A Pyrene-based Highly Selective Turn-on Fluorescent Chemosensor for Iron(III) Ions and its Application in Living Cell Imaging

A new pyrene-based chemosensor (1) exhibits excellent selectivity for Fe³⁺ ions over a wide range of tested metal ions Ag⁺, Ca²⁺, Cd²⁺, Co²⁺, Cu²⁺, Fe²⁺, Hg²⁺, K⁺, Mg²⁺, Mn²⁺, Ni²⁺, Pb²⁺, and Zn²⁺. The binding of Fe³⁺ to chemosensor 1 produces an emission band at 507 nm due to the formation of a Py-Py* excimer that is induced by Fe³⁺-binding. The binding ratio of 1-Fe³⁺ was determined to be 1:1 from a Job plot. The association constant of 1-Fe³⁺ complexes was found to be 1.27?×?10⁴ M^?1 from a Benesi-Hildebrand plot. In addition, fluorescence microscopy experiments show that 1 can be used as a fluorescent probe for detecting Fe³⁺ in living cells.     

The domination of g-evaluations and Choquet evaluations

In this paper, we obtain that a convex g evaluation can be dominated by the corresponding Choquet evaluation if and only if g has the form g(t, y, z) = μ t y + h(t, z), where h(t, z) is positively homogeneous and subadditive with respect to z.     

A low specific on-resistance SOI MOSFET with dual gates and a recessed drain

A low specific on-resistance(Ron,sp) integrable silicon-on-insulator(SOI) metal-oxide semiconductor field-effect transistor(MOSFET) is proposed and investigated by simulation.The MOSFET features a recessed drain as well as dual gates,which consist of a planar gate and a trench gate extended to the buried oxide layer(BOX)(DGRD MOSFET).First,the dual gates form dual conduction channels,and the extended trench gate also acts as a field plate to improve the electric field distribution.Second,the combination of the trench gate and the recessed drain widens the vertical conduction area and shortens the current path.Third,the P-type top layer not only enhances the drift doping concentration but also modulates the surface electric field distributions.All of these sharply reduce Ron,sp and maintain a high breakdown voltage(BV).The BV of 233 V and Ron,sp of 4.151 mΩ·cm2(VGS = 15 V) are obtained for the DGRD MOSFET with 15-μm half-cell pitch.Compared with the trench gate SOI MOSFET and the conventional MOSFET,Ron,sp of the DGRD MOSFET decreases by 36% and 33% with the same BV,respectively.The trench gate extended to the BOX synchronously acts as a dielectric isolation trench,simplifying the fabrication processes.     

Penetrating view of nano-structures in Aleochara verna spermatheca and flagellum by hard X-ray microscopy

A penetrating view of the three-dimensional nanostructure of female spermatheca and male flagellum in the species Aleochara verna is obtained with 100-nm resolution using a hard X-ray microscope, which provides a fast noninvasive imaging technology for insect morphology. Through introducing Zernike phase contrast and heavy metal staining, images taken at 8 keV displayed sufficient contrast for observing nanoscale fine structures, such as the spermatheca cochleate duct and the subapex of the flagellum, which have some implications for the study of the sperm transfer process and genital evolution in insects. This work shows that both the spatial resolution and the contrast characteristic of hard X-ray microscopy are quite promising for insect morphology studies and, particularly, provide an attractive alternative to the destructive techniques used for investigating internal soft tissues.     

Semipolar (11\bar 2\bar 2) ZnO thin films grown on LaAlO3‐buffered LSAT (112) single crystals by pulsed laser deposition

Semipolar (11\bar 2 \bar 2) ZnO was successfully grown on (112) LaAlO₃/(LaAlO₃)_0.29(Sr₂AlTaO₆)_0.35 substrate by pulsed laser deposition. The epitaxial relationship is [11\bar 23]_{\rm ZnO} // [11\bar 1]_{\rm LAO/LSAT} with the polar axis of [000\bar 1]_{\rm ZnO} pointing to the surface. For ZnO films with thickness of 1.6 μm, the threading dislocation density is ～1 × 10⁹ cm^–2, and the density of basal stacking faults is below 1 × 10⁴ cm^–1. The (11\bar 2 \bar 2) ZnO exhibits strong D⁰X emissions with a FWHM of 9 meV and very few green–yellow emissions in the low‐temperature (10 K) and room‐temperature photoluminescence spectra, respectively.

