Effects of the H-bond donor structure on the properties of supramolecular side chain liquid crystalline polymers based on poly(3-carboxypropylmethylsiloxane-co-dimethylsiloxane)s and stilbazoles

Supramolecular side chain liquid crystalline polymers (SCLCPs) based on poly(3-carboxypropylmethylsiloxane-co-dimethylsiloxane) (PSIX, X=100, 76, 60, 41 or 23, denoting the mole percentage of 3-carboxypropylmethylsiloxane unit in the polymer) and stilbazole derivatives have been obtained through intermolecular hydrogen bonding (H-bonding) interactions between the carboxylic acid and the pyridyl moieties. The formation of H-bonding and self-assembly results in the formation of new mesogenic units, in which H-bonds function as molecular connectors. FTIR shows the existence of H-bonding in the complexes. The polymeric complexes behave as single component liquid crystalline polymers and exhibit stable and enantiotropic mesophases. The liquid crystalline properties of the supramolecular SCLCPs were studied using differential scanning calorimetry, polarizing optical microscopy and X-ray diffraction, and were found to exhibit smectic A phases with focal-conic textures. The thermal stability of the SCLCP increases on increasing the carboxylic acid content in the polysiloxane and the concentration of the stilbazole derivative in the complex. However, the thermal stability decreases on increasing the chain length of the stilbazole derivative. The crystal phase was not formed even on cooling to the glass transition temperature of the polymeric complex.     

多元整系数多项式因式分解的一种理论和算法

本文将ｔ（ｔ是大于２的整数）元整系数多项式看成为系数为ｔ－２元整系数多项式的二元多项式，建立了多元整系数多项式因式分解的一种新理论，进而得到了分解多元整系数多项式的一个有力的算法。     

多子阵子空间拟合波达方向估计

提出了考虑阵元互耦的子空间拟合波达方向估计方法。用一带状、对称Toeplitz矩阵对均匀线阵的互耦矩阵建模。根据互耦矩阵自由度,去除部分两边阵元,研究了子空间拟合算法中ESPRIT算法的理论性能。在大快拍的情况下,均匀线阵的MCLS-ESPRIT算法的角度估计误差是一个零均值的联合高斯分布,同时给出了分布的协方差表达式。由方差的数值计算可知,在阵元数和信源数确定的情况下,存在估计标准差最小的子阵;与不存在互耦的理想情况相比,除了估计标准差少许增加外,性能接近。本文的方法已应用于高分辨率测深侧扫声呐,获得了好结果。在声呐阵阵元数增加的条件下,用本文的方法,能抑制均匀线阵的互耦的影响。     

一种实现光源与光纤耦合的方法

本文介绍了一种用显微镜筒与透镜构成的光学系统来实现光源与光纤耦合的方法。该方法具有光路系统小巧方便、耐用、耦合效率高等优点。     

Sulfonated poly(aryl ether ether ketone ketone)s containing fluorinated moieties as proton exchange membrane materials

A series of sulfonated poly(aryl ether ether ketone ketone)s statistical copolymers with high molecular weights were synthesized via an aromatic nucleophilic substitution polymerization. The sulfonation content (SC), defined as the number of sulfonic acid groups contained in an average repeat unit, could be controlled by the feed ratios of monomers. Flexible and strong membranes in sodium sulfonate form could be prepared by the solution casting method, and readily transformed to their proton forms by treating them in 2 N sulfuric acid. The polymers showed high T_gs, which increased with an increase in SC. Membranes prepared from the present sulfonated poly(ether ether ketone ketone) copolymers containing the hexafluoroisopropylidene moiety (SPEEKK‐6F) and copolymers containing the pendant 3,5‐ditrifluoromethylphenyl moiety (SPEEKK‐6FP) had lower water uptakes and lower swelling ratios in comparison with previously prepared copolymers containing 6F units. All of the polymers possessed proton conductivities higher than 1 × 10^?2 S/cm at room temperature, and proton conductivity values of several polymers were comparable to that of Nafion at high relative humidity. Their thermal stability, oxidative stability, and mechanical properties were also evaluated. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 2299–2310, 2006     

Trivariate Cr Polynomial Macroelements

Trivariate C^r macroelements defined in terms of polynomials of degree 8r + 1 on tetrahedra are analyzed. For r = 1,2, these spaces reduce to well-known macroelement spaces used in data fitting and in the finite-element method. We determine the dimension of these spaces, and describe stable local minimal determining sets and nodal minimal determining sets. We also show that the spaces approximate smooth functions to optimal order.     

Copper diffusion in Ti-Si-N layers formed by inductively coupled plasma implantation

Ternary Ti-Si-N refractory barrier films of 15 nm thick was prepared by low frequency, high density, inductively coupled plasma implantation of N into Ti_xSi_y substrate. This leads to the formation of Ti-N and Si-N compounds in the ternary film. Diffusion of copper in the barrier layer after annealing treatment at various temperatures was investigated using time-of-flight secondary ion mass spectrometer (ToF-SIMS) depth profiling, X-ray diffractometer (XRD), field emission scanning electron microscopy (FESEM), energy dispersive X-ray (EDX) and sheet resistance measurement. The current study found that barrier failure did not occur until 650 °C annealing for 30 min. The failure occurs by the diffusion of copper into the Ti-Si-N film to form Cu-Ti and Cu-N compounds. FESEM surface morphology and EDX show that copper compounds were formed on the ridge areas of the Ti-Si-N film. The sheet resistance verifies the diffusion of Cu into the Ti-Si-N film; there is a sudden drop in the resistance with Cu compound formation. This finding provides a simple and effective method of monitoring Cu diffusion in TiN-based diffusion barriers.     

NFZ-10工业辐照电子直线加速器

研制的电子直线加速器ＮＦＺ－１０的辐照加工能力相当于３０ＰＢｑ的６０Ｃｏ源，电子束能量为４～１２ＭｅＶ，平均束功率为３ｋＷ，扫描宽度为１ｍ，能量不稳定度≤±０．５％，束流不稳定度≤±０．６％，扫描不均匀度≤±２．５％。ＮＦＺ－１０加速器已被用于辐照各种电力半导体器件，一年多来运行稳定可靠并获得较好的经济效益。