Density and uniqueness in percolation

Two results on site percolation on thed-dimensional lattice,d1 arbitrary, are presented. In the first theorem, we show that for stationary underlying probability measures, each infinite cluster has a well-defined density with probability one. The second theorem states that if in addition, the probability measure satisfies the finite energy condition of Newman and Schulman, then there can be at most one infinite cluster with probability one. The simple arguments extend to a broad class of finite-dimensional models, including bond percolation and regular lattices.     

The effect of the relative position of the bandgap with respect to laser wavelength on the behaviour of DFWM in semiconductor-doped glasses

Degenerated four-wave mixing (DFWM) was realised in five commercial semiconductor-doped glasses (Corning CS3–66, CS3–67, CS3–68, CS3–69, CS3–70). The reflectivity obtained for each glass seems very dependent on the energy excess (E=hv–E _g) and relatively independant on l, the product of the absorption coefficient () by the sample thickness (l). The decay time of the DFWM signal was measured for each glass. The relaxation was found to be different when the photon energy is under or over the gap.     

Semi-insulating electrical properties of undoped inp after heat treatment in a phosphorus atmosphere

Nominally undoped InP wafers have been annealed in a phosphorus atmosphere under a pressure of about 5 bar at temperatures of 900 °C for about 80 h. It was found that the electrical properties of the samples changed considerably after this treatment. A room temperature resistivity of up to 2×10⁷cm (semi-insulating behaviour) was obtained in the bulk of the samples. The resistivity finally obtained depends on the starting carrier concentration of the untreated samples. The Hall coefficient and Hall mobility have been measured up to 600 °C. The results can be interpreted in terms of a deep electronic level (E _A=0.63 ... 0.65 eV below the conduction band). The Hall coefficient was always found to be negative resulting in a Hall mobility of 1.4 to 4.9×10³ cm²/Vs. The highest resistivity in nominally undoped bulk InP so far reported in the literature [1] was =3.6 × 10⁵cm. Therefore, this paper demonstrates for the first time that a really semi-insulating behaviour of >10⁷ cm can be achieved for bulk InP with the purity of nominally undoped material (10¹⁵ to 10¹⁶cm^–3).     

Speeding-up and scaling of domain-wall relaxation nearT c of a uniaxial ferromagnet

The dynamic susceptibility () measured between 10 Hz and 10 MHz on different GdCl₃-ellipsoids (T _c=2.21 K) reveals a completely reversible motion of the domain walls. Taking into account the contribution of the fast adiabatic intradomain magnetization to the nearly Debye-shaped (), we determine for the first time the kinetic Onsager coefficientL _d of the domain wall relaxation of a ferromagnet. Approaching the CurietemperatureL _d speeds up critically, which by a novel simple relaxational model can be related to the increasing width (=correlation length) of linear Bulaevskii-Ginzburg domain-walls and to the shrinking domain period. The reduction ofL _d by an external field can be represented by a universal scaling function, and within the same dynamical model, this effect is ascribed to the increase of the domain period, predicted for a bubble phase. However, the effect of sample size onL _d is much smaller than expected.     

The absorption of pulsed CO2-laser radiation by ethylene at total pressures from 25 to 3000 Torr

The absorption of pulsed CO₂-laser radiation by ethylene has been measured at total pressures from 25 to 3000 Torr, using the P(12) and P(14) lines in the 10.6 m band, with incident fluences from 0.1 to 0.7 J/cm². Marked deviations from the Beer-Lambert absorption law were observed, with the effective absorption coefficient varying with pressure, fluence, absorption path-length and the addition of non-absorbing gas. Pressure broadening of the rotational lines of the ethylene absorption spectrum was shown to be the major cause of these deviations, together with lesser effects which can be attributed to the rise in temperature of the absorbing gas during the laser pulse.     

Valence change of europium in the Eu(Ir1−x Pd x )2Si2 silicides

Eu(Ir_1–x Pd _x )₂Si₂ solid solutions which exist only for 0x0.125 and 0.75x1 crystallize in the tetragonal ThCr₂Si₂-type structure. X-ray diffraction data, magnetic susceptibility and¹⁵¹Eu Mössbauer measurements suggest that these compounds can be characterized as homogeneous mixed valence systems. At room temperature and for 0x0.125, the europium valence decreases asx increases. For 0.75x1, a sharp continuous valence transition from Eu²⁺ to Eu³⁺ occurs near 48 K, 54 K and 78 K forx=0.75, 0.81 and 0.94 respectively. These valence changes are discussed in relation with the Eu–(Ir, Pd) interatomic distance.     

Complementary influence of electric and magnetic fields on the sample voltage oscillations ofP-type ultrapure germanium

We report on a previously not observed behaviour of oscillations of the voltage over a hyperpure germanium sample, when increasing the sample current from 0.05 to 13 A, for a number of transverse magnetic fields ranging from 697 to 1746 gauss. The sample temperature was 7.54 K±0.02 K. For each magnetic field the first observed peaks in the frequency spectrum of the sample voltage go to chaos by the period-doubling route and simultaneously shift to lower frequencies (first scenario). Superimposed upon this chaotic spectrum a new peak emerges, which again shifts to lower frequencies with increasing sample current (second scenario). A complementary effect of the sample current and the magnetic field is detected for four properties: firstly, the sudden onset of high resistance in the current versus voltage diagram, secondly, the transition between the two frequency scenarios described above, thirdly the presence of certain frequencies in the sample voltage spectra and fourthly the occurrence of an amplitude maximum for the principal frequency of the first scenario. It is shown that the first two transitions are interrelated.     

Magnetooptical effects in bismuth-containing ferrite-garnet films

We present results of magnetooptical investigations of bismuth-containing ferrite-garnet films with the easy axis of magnetization parallel to the specimen surface. Measurements were conducted for incident light with energies in the range 1.5–3.2 eV for transverse [equatorial Kerr effect (EKE)] and for longitudinal [meridional intensity effect (MIE)] magnetizations of thin-layer specimens. It is shown that the EKE differs from zero when the films are opaque, and it is established that the EKE peak in the region 2.8 eV increases with increasing bismuth concentration. For longitudinal magnetization, conditions for observing magnetooptical interference were realized. The experimental curves agree well with the theoretical ones.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 10–14, November, 1989.     

Investigation of the character of the exchange interaction in the system Hg1−xMnxSe

A new method is proposed for determining the magnetic characteristics (magnitude and sign of the exchange interaction energy and the average size of clusters of magnetic ions) of dilute solid solutions of semimagnetic semiconductors at low temperatures based on oscillation measurements. The method makes it possible to find the magnetic characteristics of the indicated systems at temperatures between the point of the transition into the spin glass state and the temperature corresponding to the characteristic binding energy of magnetic atoms in clusters, for which standard methods based on the measurement of the magnetic susceptibility are not effective. The method is used to study the character of the exchange interaction in the system of solid solutions Hg_1–xMn_xSe as a function of their composition as well as under conditions of hydrostatic compression. To this end the oscillations of the magnetoresistance (Shubnikov-de Haas (SH) effect) in single-crystalline samples of Hg_1–xMn_xSe in the region of compositions 0.001 x 0.23 in magnetic fields H up to 65 kOe at temperatures T = (0.4–20) K and pressures up to 16 kbar were studied.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 29–39, November, 1989.