基于k-分辨-FB级数展开的多分量LFM信号分离

针对傅里叶-贝塞尔变换(FBT)难以估计和有效分离多分量LFM信号的问题,提出了一种k分辨-FB(k-FB)级数展开结合dechirp的信号分离与估计算法。在FB级数的基础上引入k分辨参数,通过理论推导,得出了信号频率与级数的关系,证明了参数估计精度与k取值正相关。通过解线频调和k-FB级数计算,实现了信号分离重构和参数估计。在不同信噪比、信号功率比和k分辨条件下对信号的分离精度进行了仿真研究,并与基于分数阶傅里叶变换(FrFT)的方法进行了对比。仿真结果验证了算法的有效性。     

中水回用前景及其实际意义

概述了中水及中水回用的概念,分析了目前中水回用中存在的问题,探讨了水源热泵技术的应用。     

密度测量实验中仪器的正确使用与巧读数据

结合实验仪器的结构特点与工作原理,分别介绍了游标卡尺、螺旋测微计和物理天平的正确使用以及巧读数据的方法和步骤,指出并分析了实验教学过程中,在使用游标卡尺、螺旋测微计和物理天平及读数中常见的一些错误和问题。     

Estimating functionals of one-dimensional Gibbs states

Summary Some estimators of maximum likelihood type are constructed for estimating functionals of one-dimensional Gibbs states. We also show that those estimators are strongly consistent, asymptotically normal and asymptotically efficient.     

Effect of ion impinging on the microstructure and field emission of carbon nanotubes

Effects of ion impinging on the microstructure and field electron emission properties of screen-printed carbon nanotube films were investigated. We observed that the plasma treatment modified the microstructure of CNTs along with the remarkable increase of emission site density. With the prolongation of ion impinging time, the emission current falls down first, and then rises up to higher than that of the untreated films. It is proposed that the change of emission characteristics is due to the different emission mechanisms. After the treatment, electrons are emitted predominantly from the nano-nodes on the tube wall instead from the nanotube tips.     

CAP-子群与p-幂零性

设G是有限群。H是G的一个正规子群。P是|H|的一个素因子。P是H的一个Sylow p-子群。若下列条件之一满足。则H是p-幂零：1)P的极大子群都是G的CAP-子群且(|H|，P-1)=1；2)P的二次极大子群都是G的CAP-子群且(|H|，P^2-1)=1。特别地，若进一步假设G／H为P-幂零且(|G|，P-1)=1或(|G|，P^2-1)=1。则G自身亦为P-幂零。     

网络环境下图书馆数字参考咨询服务的模式与特点

文章对目前网络环境下数字参考咨询服务的几种主要模式与特点，进行了阐述与探讨。     

The Difference of the Pulmonary-Artery Pressure of the Migrants from Difference Elevation at the 4636 - 4907 m Altitude

Study Objective： To compare and analyze the changes of the pulmonary-artery pressure of the migrants coming from different elevation in the hypoxic environment of 4636 - 4907 m extreme altitude. To explore the susceptibility to hypoxic pulmonary-artery hypertension （PH） in the subjects from different altitude and profession. Methods： By using Color Doppler Ultmsonography （CDU）, measuring the pulmonary-artery pressure of 207 healthy men, who had continuously being lived and worked at the extreme altitude for more than six months, and then were divided into three groups according to their profession and the altitude of original living place. Results： There was a significant difference in the outcomes of pulmonary-artery pressure from the 3 groups. Conclusions： Altitude of original living place, labor intensity are some of factors that impact the pulmonary-artery pressure of the people who exposure to a hypoxic environment. The pulmonary- artery pressure of person without strenuously physical work experience was more sensitive to hypoxic surroundings than that of labor workers. It was not always the fact at an extreme altitude that the moderate altitude mountaineers were superior to other migrants from a lower altitude or plain. The higher PH was found in the groups of the moderate altitude mountaineers and labor workers. It is unlikely certain that one with PH would surfer from HAPE.     

苯在Ru-Zn/Ru（0001）合金表面上的吸附——密度泛函研究

为了理解苯在Ru-Zn合金催化剂上的部分加氢催化机理,采用密度泛函方法对苯在Ru-Zn/Ru（0001）面上的吸附进行理论研究。计算结果表明,当苯的碳原子或者共轭双键直接位于表面Zn原子的atop位时,其吸附热较Ru（0001）面上的类似吸附状态下降约60%.Zn原子与苯环C原子之间的排斥作用导致苯环的成键轨道与表面Ru原子的价层轨道之间的空间对称性下降,从而不利于苯与合金表面的键合。当吸附位离开Zn原子时,邻近Zn原子对于苯的吸附基本没有影响。     

Characterizations of Tb:Zn2SiO4 films on silicon wafer prepared by sol-gel dip-coating and solid-phase reaction

Terbium-doped Zn_2SiO_4 films were successfully prepared on Si wafers by a simple sol-gel dip-coating and solid-phase reaction method of ZnO and SiO_2. X-ray diffraction (XRD) and UV－Vis absorption results revealed that films processed below 850℃ were ZnO in wurzite structure, and films processed above 850℃ were Zn_2SiO_4 in wellimite structure. Photoluminescence measurements of the Tb-doped Zn_2SiO_4 films showed two strong emission bands at 490 and 545nm. The photoluminescence lifetime was 4.6ms.