Two remarks on sextic double solids

We study the potential density of rational points on double solids ramified along singular reduced sextic surfaces. Also, we investigate elliptic fibration structures on nonsingular sextic double solids defined over a perfect field of characteristic 5.     

Synthesis and thermal properties of disiloxane-arylene polymers by dehydrocoupling polymerization of bis(dimethylsilyl)arylene with water

Disiloxane-arylene polymers having phenylene, biphenylene, and fluorenylene groups as arylene units were synthesized by dehydrocoupling polymerization of corresponding bis(silane) derivatives with water. The reactivity of Si-H was not affected by the structure of aromatic groups in the reaction. The polymers containing biphenylene and fluorenylene units are amorphous and show higher glass transition temperatures than the polymer from 1,4-bis(dimethylsilyl)benzene.     

Optical and acoustic study of nucleation and growth of bubbles at a liquid-solid interface induced by nanosecond-pulsed-laser heating

The dynamics of liquid-vapor phase-change in the nanosecond time-scale induced by pulsed-laser heating of a liquid on a solid sample is studied by means of optical reflectance and scattering measurements, and the piezoelectric detection technique. The liquids studied include water, ethanol, methanol, IsoproPropyl Alcohol (IPA), and mixtures of water and IPA. The threshold fluence for nucleation is determined with high accuracy using the optical and acoustic signals. Heat diffusion calculations performed for the threshold fluences indicate that the liquids are sufficiently superheated before nucleation sets on. The transient optical reflectance signal is analyzed by an effective-medium theory to provide bubble-growth kinetics, so that the bubble-growth velocity for the test liquids could be estimated. In addition, it is observed that, following the thermally induced nucleation, repetitive acoustic cavitation at the surface of the solid sample occurs, with a time interval related to the speed of sound in the liquid.     

Optical and structural properties of nanosized ZnGa2O4:Cr phosphor

Nanosized ZnGa₂O₄:Cr³⁺ powder is synthesized through hydrothermal method. The average particle size is 20 nm and they are spherical in shape. The excitation band from the charge transfer between Cr³⁺-O²⁻ shows a blueshift behavior due to quantum confinement effect. X-ray diffraction pattern, Fourier transform-infrared spectrum, and electron paramagnetic resonance signal indicate that nanosized ZnGa₂O₄:Cr³⁺ phosphor shows many defect-related energy states and heavy lattice distortion in comparison with bulk ZnGa₂O₄:Cr³⁺ phosphor. Many defect states result in more nonradiative loss and shorter decay time.     

Ultrafast laser ablation of indium tin oxide thin films for organic light-emitting diode application

Ultrafast laser ablation of ITO thin film coated on the glass has been investigated as a function of laser fluence as well as the number of laser pulses. The ablation threshold of ITO thin film was found to be 0.07 J/cm² that is much lower than that of glass substrate (about 1.2–1.6 J/cm²), which leads to a selective ablation of ITO film without damage on glass substrate. The changes in the electrical resistance and morphology of ablated trench of ITO electrode were found to be strongly dependent on the processing conditions. We present the performance of organic light-emitting diodes (OLED) fabricated with ITO electrode patterned by ultrafast laser ablation.     

Optical properties of bulk Zn1−xCoxO magnetic semiconductors

Polycrystalline Zn_1−xCo_xO (x=0, 0.02, 0.05, 0.10 and 0.15) oxides have been synthesized by solid state reaction via sintering ZnO and Co powders in open air. X-ray diffraction analyses using Rietveld refinement indicate that a stoichiometric single phase with a wurtzite-like structure was found in Zn_1−xCo_xO samples with x up to 0.10. The elemental mapping using energy dispersive X-ray spectroscopic analyses presents a uniform distribution of Co. Optical transmittance measurements show that several extra absorption bands appear in the Co-doped ZnO, which is due to the transitions between the crystal-field-split 3d levels of tetrahedral Co²⁺ substituting Zn²⁺ ions. Raman measurements show that limited host lattice defects are induced by Co doping. Magnetization measurements reveal that the Co-doped ZnO samples are paramagnetic due to the absence of free carriers and in low temperature the dominant magnetic interaction is nearest-neighbor antiferromagnetic.     

A facile synthesis of simple alkaloids—synthesis of 2,3-polymethylene-4(3H)-quinazolinones and related alkaloids

An efficient procedure for preparation of the simple alkaloids, 2,3-polymethylene-4(3H)-quinazolinones, luotonin A, tryptanthrin, and rutaecarpine has been established by the reaction of lactam-HCl salts with POCl₃ followed by cyclization with methyl anthranilate.     

Native oxide buried InAlAs ridge waveguide laser diode

InAlAs wet thermal oxidation process was adopted to fabricate ridge waveguide laser diodes. First, applying the oxidation process on the whole etched surface of an InAlAs upper cladding layer, we formed a current blocking and optical confining layer of ridge waveguide laser diode. This is a self-aligned structure, which makes the laser diode fabrication steps much simpler and etching-depth control less important. Assessment of the fabricated laser diode revealed that current-voltage characteristics and slope efficiency did not worsen, and threshold current was reduced by the oxidation process. PACS 85.35.Be; 42.55.Px     

Bandgap engineering of self-assembled InAs quantum dots with a thin AlAs barrier

We investigate the effects of a thin AlAs layer with different position and thickness on the optical properties of InAs quantum dots (QDs) by using transmission electron microscopy and photoluminescence (PL). The energy level shift of InAs QD samples is observed by introducing the thin AlAs layer without any significant loss of the QD qualities. The emission peak from InAs QDs directly grown on the 4 monolayer (ML) AlAs layer is blueshifted from that of reference sample by 219 meV with a little increase in FWHM from 42–47 meV for ground state. In contrast, InAs QDs grown under the 4 ML AlAs layer have PL peak a little redshifted to lower energy by 17 meV. This result is related to the interdiffusion of Al atom at the InAs QDs caused by the annealing effect during growing of InAs QDs on AlAs layer.