Ballistic spin interferometer based on the Rashba and Dresselhaus spin-orbit interactions

By using the Al'tshuler-Aronov-Spivak (AAS) model, we give the amplitude changing with Rashba spin-orbit interaction (SOI) and Dresselhaus SOI strength. In the first idea 1D square loop (SL), Rashba SOI acts on two sides while Dresselhaus SOI acts on the other two sides. In the second SL, we consume Rashba SOI and Dresselhaus SOI act on four sides simultaneously. This model can be replaced by another one that Rashba SOI and Dresselhaus SOI act on every side independently, and each side is twice long. We theoretically illustrate the influence of the Dresselhaus SOI on node position and number. To explain the “half oscillation” phenomenon found in experiment, we apply Dresselhaus SOI to the ideal 1D SL. The conclusion is that the Dresselhaus SOI has a strong effect on the emergence of “half oscillation”.     

Open-circuit voltage analysis of p-i-n type amorphous silicon solar cells deposited at low temperature

This paper identifies the contributions of p-a-SiC:H layers and i-a-Si:H layers to the open circuit voltage of p-i-n type a-Si:H solar cells deposited at a low temperature of 125 C.We find that poor quality p-a-SiC:H films under regular conditions lead to a restriction of open circuit voltage although the band gap of the i-layer varies widely.A significant improvement in open circuit voltage has been obtained by using high quality p-a-SiC:H films optimized at the "low-power regime" under low silane flow rates and high hydrogen dilution conditions.     

Photoemission intensity oscillations in the valence bands of C70 film

We have measured and analyzed the photoemission spectra (PES) of a C₇₀ film in the photon energy region from 13.4 eV to 98.4 eV. The photoelectron intensities of two C 2p π-derived features (denoted by A and B) oscillate regularly in the whole energy region with some fine structures below ∼30 eV. To obtain the detailed information of the oscillations, we have developed a sophisticated but practical procedure for intensity calculation. The procedure consists of two core concepts. The first is ascribing the PES features to their corresponding molecular orbitals with the help of density functional calculations. The second is a background subtraction algorithm. With this procedure, we obtained the oscillating behavior for individual features (A and B), which is by and large consistent with the predictions based on the spherical symmetric approximation although C₇₀ has the ellipsoidal shape. Owing to the solid state effect, the oscillating amplitudes of the A/B intensity ratios are smaller than those of gas phase C₇₀, but an orbital shift reported recently was not observed on our sample. The oscillating curve of a deeper feature, which consists of both σ and π states, are also reported.     

Theoretical study on line source laser-induced surface acoustic waves in two-layer structure in ablative regime

The generation of ultrasound in film–substrate system by a laser line source is studied in the case of ablation mechanism, which can be realized by adding a liquid layer at the excitation point. The time domain displacement can be yielded by the numerical jointed inversed Laplace–Fourier transformation technique. The typical surface acoustic waves (SAW) of two layer structures, slow film on fast substrate and fast film on slow substrate, are obtained and the effect of the propagation distance and the thickness of the film on the SAW are given.     

激光导致水击穿和等离子体形成过程的物理分析

对短脉冲激光作用水介质中引起光学击穿的机制进行了分析,通过自由电子密度速率方程的数值解确定激光的击穿阈值.将数值计算结果与波长在可见光和近红外波段,脉宽为ns、ps和fs的激光脉冲在纯净水和含有杂质的水中的实验测量的击穿阈值作了比较.还计算了等离子体中自由电子密度的演化、等离子体吸收系数和能量密度.通过解自由电子密度速率方程得到结果与实验测量的值符合得很好.     

Femtosecond laser ablation of Au film around single pulse threshold

Ablation process of 1-kHz femtosecond lasers (pulse duration of 148 fs, wavelength of 775 nm) of Au film on silica substrates is studied. The thresholds for single and multi pulses can be obtained directly from the relation between the squared diameter D2 of the ablated craters and the laser fluence φo. From the plot of the accumulated laser fluence Nφth(N) and the number of laser pulses N, incubation coefficient of Au film is obtained to be 0.765. Some experimental data obtained around the single pulse threshold are in good agreement with the theoretical calculation.     

Room temperature continuous wave operation of 1.33-μm InAs/GaAs quantum dot laser with high output power

Continuous wave operation of a semiconductor laser diode based on five stacks of InAs quantum dots (QDs) embedded within strained InGaAs quantum wells as an active region is demonstrated. At room temperature, 355-Mw output power at ground state of 1.33-1.35μm for a 20-μm ridge-waveguide laser without facet coating is achieved. By optimizing the molecular beam epitaxy (MBE) growth conditions,the QD density per layer is raised to 4 × 1010 cm-2. The laser keeps lasing at ground state until the temperature reaches 65 ℃.     

An Attempt at the Identification of the Dynamic Properties of the Isomerization Column on the Basis of the Results of Radioisotope Measurements

The present paper makes an attempt of the interpretation of the tracer measurements by means of transfer function. Obtained data of residence time of catalyst in xylene isomerization column inserted in previous paper [1] were used to the identification of dynamic properties of individual sections of the column.     

激光扫描技术在靶场测试中的应用研究

为了解决光电类仪器在武器射击准确度和射击密集度的测试中遇到天空背景亮度不够,或弹丸口径小,弹道偏高而无法测试的问题,利用旋转棱镜使激光束在空中扫描,照亮弹丸表面,从而大大降低对光电传感器灵敏度的要求,使得该项测试工作不受天空背景条件的影响,并提高测试精度.