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981.
M. Missous C. Mitchell J. Sly K. T. Lai R. Gupta S. K. Haywood 《Physica E: Low-dimensional Systems and Nanostructures》2004,20(3-4):496
Highly strained quantum cascade laser (QCL) and quantum well infrared photodetector (QWIPs) structures based on InxGa(1−x)As−InyAl(1−y)As (x>0.8,y<0.3) layers have been grown by molecular beam epitaxy. Conditions of exact stoichiometric growth were used at a temperature of 420°C to produce structures that are suitable for both emission and detection in the 2–5 μm mid-infrared regime. High structural integrity, as assessed by double crystal X-ray diffraction, room temperature photoluminescence and electrical characteristics were observed. Strong room temperature intersubband absorption in highly tensile strained and strain-compensated In0.84Ga0.16As/AlAs/In0.52Al0.48As double barrier quantum wells grown on InP substrates is demonstrated. Γ–Γ intersubband transitions have been observed across a wide range of the mid-infrared spectrum (2–7 μm) in three structures of differing In0.84Ga0.16As well width (30, 45, and 80 Å). We demonstrate short-wavelength IR, intersubband operation in both detection and emission for application in QC and QWIP structures. By pushing the InGaAs–InAlAs system to its ultimate limit, we have obtained the highest band offsets that are theoretically possible in this system both for the Γ–Γ bands and the Γ–X bands, thereby opening up the way for both high power and high efficiency coupled with short-wavelength operation at room temperature. The versatility of this material system and technique in covering a wide range of the infrared spectrum is thus demonstrated. 相似文献
982.
J. R. Lindle W. W. Bewley I. Vurgaftman J. R. Meyer J. L. Johnson M. L. Thomas W. E. Tennant 《Physica E: Low-dimensional Systems and Nanostructures》2004,20(3-4):558
A self-referencing, optical modulation technique was used to measure the negative luminescence efficiencies of an array of mid-wave infrared HgCdTe photodiodes with cutoff wavelength 4.6 μm as a function of sample temperature. The internal efficiency at a wavelength of 4 μm was 93% at 295 K, and nearly independent of temperature in the 240–300 K range. This corresponds to an apparent temperature reduction >50 K at room temperature and >30 K at 240 K. Moreover, the reverse-bias saturation current density was only 0.13 A/cm2. The measured transmission and emission spectra were simulated using empirical HgCdTe absorption formulas from the literature. 相似文献
983.
984.
H. Akimune T. Yamagata S. Nakayama M. Fujiwara K. Fushimi K. Hara K. Y. Hara K. Ichihara K. Kawase K. Matsui K. Nakanishi A. Shiokawa M. Tanaka H. Utsunomiya M. Yosoi 《Physics of Atomic Nuclei》2004,67(9):1721-1725
Trinucleon molecular structures in 6He and 6Be were investigated by using the 6Li(7Li, 7Be)6He reaction at 455 MeV and 6Li(3He, t)6Be reaction at 450 MeV, respectively. Binary decays into t + t from a broad state at E x =18.0±1.0 MeV in 6He and into 3He + 3He from one at E x =18.0±1.2 MeV in 6Be, respectively, were observed by measuring trinucleon cluster decays in coincidence with reaction particles. The branching ratios for binary decay were estimated to be about 0.7 for 6He and 6Be. These large branching ratios show that a trinucleon cluster state exists as an isobaric partner around E x =18 MeV in 6He and 6Be. 相似文献
985.
A. G. Milekhin A. I. Nikiforov M. Yu. Ladanov O. P. Pchelyakov S. Schulze D. R. T. Zahn 《Physics of the Solid State》2004,46(1):92-96
This paper reports on the results of resonant Raman scattering investigations of the fundamental vibrations in Ge/Si structures with strained and relaxed germanium quantum dots. Self-assembled strained Ge/Si quantum dots are grown by molecular-beam epitaxy on Si(001) substrates. An ultrathin SiO2 layer is grown prior to the deposition of a germanium layer with the aim of forming relaxed germanium quantum dots. The use of resonant Raman scattering (selective with respect to quantum dot size) made it possible to assign unambiguously the line observed in the vicinity of 300 cm?1 to optical phonons confined in relaxed germanium quantum dots. The influence of confinement effects and mechanical stresses on the vibrational spectra of the structures with germanium quantum dots is analyzed. 相似文献
986.
Electron microscopy is used to study changes in the dislocation structure of high-purity rolled (001)[110] tungsten single crystals during short-term high-temperature annealings. The effects of the annealing temperature and time on the formation of low-angle boundaries are investigated. Local defects, which are similar to those detected earlier upon annealing in the structure of molybdenum single-crystal ribbons, are found to form and dissociate upon annealing. These defects are concluded to have a dislocation nature. 相似文献
987.
It is found that, when a bismuth crystal is subjected simultaneously to concentrated loading and a dc magnetic field, the magnetoplastic effect manifests itself as an abrupt decrease in the average length of wedge twins on the (111) cleavage plane (and, hence, as a decrease in the total twinned volume of the crystal) as a threshold value of the magnetic field is reached. However, the magnetic field stimulates glide deformation, which is indicated by an increase in the size of dislocation rosettes. The microhardness of a crystal varies smoothly and tends to increase with increasing magnetic field. The last phenomenon is accounted for by hardening of the crystal under the indenter in the presence of a magnetic field, because several slip systems become operative. 相似文献
988.
In terms of two-dimensional dislocation-disclination dynamics, a theoretical model is developed to describe the decay of a low-angle tilt boundary in a deformed nanocrystalline material under the action of an externally applied elastic stress and of the elastic field of a neighboring decayed boundary. The critical external stresses are calculated at which the boundary decays and the dislocations making up this boundary either are trapped by the boundary that decayed earlier or break away from both boundaries. The decay of a low-angle tilt boundary is shown to result in a substantial decrease in the critical decay stresses for the neighboring boundaries, which can cause an avalanche-like chain decay of low-angle boundaries yielding high-density ensembles of mobile dislocations capable of carrying substantial plastic deformations and of forming shear bands in deformed nanocrystalline materials. 相似文献
989.
Nanostructure diamond (NSD) film with a hardness as high as 70 GPa and an average surface roughness of 10 nm has been synthesized by the two-step negative substrate bias method combined with post-growth Ar-H2 plasma irradiation. The Ar-H2 plasma irradiation has been confirmed to improve the uniformity of grain size and shape and increase the hardness of the NSD film. 相似文献
990.
V. D. Kulikov 《Technical Physics》2004,49(10):1368-1374
The flow of the conduction current in a metal-insulator-metal structure under X-ray and optical excitation is considered.
Accumulation of positive charge at the negative electrode in the KBr and CsI crystals is studied. The method of discharge
currents after the X-ray and optical excitation is suggested for estimation of the near-surface charge. It is shown that the
values of charge transported by the conduction current and those determined from the measured discharge-current signal are
in satisfactory agreement. The lifetimes of near-surface charges of holes and anionic vacancies and the values of the electric-field
strength at the metal-insulator interface are estimated. It is assumed that electroneutrality of the sample is established
owing to the motion of electrons from the surface into the bulk over dislocations. 相似文献