一类二阶三点边值问题单调正解的存在性

利用范数形式的锥上不动点定理,研究了一类二阶微分方程三点边值问题单调正解的存在性．分别给出了齐次和非齐次边界条件下的三点边值问题单调正解存在的充分条件,确定了解曲线的凹凸性,并且给出了一个应用实例．     

大学形象及其塑造

大学形象是大学无形的财富，她由自然形象、历史形象、品牌形象、校长形象、教师形象、校园文化形象构成，既是学校走向成功的结果，更是学校走向新的成功的更大的前提。文章就如何塑造大学形象提出了建设性意见。     

变系数Leslie模型在污染环境下生存问题的研究

研究了具有变系数Leslie模型在环境污染下种群的生存问题.利用微分方程的定性理论及比较定理,给出了种群弱持续生存和灭绝的条件.     

Carnot-Caratheodory空间中的变换论

Klein发表著名的埃尔兰根纲领,由群论角度研究了空间变换群的不变量,从而引进了各种不同的几何学．本文利用Felix Klein的观念,研究Carnot-Caratheodory空间{M,Q,g}(又称为次黎曼流形)上的类似问题,给出了次黎曼流形中的共形不变量和射影不变量．本文给出的共形和射影不变量可视为黎曼情形的一种自然推广．由于次黎曼流形与黎曼流形之间有着本质的差异,故此,本文通过次黎曼流形上存在的唯一非完整联络(Nonholonomic connections)来刻画所提的问题．     

同步电机定子绕组不对称状态的分析方法——Ⅱ.参数的计算方法

参数计算是分析电机绕组不对称状态的关键问题。用多回路法分析同步电机定子绕组不对称状态时所用的参数,与绕组正常时的参数不同,它包括定子绕组每个支路、转子各阻尼回路和励磁绕组的自感系数和互感系数。定子支路参数可以由单个线圈参数组成。本文在考虑铁心饱和的情况下,研究了参数计算的两种方法,即气隙磁导分析法和磁场数值分析法,并将它们应用于实际电机的计算,验证和比较了两种计算方法。     

代数体函数的定理

本文定义并研究了代数体函数的加法．结合杨乐的方法,将仪洪勋联系重值的亚纯函数唯一性定理推广到多值的代数体函数．     

A complete global solution to the pressure gradient equation

We study the domain of existence of a solution to a Riemann problem for the pressure gradient equation in two space dimensions. The Riemann problem is the expansion of a quadrant of gas of constant state into the other three vacuum quadrants. The global existence of a smooth solution was established in Dai and Zhang [Z. Dai, T. Zhang, Existence of a global smooth solution for a degenerate Goursat problem of gas dynamics, Arch. Ration. Mech. Anal. 155 (2000) 277-298] up to the free boundary of vacuum. We prove that the vacuum boundary is the coordinate axes.     

B(0,N)-graded Lie superalgebras coordinatized by quantum tori Dedicated to Professor Sheng GONG on the occasion of his 75th birthday

We use a fermionic extension of the bosonic module to obtain a class of B(0, A)graded Lie superalgebras with nontrivial central extensions.     

Formation of Interfacial Layers in LaAlO3/Silicon during Film Deposition

We have studied the interracial reactions between amorphous LaAlO3 thin films and Si substrates, using high- resolution transmission electron microscopy and x-ray photoelectron spectroscopy. It has been shown that the interracial layer between LaAlO3 film and Si substrate chemical states show that the ratio of La 4d3/2 to Al 2p is SiLaxAlyOz. The depth distributions of La, Si and Al of the interfacial layer remains unchanged with the depth compared to that of the LaAlO3 film. Moreover, the Si content, in the interracial layer gradually decreases with increasing thickness of the interracial layer. These results strongly suggest that the Al element is not deficient in the interracial layer, as previously believed, and the formation of a SiLaxAlyOz interracial layer is mainly due to the diffusion of Si from the substrate during the LaAlO3 film deposition. With the understanding of the interracial layer formation, ones can control the interface characteristics to ensure the desired performances of devices using high-k oxides as gate dielectrics.     

Two New Eremophilenolides from Ligularia muliensis

Many Ligularia species have long been used as traditional folk medicine for theirantibiotic, antiphlogistic and antitussive activities1, and were found to be an importantsource of eremophilane. In the course of our search for bioactive sesquiterpenoids, w…