等离子体结合六甲基二硅胺烷处理提升增透膜抗真空污染性能研究

本文采用溶胶-凝胶法制备了SiO₂增透膜,然后对其进行等离子体结合六甲基二硅胺烷（HMDS）表面改性处理。研究了后处理改性对增透膜表面形貌、微观结构、光学性能及激光损伤性能的影响规律,获得了抗真空有机污染的二氧化硅增透膜。结果表明,增透膜在采用等离子体结合HMDS表面改性处理后,膜层收缩、粗糙度下降、极性羟基等有机基团含量减少;两步后处理改善了增透膜膜层结构和光学性能,显著提高了膜层疏水能力和真空条件下的抗污染性能,并且对溶胶-凝胶二氧化硅增透膜的高损伤阈值属性不产生影响。     

微透镜阵列光学相控阵扫描技术研究进展

光学相控阵光束扫描技术在激光雷达、空间光通信和光开关等领域拥有巨大的应用潜力。微透镜阵列光学相控阵可以通过微透镜阵列间μm量级的相对位移同时对多个出射光束的二维倾斜相位进行调制,从而实现大角度二维光束扫描,具有出射口径大、结构简单、体积小、微惯性、多功能等优点。首先介绍了微透镜阵列光学相控阵的扫描原理,之后对微透镜阵列光学相控阵国内外的发展现状、应用和现阶段存在的问题进行了阐述,最后对微透镜阵列光学相控阵的发展趋势进行了展望。

     

吸收波长和吸收效率可控的超材料吸收器

为了使超材料完美吸收器(metamaterial perfect absorber,MPA)能够同时实现吸收效率和吸收波长的控制,本文提出利用二氧化钒(VO2)和石墨烯作为MPA的材料,通过对MPA的结构设计,在红外波段实现了高吸收,吸收效率最高可达99％.研究发现通过改变VO2的温度和石墨烯的化学势,可同时实现MPA...     

激光惯性约束聚变中光学汤姆逊散射研究进展

当前,激光惯性约束聚变在越来越接近点火的极端能量密度条件下,实验与模拟的偏离逐渐增大,一个关键原因是缺乏对黑腔等离子体状态及其影响黑腔能量学和内爆对称性的细致研究和判断。光学汤姆逊散射主动式、诊断精确、参数完备的优点,使之成为激光惯性约束聚变黑腔等离子体状态参数精密诊断的标准方法。中国面向激光惯性约束聚变研究的光学汤姆逊散射实验技术的发展与神光系列激光装置的建设和在其上开展的物理实验紧密相关。近年来,四倍频汤姆逊散射实验技术在神光III原型和100 kJ激光装置上相继建立,部分实验结果不仅加深了对激光惯性约束聚变靶物理的认识,还反映了实验条件对汤姆逊散射诊断的影响,促进了实验技术的精密化发展。在未来,还需要进一步发展多支路汤姆逊散射、五倍频汤姆逊散射和超热相干汤姆逊散射等新技术,面向点火黑腔条件,大幅提升激光等离子体状态参数的诊断精度,开展新物理机制的探索和研究,在激光惯性约束聚变和其他高能量密度物理科学领域发挥更重要的作用。     

PARAMETER ESTIMATION OF SPATIAL AR MODEL

Consider a stable AR model of two parameter spatial series {X_t, t∈N~2}, i. e. {X_(t)t∈N~2} is homogeneous and satisfies the following difference equationX_t-sum from n=s∈相似文献   

多项式插值算法的舍入误差分析

本文定义了多项式插值算子的条件数和多项式插值算法的数值稳定性等概念.主要研究结果是:若n和Y_max不太大,当结点等距分布时,Lagrange插值和Newton插值算法都是数值稳定的.但是不论结点如何分布,上述两法的外推计算可能是数值不稳定的.文中数值例子验证了这些理论结果.     

