LD端抽运平直腔Nd:YVO4固态激光器的输出功率特性研究

对LD端抽运平直腔Nd:YVO₄固态激光器输出功率特性受激光器内在诸因素(热透镜效应、腔长、激活孔径等)的制约关系进行了研究.并用传播圆-变换圆图解分析方法给出了合理的解释，同时，对进一步提高其输出功率特性指出了方向. 关键词： 固体激光器 热透镜 变换圆 平直腔     

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??In this paper, by applying the moment inequality for asymptotically almost negatively associated (AANA, in short) random sequence and truncated method, the equivalent conditions of complete moment convergence of the maximum partial for weighted sums of AANA random variables are obtained without assumptions of identical distribution, which generalize and improve the corresponding ones of{15},{16} and {17}, respectively.     

挖坑机钻头主轴纵向振动系统模型的建立与控制

首先利用弹性杆理论和H am ilton变分原理建立了挖坑机钻头主轴及钻尖在工作过程中由于外激励的作用使钻尖与土壤互相作用而产生纵向振动的动力学模型,同时给出边界条件和初始条件.其次通过把系统外激励函数当作控制变量,利用Banach空间几何性质证明了此系统存在唯一最优控制元.     

ZnSe/SiO2复合薄膜光学常数与荧光光谱的研究

采用溶胶-凝胶工艺与原位生长技术，制备了ZnSe/SiO₂复合薄膜.X射线衍射分 析表明薄膜中ZnSe晶体呈立方闪锌矿结构.X射线荧光分析结果显示薄膜中Zn与Se摩尔比为1 ∶1.01—1∶1.19.利用场发射扫描电子显微镜观察了复合薄膜的表面形貌，结果表明复合薄 膜表面既存在尺寸约为400nm的ZnSe晶粒，也存在尺寸小于100nm的ZnSe晶粒.利用椭偏仪测 量了薄膜椭偏角Ψ，Δ与波长λ的关系，采用Maxwell-Garnett有效介质理论对薄膜的光学 常数、厚度、气孔率、ZnS 关键词： 2复合薄膜')" href="#">ZnSe/SiO₂复合薄膜 光学性质 椭偏光度法 荧光光谱     

An Extension Landau-Lifshitz Model in Studying Soft Ferromagnetic Films

In this paper, we propose a model in studying soft ferromagnetic films, which is readily accessible experimentally. By using penalty approximation and compensated compactness, we prove that the dynamical equation in thin film has a local weak solution. Moreover, the corresponding linear equation is also dealt with in great detail.     

Magnetic,structural and electrical properties of ordered and disordered Co50Fe50 films

Co₅₀Fe₅₀ films with thickness varying from 100 to 500 Å were deposited on a glass substrate by sputtering process, respectively. Two kinds of CoFe films were studied: one was the as-deposited film, and the other the annealed film. The annealing procedure was to keep the films at 400 °C for 5 h in a vacuum of 5×10⁻⁶ mbar. From the X-ray study, we find that the as-deposited film prefers the CoFe(1 1 0) orientation. Moreover, the body-centered cubic (bcc) CoFe(1 1 0) line is split into two peaks: one corresponding to the ordered body-centered tetragonal (bct) phase, and the other, the disordered bcc phase. After annealing, the peak intensity of the ordered bct phase becomes much stronger, while that of the disordered bcc phase disappears. The annealing has also caused the ordered CoFe(2 0 0) line to appear. When the amount of the ordered bct phase in Co₅₀Fe₅₀ is increased, the saturation magnetization (M_s) and coercivity (H_c) become larger, but the electrical resistivity (ρ) decreases. From the temperature coefficient of resistance (TCR) measurement, we learn that the bct grains in the CoFe film start to grow at temperature 82 °C.     

Fission Barrier for ^240Pu in the Quadrupole Constrained Relativistic Mean Field Approach

The fission barrier for ^240pu is investigated beyond the second saddle point in the potentiM energy surface by the constrained relativistic mean field method with the newly proposed parameter set PK1. The microscopic correction for the centre-of-mass motion is essentiM to provide the correct potential energy surface. The shell effects that stabilize the nuclei against the fission is also investigated by the Strutinsky method. The shapes for the ground state, fission isomer and saddle-points, etc, are studied in detail.     

掺铒光纤放大器中上转换过程的影响

掺杂浓度的提高影响了掺铒光纤放大器(EDFA)的性能,对经典Giles模型提出了新的要求。首先研究了高掺杂下铒离子距离较小引起的上转换过程的机理,通过优化速率方程模型分析了上转换过程对EDFA的影响,得出了在泵浦光和信号光远远大于ASE光的假设下泵浦光和信号光沿光纤长度变化的近似表达式,并将该近似分析解与解析解进行了比较。仿真结果表明上转换过程会降低随光纤传输的信号光和泵浦光,影响EDFA的放大性能,并得出了当掺铒浓度大于2.95×1025m-3时,上转换过程的影响不能忽略的结论。     

SiO2-羟基表面上金属原子的第一性原理研究

采用第一性原理方法研究了SiO2-羟基表面上几种金属原子的吸附性质,发现In和Ga在SiO2-羟基表面上的结合很弱,而Fe,Co,Ni在该表面上与Si,O形成强的化学键.等势能面和扩散势垒计算表明In(Ga)的扩散激活能只有0.1-0.3 eV,表明这两种原子容易在表面上扩散.这些结果可以定性地解释纳米合成中的一些实验现象.     

磁场对四端量子波导中电子输运性质的影响

采用模匹配方法，研究了非均匀磁场下开放的四端量子波导中的电子输运性质. 结果表明，从一端入射的电子可以透射到两个与之垂直的输出端和一个与之平行的输出端. 在没有外加磁场的情况下，两个垂直输出端的输运概率是相同的，但垂直端与水平端的输运概率不同；在外加磁场下，由于磁边缘态效应，两个垂直输出端的输运概率也有着相当大的差别. 通过施加不同的磁场，我们能获得丰富的电子输运结构，如台阶，宽谷，尖峰等；通过调节磁场的大小和比例以及结构参数可控制该量子结构在各输出端的输运概率. 关键词： 电子输运 介观体系 磁效应