多维随机大与SNBU多维寿命分布类

本文从多维随机序──随机大入手，定义了多维寿命分布类ＳＮＢＵ，证明了该定义与文［１］中的定义等价，研究了其部分性质。     

单取代香豆素的~（13）CNMR化学位移与电荷密度、跃迁能与Hammett常数关系的研究

用ＨＭＯ法研究了香豆素及一些４－、５－、６－、７－及８－单取代香豆素类化合物，发现这些化合物的￣（１３）ＣＮＭＲ化学位移与π－电荷密度之间有很好的线性关系。此外，跃迁能与Ｈａｍｅｔｔ常数之间也有较好的线性关系。表６．参８。     

因素空间理论与知识表示的数学框架（Ⅷ）─—变权综合原理

本文是文［１－７］的继续，研究变权综合问题，从确定变权的经验公式入手引出了变权原理，给出了变权的公理化定义，讨论了与之有关的均衡函数及其梯度向量。     

数据域与微机应用系统

本文着重描述在数据转换过程中如何把数据信息按区域进行细分，以弄清数据信息的性质，进而确定一个最优数据通路，建立高效应用系统。     

高师院校书刊阅览服务的优化与高素质人才培育

论述了高师图书馆实施综合素质教育的意义和挑战,提出了共建具有专业特色的教育基地、优化整合教育资源、全面推进素质教育等培养高素质人才,落实人才强国战略的新举措。     

An investigation of the Al2O3-CdSe interface in accumulation

The Al₂O₃−CdSe interface of a thin-film transistor is investigated in the frequency range 30 Hz-30 kHz under weak depletion and accumulation. The surface states are, most likely, located in the insulator Al₂O₃ with a concentration varying from 4·10¹⁸ to 10¹⁹ cm⁻³ eV⁻¹. The surface states have a negligible influence on the thin-film transistor operation.     

All retraction operators on a complete lattice form a complete lattice

H. Crapo raised in 1982 the following problem: IfP is a complete lattice, is Retr (P) a complete lattice? here Retr (P) denotes the set of all retraction operators onP with the pointwise order, that is,f≤g in Retr (P) ifff(x)≤g(x) for everyx inP. An affirmative answer will be given in the present paper.     

An approach combining the Ritz-Galerkin and finite difference methods

The nonconforming combination of Ritz-Galerkin and finite difference methods is presented for solving elliptic boundary value problems with singularities. The Ritz-Galerkin method is used in the subdomains including singularities, the finite difference method is used in the rest of the solution domain. Moreover, on the common boundary of two regions where two different methods are used, the continuity conditions are constrained only on the nodes of difference grids. Theoretical analysis and numerical experiments have shown that average errors of numerical solutions and their generalized derivatives can reach the convergence rate O(h^2-δ), where h is the mesh spacing of uniform difference grids, and δ is an arbitrarily small, positive number. This convergence rate is better than O(h), obtained by the nonconforming combination of the Ritz-Galerkin and finite element methods.     

Scanning tunnelling microscope studies of growth of RuO2（110） thin layer on Ru（0001）

This paper reports that the growth of RuO_x(110) thin layer growth on Ru(0001) has been investigated by means of scanning tunnelling microscope (STM). The STM images showed a domain structure with three rotational domains of RuO_x(110) rotated by an angle of 120℃. The as-grown RuO_x(110) thin layer is expanded from the bulk-truncated RuO_x(110) due to the large mismatch between RuO_x(110) and the Ru(0001) substrate. The results also indicate that growth of RuO_x(110) thin layer on the Ru(0001) substrate by oxidation tends first to formation of the Ru-O (oxygen) chains in the [001] direction of RuO_x(110).     

大学物理课程网络辅助教学系统的构建与应用

本文介绍了上海交通大学大学物理课程网络辅助教学系统的设计思想、整体结构和主要的功能模块，概述了运用网络辅助教学系统实施“课堂教学＋网络辅助教学”：这种教学模式的应用情况．