运用三维离散元技术模拟落锤撞击下奥克托今颗粒的点火燃烧过程

炸药颗粒的点火燃烧过程一直是人们关注的热点问题。近年来,三维离散元技术在中尺度观测颗粒材料的动力学过程中拥有显著优势。炸药燃烧属于颗粒材料的反应动力学,运用三维离散元技术(DM3)可以有效地观测炸药燃烧传播的过程。以奥克托今(HMX)颗粒为例,本文成功模拟并观测到了HMX颗粒的燃烧反应程度,确定了颗粒开始燃烧反应的时间,以及燃烧反应传播的时间。同时,结合落锤冲击颗粒的三维图像以及其表观压强和放热功率,得到了HMX颗粒燃烧反应、燃烧传播的整个反应动力学过程,包括颗粒在冲击加载下碎化塑性变形的过程,颗粒燃烧反应放热的过程,落锤回弹颗粒喷射的过程等。同时,进一步说明了尖顶颗粒更利于颗粒点火,平顶颗粒有抑制颗粒点火的能力。     

剪切形变下掺杂及缺陷对MoS2电子结构的影响

本文利用密度泛函理论,研究剪切形变下掺杂改性及不同类型缺陷对MoS2电子结构的影响。发现：剪切形变下,MoS2+P体系为相对最稳定的结构,掺杂改性相较于缺陷对模型稳定性影响更小;模型MoS2+P+Se中P-Mo键易形成共价键,而其中的Se-Mo键和MoS2+P-Mo-S模型中的P-Mo键,易形成离子键;掺杂使MoS2模型能隙变大,而缺陷使能隙减小,且S和Mo原子共缺陷的模型带隙为0;缺陷相较于掺杂改性模型,更能使Mo原子周围增加电荷聚集度,带隙值更低,更能影响或调控模型的电子结构。     

Deposition pattern of drying droplets

The drying of liquid droplets is a common daily life phenomenon that has long held a special interest in scientific research. When the droplet includes nonvolatile solutes, the evaporation of the solvent induces rich deposition patterns of solutes on the substrate. Understanding the formation mechanism of these patterns has important ramifications for technical applications,ranging from coating to inkjet printing to disease detection. This topical review addresses the development of physical understanding of tailoring the specific ring-like deposition patterns of drying droplets. We start with a brief introduction of the experimental techniques that are developed to control these patterns of sessile droplets. We then summarize the development of the corresponding theory. Particular attention herein is focused on advances and issues related to applying the Onsager variational principle (OVP) theory to the study of the deposition patterns of drying droplets. The main obstacle to conventional theory is the requirement of complex numerical solutions, but fortunately there has been recent groundbreaking progress due to the OVP theory. The advantage of the OVP theory is that it can be used as an approximation tool to reduce the high-order conventional hydrodynamic equations to first-order evolution equations,facilitating the analysis of soft matter dynamic problems. As such, OVP theory is now well poised to become a theory of choice for predicting deposition patterns of drying droplets.     

Spiking patterns of a minimal neuron to ELF sinusoidal electric field

Neuron as the main information carrier in neural systems is able to generate diverse spiking trains in response to different stimuli. Neuronal spiking patterns are related to the information processing in neural system. This paper investigates the dynamical behaviors of a two-dimensional minimal neuron model exposed to externally-applied extremely low frequency (ELF) sinusoidal electric field (EF). By numerical stimulation, it is found that neuron can exhibit different spiking patterns such as p:q mode-locking (i.e. a periodic oscillation defined as p action potentials generated by q cycle stimulations) and chaotic behaviors, depending on the values of stimulus frequencies. Transitions between different spiking patterns during exposure to the external EF are explored by interspike intervals (ISIs) and average firing rate. It is found that frequencies of the external EF can act as a bifurcation parameter, whose small change can cause the transition in neuronal behaviors. It is shown that a rich bifurcation structure including period-adding without chaos and mode-locking alternated with chaos suggests frequency discrimination of the neuronal firing patterns. Our results can provide a useful insight into the organization of similar bifurcation structures in excitable systems such as neurons under periodic forcing. Through detail analysis of the spiking patterns, we have explained how neuron’s information (spiking patterns) encodes the stimulus information (frequency), and vice versa.