm and the shortest pulse duration is 117 fs at 780 nm.The beam quality(M^2 factor)in the horizontal and vertical directions of the output beam are 1.077 and 1.141,respectively.     

Seeing the Unseen: Experimental Observation of Magnetic Anapole State Inside a High-Index Dielectric Particle

The existence of non-radiating electromagnetic sources attracts much attention in photonic community and gives rise to extensive discussions of various applications in lasing, medical imaging, sensing, and nonlinear optics. In this article, the existence of magnetic anapole states (or magnetic-type non-radiating sources) characterized by a suppressed magnetic dipole radiation in a dielectric cylindrical particle is theoretically predicted and experimentally demonstrated. The specific features of the magnetic anapole state under ideal conditions are identified, followed by a demonstration of how their existence can be detected in practical structures. The concept is valid in various frequency bands from visible range for nanoparticles to microwave range for millimeter size objects. The experimental study is performed in microwave frequency range which allows not only to measure the far-field (scattered field) characteristics, but also to probe the peculiar field profile directly inside the dielectric particle. The experimental results agree well with the analytical ones and pave the way to detect and identify nontrivial different-type anapole states.     

Preparation of Highly Stable and Photoluminescent Cadmium-Free InP/GaP/ZnS Core/Shell Quantum Dots and Application to Quantitative Immunoassay

Indium phosphide (InP) quantum dots (QDs) are ideal substitutes for widely used cadmium-based QDs and have great application prospects in biological fields due to their environmentally benign properties and human safety. However, the synthesis of InP core/shell QDs with biocompatibility, high quantum yield (QY), uniform particle size, and high stability is still a challenging subject. Herein, high quality (QY up to 72%) thick shell InP/GaP/ZnS core/shell QDs (12.8 ± 1.4 nm) are synthesized using multiple injections of shell precursor and extension of shell growth time, with GaP serving as the intermediate layer and 1-octanethiol acting as the new S source. The thick shell InP/GaP/ZnS core/shell QDs still keep high QY and photostability after transfer into water. InP/GaP/ZnS core/shell QDs as fluorescence labels to establish QD-based fluorescence-linked immunosorbent assay (QD-FLISA) for quantitative detection of C-reactive protein (CRP), and a calibration curve is established between fluorescence intensity and CRP concentrations (range: 1–800 ng mL⁻¹, correlation coefficient: R² = 0.9992). The limit of detection is 2.9 ng mL⁻¹, which increases twofold compared to previously reported cadmium-free QD-based immunoassays. Thus, InP/GaP/ZnS core/shell QDs as a great promise fluorescence labeling material, provide a new route for cadmium-free sensitive and specific immunoassays in biomedical fields.     

Efficient Quantum Dot Light-Emitting Diodes Based on Well-Type Thick-Shell CdxZn1−xS/CdSe/CdyZn1−yS Quantum Dots

Device grade quantum dots (QDs) require QDs ensembles to retain their original superior optical properties as in solution. QDs with thick shells are proven effective in suppressing the inter-dot interaction and preserving the emission properties for QDs solids. However, lattice strain–induced defects may form as the shell grows thicker, resulting in a notable photoluminescence quenching. Herein, a well-type Cd_xZn_1−xS/CdSe/Cd_yZn_1−yS QDs is proposed, where ternary alloys CdZnS are adopted to match the lattice parameter of intermediate CdSe by separately adjusting the x and y parameters. The resultant thick-shell Cd_0.5Zn_0.5S/CdSe/Cd_0.73Zn_0.27S QDs reveal nonblinking properties with a high PL QY of 99% in solution and 87% in film. The optimized quantum dot light-emitting diodes (QLEDs) exhibit a luminance of 31547.5 cd m⁻² at the external quantum efficiency maximum of 21.2% under a bias of 4.0 V. The shell thickness shows great impact on the degradation of the devices. The T₅₀ lifetime of the QLEDs with 11.2 nm QDs reaches 251 493 h, which is much higher than that of 6.5 and 8.4 nm QDs counterparts. The performances of the well-type thick-shell QLEDs are comparable to state-of-the-art devices, suggesting that this type of QDs is a promising candidate for efficient optoelectronic devices.     

Entropic uncertainty relation in neutrino oscillations

The European Physical Journal C - We study the isentropic evolution of the matter produced in relativistic heavy-ion collisions for various values of the entropy-per-baryon ratio of interest for...