纳米晶软磁合金中的结构对技术磁性的影响——Ⅱ.磁弹耦合作用

对磁弹耦合在决定纳米晶软磁合金宏观磁性中的作用进行了探讨,高场磁化规律以及正电子湮没测量表明:对Fe_73.5Cu₁Nb₃Si_13.5B₉合金,准位错偶极子造成的应力场对畴壁的钉扎效应是造成纳米晶软磁合金矫顽力的重要原因;结构缺陷造成的应力场与磁致伸缩的耦合作用对纳米晶软磁性能有重要的影响.在结构各向异性和磁弹耦合能共同作用下可解释纳米晶合金表现出最佳软磁性能.     

Effective-Field Theory on High Spin Systems with Biaxial Crystal Field

Based on the effective-field theory with self-spin correlations and the differential operator technique,physical properties of the spin-2 system with biaxial crystal field on the simple cubic, body-centered cubic, as well as faced-centered lattice have been studied. The influences of the external longitudinal magnetic field on the magnetization,internal energy, specific heat, and susceptibility have been discussed in detail. The phenomenon that the magnetization in the ground state shows quantum effects produced by the biaxial transverse crystal field has been found.     

e-A深度非弹性散射中胶子辐射振幅的新计算方法

在e-A深度非弹性散射过程中, 喷注穿过冷核介质时, 多重散射诱导胶子辐射会导致对碎裂函数的修正及喷注的能量损失.前期研究中关于计算e-A深度非弹性散射中胶子辐射振幅的两种方法: 螺旋振幅近似和微扰QCD严格计算都异常繁杂. 本文发展了一种新的方法, 可以方便计算出多重散射导致胶子辐射的振幅, 得到的碎裂函数的修正以及能量损失与严格计算的结果一致.     

变系数Leslie模型在污染环境下生存问题的研究

研究了具有变系数Leslie模型在环境污染下种群的生存问题.利用微分方程的定性理论及比较定理,给出了种群弱持续生存和灭绝的条件.     

不连续双斜向内肋管纵向涡流动显示

利用染色线流动显示方法,显示并分析了不同雷诺数下不连续双斜向内肋管管内流场。流动显示实验结果表明不连续双斜向内肋管管内存在较强的贴近壁面的纵向涡,纵向涡沿流向可持续约一倍管径距离,并且纵向涡的强度随雷诺数的增加而增强。     

中物院远红外自由电子激光实验研究

中国工程物理研究院基于射频直线加速器技术的远红外自由电子激光(FIR-FEL)实验取得阶段性进展,于2005年3月24晚8时30分首次出光, 并多次重复. 中心波长115μm, 谱宽1%.介绍了实验系统的主要组成部分和主要实验结果.     

298K毛吸附溴化烷基三甲铵的性质及自由能

用液 /固吸附计量置换模型 ( SDM- A) ,研究了 2 98K羊毛纤维吸附溴化烷基三甲铵阳离子表面活性剂 CTAB和 DTAB的吸附等温线 ,结果表明它们均遵从 SDM- A的线性作图关系 .用 SDM-A的线性参数βα 和 q/z很好地描述了碳氢链长及加盐效应对于吸附性质的影响规律 ,特别是能定量地描述加盐效应对于吸附同时具有的促进和抵消两种相反作用的程度 ,并用 SDM- A的热力学 ,由线性参数计算得到了不同体系的吸附亲和能 ΔGA,解吸能 ΔGD 及总过程的自由能 ΔGP.一个吸附体系中 ,ΔGA 为常数且为较大的负值 ;ΔGD 为随溶液体相浓度 c增大而增大的正值 ;ΔGP为与 lgc呈线性关系的较小的负值 .计算所得结果能很好地解释实验事实 ,并可从更深层次上揭示吸附机理 .     

BEPC中电子云导致的束团横向尺寸增长研究

多束团正电子储存环中可能发生电子云不稳定性. 由于电子云导致的束团横向尺寸增长已经成为提高对撞机对撞亮度的主要限制因素之一. 介绍了在BEPC储存环中, 利用条纹相机直接测量由于电子云导致的束团横向尺寸增长结果, 并与模拟计算进行了比较.     

B(0,N)-graded Lie superalgebras coordinatized by quantum tori Dedicated to Professor Sheng GONG on the occasion of his 75th birthday

We use a fermionic extension of the bosonic module to obtain a class of B(0, A)graded Lie superalgebras with nontrivial central extensions.     

Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory

The effects of Si doping on the structural and electrical properties of Ge₂Sb₂Te₅ film are studied in detail. Electrical properties and thermal stability can be improved by doping small amount of Si in the Ge₂Sb₂Te₅ film. The addition of Si in the Ge₂Sb₂Te₅ film results in the increase of both crystallization temperature and phase-transition temperature from face-centered cubic (fcc) phase to hexagonal (hex) phase, however, decreases the melting point slightly. The crystallization activation energy reaches a maximum at 4.1 at.% and then decreases with increasing dopant concentration. The electrical conduction activation energy increases with the dopant concentration, which may be attributed to the increase of strong covalent bonds in the film. The resistivity of Ge₂Sb₂Te₅ film shows a significant increase with Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460 °C annealing increases from 1 to 11 mΩ cm compared to the undoped Ge₂Sb₂Te₅ film. Current-voltage (I-V) characteristics show Si doping may increase the dynamic resistance, which is helpful to writing current reduction of phase-change random access memory.