首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   206905篇
  免费   2090篇
  国内免费   710篇
化学   109905篇
晶体学   3325篇
力学   7971篇
综合类   4篇
数学   19419篇
物理学   60855篇
综合类   8226篇
  2016年   2456篇
  2015年   1823篇
  2014年   2605篇
  2013年   8120篇
  2012年   5648篇
  2011年   7048篇
  2010年   4614篇
  2009年   4550篇
  2008年   6342篇
  2007年   6509篇
  2006年   6220篇
  2005年   5716篇
  2004年   5275篇
  2003年   4704篇
  2002年   4570篇
  2001年   6155篇
  2000年   4777篇
  1999年   3747篇
  1998年   2777篇
  1997年   2819篇
  1996年   2780篇
  1995年   2559篇
  1994年   2665篇
  1993年   2327篇
  1992年   2952篇
  1991年   2829篇
  1990年   2816篇
  1989年   2806篇
  1988年   2752篇
  1987年   2793篇
  1986年   2599篇
  1985年   3434篇
  1984年   3407篇
  1983年   2856篇
  1982年   3001篇
  1981年   2928篇
  1980年   2840篇
  1979年   3102篇
  1978年   3309篇
  1977年   3112篇
  1976年   3019篇
  1975年   2898篇
  1974年   2939篇
  1973年   2818篇
  1972年   1844篇
  1971年   1684篇
  1968年   2158篇
  1967年   2382篇
  1966年   2173篇
  1965年   1659篇
排序方式: 共有10000条查询结果,搜索用时 8 毫秒
51.
Solutions are presented for the impulsively started uniformstream and simple shear flows past a point source of momentum,which can be interpreted to describe the position and the widthof the front which transmits the knowledge of the singularitythrough a slightly viscous fluid. These understandings are thengeneralized to show that the front always moves with velocityslower than that of a (strictly monotonic) convective velocity,and also that its width always grows faster than with simplediffusion. Finally, a remarkably simple, exact expression is given forvorticity due to a simple shear flow past a point vortex.  相似文献   
52.
53.
We report on the shape transition from InAs quantum dashes to quantum dots (QDs) on lattice-matched GaInAsP on InP(3 1 1)A substrates. InAs quantum dashes develop during chemical-beam epitaxy of 3.2 monolayers InAs, which transform into round InAs QDs by introducing a growth interruption without arsenic flux after InAs deposition. The shape transition is solely attributed to surface properties, i.e., increase of the surface energy and symmetry under arsenic deficient conditions. The round QD shape is maintained during subsequent GaInAsP overgrowth because the reversed shape transition from dot to dash is kinetically hindered by the decreased ad-atom diffusion under arsenic flux.  相似文献   
54.
The effect of hydrostatic pressure on the structure of a plastic columnar discotic triphenylene has been investigated. The goal was to determine whether pressure can be used to modify electronic properties via changes in structural properties of columnar discotics to any significant extent. The findings are that (i) the intra- and inter-columnar distances are reduced in a nearly isotropic fashion, (ii) that the crystal sizes are reduced and (iii) that a transition takes place from a more highly ordered plastic columnar to a less ordered hexagonal columnar state with increasing pressure. The induced decrease of the molecular distances, amounting to 6% for pressures up to 17 kbar, are clearly too small to induce an appreciable modification of the electronic structure and thus opto-electronic properties.  相似文献   
55.
 The analytical solutions of equations describing the dynamics of distributed parameter systems are usually complicated in form and derivations and inconvenient to use for simulation and control system design. The liquid–liquid counter flow heat exchanger is an example of these disturbed parameter systems. An analytical solution of the dynamics of a symmetrically operated counter flow heat exchanger in the form of transfer function matrix is investigated in open-loop and close-loop conditions. The resulting non-linear model was linearized using perturbation approach. A feed-forward path controller to counteract at any disturbances in the boundary temperature and a non-interactive controller to decouple the outputs were implemented. Received on 22 February 2001 / Published online: 29 November 2001  相似文献   
56.
57.
We consider three one-dimensional quantum, charged and spinless particles interacting through delta potentials. We derive sufficient conditions which guarantee the existence of at least one bound state.  相似文献   
58.
59.
C Dufour  K Dumesnil  P H Mangin 《Pramana》2006,67(1):173-190
Rare earths exhibit complex magnetic phase diagrams resulting from the competition between various contributions to the magnetic energy: exchange, anisotropy and magnetostriction. The epitaxy of a rare-earth film on a substrate induces (i) a clamping to the substrate and (ii) pseudomorphic strains. Both these effects are shown to lead to modifications of the magnetic properties in (0 0 1)Dy, (0 0 1)Tb and (1 1 0)Eu films. In Dy and Tb films, spectacular variations of the Curie temperature have been evidenced. Additionally, Tb films exhibit a new large wavelength magnetic modulation. In Eu films, one of the helical magnetic domains disappears at low temperature whereas the propagation vectors of the other helices are tilted. The link between structural and magnetic properties is underlined via magnetoelastic models. Moreover, molecular beam epitaxy permits the growth of Sm in a metastable dhcp phase. The magnetic structure of dhcp Sm has been elucidated for the first time. In this review, neutron scattering is shown to be a powerful technique to reveal the magnetic structures of rare-earth films.  相似文献   
60.
The electro-optic response of ferroelectric smectic C* liquid crystals has been studied. Anomalous switching behaviour of such materials which possess a negative dielectric anisotropy has been reported. These materials show a minimum in response time at a sufficiently high field. We present results showing the dependency of this minimum upon spontaneous polarisation and the effect of AC bias. Calculations based upon the equation of motion of the director around the cone are presented which describe this effect and its dependence on the relative magnitudes of the spontaneous polarization and dielectric anisotropy of the material. Good agreement with the experimental results is found.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号