ZnO-Si不同退火条件对生长ZnSe薄膜的影响

研究了作为缓冲层的ZnO薄膜在不同的退火时间、退火温度下退火对Si衬底上生长ZnSe膜质量的影响。当溅射有ZnO膜的Si(111)衬底的退火条件变化时，从X射线衍射谱（XRD）和光致发光谱（PL）中可见，ZnSe(111)膜的晶体质量有较大的变化。变温的PL谱表明，Si衬底上生长的具有ZnO缓冲层的ZnSe膜的近带边发射峰起源于自由激子发射。     

贝壳固硫过程热重研究

利用LCT-2型热天平对贝壳的固硫反应过程进行了实验研究。探讨了贝壳在含SO2模拟烟气气氛下的固硫能力、温度特性及SO2浓度对其钙利用率的影响特性;并利用JXA-840扫描电镜实验观察了贝壳与石灰石微观结构特性的主要差别。结果表明:贝壳具有良好的微观结构特性和固硫反应活性,其最佳固硫反应温度比石灰石高出约100℃,大部分贝壳更适合作900~1000℃温度下的燃煤固硫剂。     

城市垃圾与煤在CFBC试验台上的混烧试验

城市垃圾的焚烧处理一直是人们关注的研究领域。本文详细报告了一种城市垃圾与劣质煤在0.15兆瓦CFBC试验台上的混烧试验。试验结果表明,城市垃圾与劣质煤在循环流化床中的混烧可以很好地满足稳定和高温燃烧的要求,通过添加石灰石等含钙物料可以有效地在燃烧过程巾控制SO2、HCl和二(?)英类污染物的生成。     

可压稠密气固两相流动过程的模拟计算

基于稠密气体分子运动论和颗粒动理学,建立可压稠密气固两相流动模型。采用梯度模拟来考虑气相可压缩性对气相湍流的影响。模拟计算表明气固两相射流速度沿轴向和径向减小,颗粒浓度下降。气固两相射流具有高的颗粒温度,呈现强烈的气固两相湍流流动特性。     

90Mo电磁跃迁几率的测量

利用束流能量为116MeV的⁵⁹Co(³⁵Cl,2p2n)⁹⁰Mo反应布居⁹⁰Mo的高自旋态.用10台反康普顿HPGe探测器组成的探测阵列进行γγ符合测量.通过多普勒展宽峰的形状分析测定⁹⁰Mo高自旋态的寿命.在正宇称衰变系观察到增强的M1跃迁,推断I=13以上是扁椭形变.负宇称高自旋态具有大的B(E2)值,并随自旋增大而起伏变化.正、负宇称态之间的跃迁显示增大的E1跃迁,似有八极关联的可能.但是,⁹⁰Mo并不处在理论预言的存在八极形变的核区内.     

用三源热共蒸法制备的二十厘米长涂层导体及其显微结构

用真空三源热共蒸发法制备了二十厘米长的涂层导体,其宽度为1厘米, 超导层宽度为0.9 厘米,厚度为600纳米.使用直流四引线法测试,导体在77K时的临界电流大于120安培,相应的临界电流密度大于每平方厘米220万安培.表征电流-电压曲线超导转变陡峭度的n值为35.显微结构观察表明其膜层显微形貌与单晶衬底上的薄膜极其相似.X射线衍射研究表明超导薄膜的相成分纯,面内FWHM为Δφ=6.23°,面外FWHM为Δω=3.84°,表明涂层的优良织构.在此文章将详细报告导体的制备和显微结构及物理测试结果.     

Convection-Dominated Accretion Flows with Radiative Cooling

By numerically solving the set of basic equations describing black hole accretion flows with low accretion rates, we show that although the dynamical structure of these flows is essentially unaffected by radiative processes in comparison with the case in which the radiation is not considered, the radiative cooling can be more important than the advective cooling in the flow＇s convection-dominated zone, and this result may have implications to distinguish observationally convection-dominated accretion flows from advection-dominated accretion flows.     

Structure Stability of LaAlO3 Thin Films on Si Substrates

A series of amorphous and single-crystalline LaAlO3 （LAO） thin films are fabricated by laser molecular-beam epitaxy technique on Si substrates under various conditions of deposition. The structure stability of the LAO films annealed in high temperature and various ambients is studied by x-ray diffraction as well as high-resolution transmission electron microscopy. The results show that the epitaxial LAO films have very good stability, and the structures of amorphous LAO thin films depend strongly on the conditions of deposition and post-annealing. The results reveal that the formation of LAO composition during the deposition is very important for the structure stability of LAO thin films.     

Light Irradiation through Small Particles and Its Applications for Surface Nanostructuring in Near Field

We investigate the light scattering through small particles and its applications in nanostructuring, such as nanobumping, nanopatterning and dry laser cleaning. The theoretical calculation based on Mie theory provides an exact solution for sphere cavity resonance and plasmon resonance, which are two mechanisms for dielectric and metallic particles assisted surface nanostructuring in near field. The experimental results indicate that nanobumps on glass surface and subwavelength holes array on silicon surface can be formed without cracks with the self-assembly of 1 μm silica particle mask under laser irradiation. It is also found that the scattering wave by 40 nm gold particles can propagate 200 times away in terms of particle radius as recorded by photoresist under the UV light irradiation. Meanwhile, dry laser cleaning of 40nm gold particle on silicon wafer is demonstrated at plasmonic resonance frequency. The total cleaning efficiency is estimated to be 80%.     

丙酮CO键在溶剂中频移变化的几种理论模型比较

测量了丙酮在16种溶剂中CO键的伸缩振动拉曼光谱,并且在Gaussian03程序下采用自恰反应场方法(SCRF)对丙酮在各种溶剂中的拉曼光谱进行了理论计算。用三种溶剂模型的电子给体-受体模型、Kirkwood模型和自恰反应场模型对实验结果进行了分析比较,结果表明Gutmann提出的电子给体-受体模型与实验结果符合的最好,而自恰反应场理论结果要好于Kirkwood模型。通过对三种模型的机理进行分析,得出给体-受体模型在解释电负性比较强的分子键振动光谱比较好,自恰反应场模型不但考虑了介电常数ε,而且考虑了分子大小、构型等因素的影响,模型复杂,计算量比较大,但是因为考虑的因素比较多,所以与实验结果也符合的比较好,而Kirkwood模型的主要参数为ε,模型简单,计算简便,能大致反映频移的趋势,说明介电常数是影响频移的一个主要因素。