改进的遥感图像多种信息熵阈值分割算法

给出了一种新的图像信息量的表述方法,提出了五种基于信息熵的科学分割遥感图像的改进方法。用MATLAB对这些算法进行了实验仿真,并进行了算法性能优化。得出了各种不同算法的最佳阈值和耗时,并对它们进行了比较和分析。实验数据表明,新算法较以往的算法在分割效果和速度上都有明显的改善和提高。     

Optimization of Metamorphic InGaAs Quantum Wells on GaAs Grown by Molecular Beam Epitaxy

We investigate the molecular beam epitaxy growth of metamorphic InxGal-xAs materials （x up to 0.5） on GaAs substrates systematically. Optimization of structure design and growth parameters is aimed at obtaining smooth surface and high optical qualdty. The optimized structures have an average surface roughness of 0.9-1.8 nm. It is also proven by PL measurements that the optical properties of high indium content （55%） InGaAs quantum wells are improved apparently by defect reduction technique and by introducing Sb as a surfactant. These provide us new ways for growing device quality metamorphic structures on GaAs substrates with long-wavelength emissions.     

E&AMode:一种新的基于引擎粒子系统的图像渲染模式

本文分析了图像引擎粒子系统的传统实现方法的优劣,提出了一种称为发射源&影响者(E&AMode)的图像渲染模式,该模式实现了粒子系统模拟效果的多样性,粒子运动状态的动态性和结构设计的灵活性.本文介绍了新模式的基本结构、算法思想和实现方法.试验结果表明,发射源&影响者模式能够实现粒子属性的灵活设置,粒子运动状态的动态改变和模拟效果的多样性.     

基于均值约束满足度剪枝策略的高效序列模式挖掘算法

为了减少无用候选序列的生成,并使挖掘得到的序列模式符合用户要求,约束条件下的频繁序列模式挖掘已成为数据挖掘领域的一个新的重要研究方向.作为强约束形式的一种,均值约束目前仍然是基于约束的频繁序列模式挖掘的一个困难问题,其主要原因在于很难利用均值约束来进行序列模式挖掘中的剪枝.为此,提出了一种基于均值约束满足度剪枝策略,并且以前缀增长方法为基础设计了一个有效的频繁序列模式挖掘算法.通过分析并实验验证了该算法的时间效率和剪枝性能,结果表明,该方法是有效的.     

理论地震图的F-K算法的并行实现

对F-K算法进行了并行化改进,从而使其可以利用PC-Cluster或者并行计算机多节点计算的资源优势,提高计算速度.比较发现,并行后的计算速度大大提高,在计算时间较长的情况下,并行F-K算法的运算速度基本与处理器的个数成正比,为反演震源参数和地下结构提供了更为快捷的计算工具.     

基于粗糙集属性约简的文本分类

基于属性约简的方法,放弃以往复杂的规则匹配算法,提出将约简后的多种属性组进行析取,筛选特征项,并构造分类器.实验结果表明,此算法不仅简单,还能降低维数和提高分类结果.     

Noncontinuous Solitary Wave Solutions for Double sine-Gordon Equation

Using the tanh method and a variable separated ordinary difference equation method to solve the double sineGordon equation, we derive some new exact travelling wave solutions, especially a new type of noncontinuous solitary wave solutions. These noncontinuous solitary wave solutions are verified by using the conservation law theory.     

GaN MOS-HEMT Using Ultra-Thin A1203 Dielectric Grown by Atomic Layer Deposition

We report a GaN metal-oxide-semiconductor high electron mobility transistor （MOS-HEMT） with atomic layer deposited （ALD） Al2O3 gate dielectric. Based on the previous work [Appl. Phys. Lett. 86 （2005） 063501] of Ye et al. by decreasing the thickness of the gate oxide to 3.5nm and optimizing the device fabrication process, the device with maximum transconductance of 150mS/mm is produced and discussed in comparison with the result of lOOmS/mm of Ye et al. The corresponding drain current density in the 0.8-μm-gate-length MOS-HEMT is 800mA/mm at the gate bias of 3.0 V. The gate leakage is two orders of magnitude lower than that of the conventional A1GaN/GaN HEMT. The excellent characteristics of this novel MOS-HEMT device structure with ALD Al2O3 gate dielectric are presented.     

Gain Measurement and Anomalous Decrease of Peak Gain at Long Wavelength for InAs/GaAs Quantum-Dot Lasers

Mode gain spectrum is measured by the Fourier series expansion method for InAs/GaAs quantum-dot （QD） lasers with seven stacks of QDs at different injection currents. Gain spectra with distinctive peaks are observed at the short and long wavelengths of about 1210nm and 1300nm. For a QD laser with the cavity length of 1060μm, the peak gain of the long wavelength first increases slowly or even decreases with the injection current as the peak gain of the short wavelength increases quickly, and finally increases quickly before approaching the saturated values as the injection current further increases.     

Fe0对活性艳兰K-3R的还原降解效果

研究了活性染料活性艳兰K-3R在Fe0-H2O/O2,Fe0-H2O/N2,Fe0-H2O3种实验体系中被Fe0还原降解的效果.结果表明:氧气对Fe0活性艳兰K-3R的还原降解有促进作用;Fe0与活性艳兰K-3R的最佳反应条件是在Fe0-H2O/O2体系中,体系的pH值为碱性,反应时间为10~15 min;增大转速、染料初始质量浓度以及Fe粉加入量,染料的还原降解效率提高,且Fe粉重复使用3~4次不影响处理效果.