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101.
The thermal stability and measurement temperature dependence of Schottky contact characteristics on n-GaN using a W2B5/Ti/Au metallization scheme was studied using current-voltage (I-V), scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) measurements. The elemental profile obtained from samples annealed at 350 °C showed some titanium diffusion into the gold layer but little other difference from the as-deposited wafer. Annealing at 700 °C produced significant diffusion of titanium. The Schottky barrier height increased with anneal temperature up to 200 °C, reaching a maximum value of 0.65 eV, but decreased at higher annealing temperatures. The reverse breakdown voltage from diodes fabricated using the W2B5-based contacts showed a similar dependence. The reverse current magnitude was larger than predicted by thermionic emission alone. The barrier height showed only minor changes with measurement temperature up to 150 °C. 相似文献
102.
Fe-doped TiO2 powder was prepared by high-energy ball milling, using TiO2 Degussa P-25 and α-Fe powders as the starting materials. The structure and magnetic properties of the Fe-doped TiO2 powder were studied by X-ray diffraction, 57Fe Mossbauer spectroscopy and vibrating sample magnetometer. The Reitveld refinement of XRD revealed that ball milling not only triggered incorporation of Fe in TiO2 lattice but also induced the phase transformation from anatase to rutile in TiO2 and consequently the milled Fe-doped TiO2 powder contained only rutile.57Fe Mössbauer effect measure showed that Fe atoms existed in Fe2+ and Fe3+ state, which were assigned to the solid solution FexTi1−xO2. The magnetization measurements indicated that the milled Fe-doped TiO2 powder was ferromagnetic above room temperature. The ferromagnetism in our milled Fe-doped TiO2 powder seemingly does not come from Fe and iron oxides particles/clusters but from the Fe-doped TiO2 powder matrices. 相似文献
103.
104.
105.
R. Lü H. Pan J.-L. Zhu B.-L. Gu 《The European Physical Journal B - Condensed Matter and Complex Systems》2002,26(4):479-491
The tunneling of a giant spin at excited levels is studied theoretically in mesoscopic magnets with a magnetic field at an
arbitrary angle in the easy plane. Different structures of the tunneling barriers can be generated by the magnetocrystalline
anisotropy, the magnitude and the orientation of the field. By calculating the nonvacuum instanton solution explicitly, we
obtain the tunnel splittings and the tunneling rates for different angle ranges of the external magnetic field ( θ
H = π/2 and π/2 < θ
H < π). The temperature dependences of the decay rates are clearly shown for each case. It is found that the tunneling rate
and the crossover temperature depend on the orientation of the external magnetic field. This feature can be tested with the
use of existing experimental techniques.
Received 12 March 2001 and Received in final form 18 October 2001 相似文献
106.
Effects of Nb2O5 on thermal stability and optical properties of Er3+-doped tellurite glasses
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Er3+-doped tellurite glasses with molar compositions of
xNb2O5-(14.7-x)Na2O--10ZnO--5K2O--10GeO2--
60TeO2--0.3Er2O3
(x=0, 3, 5, 7 and 9) have been investigated for developing 1.5~μm
fibre and planar amplifiers. The effects of Nb2O5 on the thermal stability
and optical properties of Er3+-doped tellurite glasses have been discussed.
It is noted that the incorporation of Nb2O5 (x=5) increases the thermal
stability of tellurite glasses significantly. Er3+-doped niobium tellurite
glasses exhibit a large stimulated emission cross-section (7.2\times 10-21-
10.7×10-21~cm2 and the gain bandwidth, FWHM×\sigmae^{\rm peak} (274\times 10-28 - 480×10-28~cm3), which are
significantly higher than that of silicate and phosphate glasses. In addition, the
intensity of upconversion luminescence of the Er3+-doped niobium tellurite
glasses decreases rapidly with increasing Nb2O5 content. As a result,
Er3+-doped niobium tellurite glasses might be a potential candidate for
developing laser or optical amplifier devices. 相似文献
107.
J. Jiang B.Y. Jiang C.X. Ren F.M. Zhang T. Feng X. Wang X.H. Liu S.C. Zou 《Applied Surface Science》2006,252(10):3642-3646
Hafnium and platinum were deposited onto molybdenum grids by ion-beam assisted deposition method. Electron-emission characteristics from molybdenum grids with Hf and Pt films, which were contaminated by active electron-emission substances (Ba, BaO) of the cathode, were measured using analogous diode method. The surfaces of grids were analyzed by X-ray diffraction. The results revealed that the reaction between BaO and Hf formed BaHfO3 compound, which greatly reduced the accumulation of BaO on the surface and accordingly decreased grid emission. In contrast, Ba were formed by the decomposition of BaO on the surface of Pt film under high temperature and re-evaporated from its surface, which reduced the active electron-emission substances on the surface of the grid and effectively restrained grid emission. Their mechanisms for grid-emission suppression are discussed and a good method to develop new grid-coating materials is suggested. 相似文献
108.
Let A and B be two finite subsets of a field
. In this paper, we provide a non-trivial lower bound for {a+b:aA, bB, and P(a,b)≠0} where P(x,y)
[x,y]. 相似文献
109.
采用低压金属有机化合物气相沉积法(LP-MOCVD)生长并制作了1.6—1.7μm大应变InGaAs/InGaAsP分布反馈激光器.采用应变缓冲层技术,得到质量良好的大应变InGaAs/InP体材料.器件采用了4个大应变的量子阱,加入了载流子阻挡层改善器件的温度特性.1.66μm和1.74μm未镀膜的3μm脊型波导器件阈值电流低(小于15mA),输出功率高(100mA时大于14mW).从10—40℃,1.74μm激光器的特征温度T0=57K,和1.55μm InGaAsP分布反馈激光器的特征温度相当.
关键词:
MOCVD
InGaAs/InGaAsP
应变量子阱
分布反馈激光器 相似文献
110.