     

基于GIS和USLE模型的巢湖流域土壤侵蚀评价

土壤侵蚀是全世界都关心的土地资源与环境保护问题。巢湖作为中国第五大淡水湖,近年来由于水体富营养化产生的水华现象引起多方重视,对巢湖流域土壤侵蚀评估对于环境保护战略与土地规划政策具有重要的意义。基于GIS平台,采用通用土壤流失方程(USLE)来评估巢湖流域14县/区2000年到2010年土壤侵蚀空间分布变化趋势。研究表明:(1)巢湖流域土壤侵蚀严重区域主要分布在金安区、舒城县、居巢区以及含山县的丘陵地区,即杭埠河-丰乐河流域、裕溪河流域与柘皋河流域的上游地区;(2)从2000年到2010年,土壤微度侵蚀、强度侵蚀、极强度侵蚀和剧烈侵蚀区域占巢湖流域总面积比例分别减少了0.5%、0.05%、0.21%和0.23%,而轻度侵蚀、中度侵蚀区域所占比例分别增加了0.98%和0.01%,总体呈现土壤强度侵蚀、极强度侵蚀与剧烈侵蚀区域向轻、中度侵蚀转移的趋势。(3)植被覆盖度变化是巢湖流域土壤侵蚀分级发生变化的主要原因,总体上,2000~2010年研究区由于植被覆盖度的波动性增加呈现土壤侵蚀分级波动性降低的趋势。     

Optimizing Design for the Traveling Wave Electrodes in Low-Drive High-Speed Electro-Optic Polymer Modulators

Electro-optic (EO) polymer modulators are very promising in the realization of cost-effective and high-performance optical transmissions. In this article, general strategies and specific designs of the traveling wave electrodes in EO polymer modulators were presented to reduce the modulator drive power while maintaining a broadband response. The optimum device parameters and corresponding conditions were estimated using finite element method based on electrode design. In calculating the results, the comprehensive characteristics of polymer modulator with 1.21 V half-wave voltage and 91 GHz bandwidth was demonstrated with electro-optic interaction length is 20 mm, electro-optic coefficient is 55 pm/V, and operation wavelength is 1.319 μm. These results agree with the 0.8 V half-wave voltage and 30 mm electro-optic interaction length reported in Science. In the five designs presented, a hybrid electrode structure combining CPW and microstrip lines were advanced. The characteristics of this structure are like that of microstrip lines with a single-arm electrode on one arm of the waveguide, but it solves the problem of microstrip to coaxial line transition and corona polarization.     

Dynamical study on the stimulated processes of an exciton and a biexciton in a polymer

By applying a femtosecond stimulating pulse, we theoretically study the stimulated processes of an exciton and a biexciton in a polymer within the framework of an extended Su–Schrieffer–Heeger tight-binding model. For an exciton, it is obtained that the stimulated emission and absorption between the intragap levels take place with the same probability, by which we will not get the light amplification. However, the light amplification can be realized by the stimulated emission between the intragap levels in a biexciton, which is found to have two different modes. Finally, effect of the stimulating energy and intensity on the stimulated processes is separately analyzed. These results might be of great importance for further improving the optical applications of polymers, especially for optimizing the polymer laser properties.     

Scheduling policies for a repair shop problem

In this paper, we analyze a repair shop serving several fleets of machines that fail from time to time. To reduce downtime costs, a continuous-review spare machine inventory is kept for each fleet. A spare machine, if available on stock, is installed instantaneously in place of a broken machine. When a repaired machine is returned from the repair shop, it is placed in inventory for future use if the fleet has the required number of machines operating. Since the repair shop is shared by different fleets, choosing which type of broken machine to repair is crucial to minimize downtime and holding costs. The optimal policy of this problem is difficult to characterize, and, therefore, is only formulated as a Markov Decision Process to numerically compute the optimal cost and base-stock level for each spare machine inventory. As an alternative, we propose the dynamic Myopic(R) policy, which is easy to implement, yielding costs very close to the optimal. Most of the time it outperforms the static first-come-first-served, and preemptive-resume priority policies. Additionally, via our numerical study, we demonstrate that repair shop pooling is better than reserving a repair shop for each fleet.