多元件谐振腔的等价腔

本文使用光学变换矩阵方法，分析了多元件谐振腔的等价腔问题。发展了等价腔的一些概念和方法，推出了在普遍情况下，等价腔各参量与原谐振腔各参量之间的解析关系，并得到了一组不变量；同时，还澄清了一些关于等价腔的错误看法和易混淆之处。     

三维回旋自共振微波放大器的理论计算

给出了三维回旋自共振微波放大器（ＣＡＲＭ）的电于运动方程和光场演化方程，并在忽略束流空间电荷效应的前提下，编制了单模放大器程序。利用数值模拟详细考察了电子束束流质量对微波输出功率的影响，模拟结果与实验值符合得很好。     

Richards模型在蔬菜生长预测中的应用

本文从 Richards模型的数学表达出发 ,阐述了模型中各参数初始值的确定以及优化过程 .并利用菜花和菠菜的试验数据建立其“最优”生长模型 .     

关于最优存贮策略的两点注记

本文统一论述了确定性静态存贮系统的最优存贮策略 ,并将具有数量折扣的经典 EOQ公式推广到了一般的确定性静态存贮系统 ;用机会损失 (后悔值 )概念对随机存贮系统的各种临界比公式进行了统一处理 .     

UPWIND FINITE VOLUME SCHEMES FOR SEMICONDUCTOR DEVICE

The mathematical model of semiconductor devices is described by the initial boundary value problem of a system of three nonlinear partial differential equations. One equation in elliptic form is for the electrostatic potential; two equations of convection-dominated diffusion type are for the electron and hole concentrations. Finite volume element procedure are put forward for the electrostatic potential, while upwind     

关于《一类奇异边值问题的正解》的注记

文[4]通过构造反例断言文[1]中定理的必要性证明有误,本文首先指出文[4] 的这个断言不正确,然后对文[4]中定理2.1作了本质性的改进.     

交通流非参数回归模型

交通流宏观参数流量、速度和占有率在交通工程和管理中具有非常重要的作用 ,对这三者关系的刻划反映了道路本身特性和交通流的规律。到目前为止 ,基本上采用线性或非线性的参数模型来描述 ,此类模型在应用中具有一定的局限性 ,并交通变量时间序列进行预测 ,数据拟合表明 ,选择适当的核函数或邻近数以及窗宽 ,可以达到比较满意的效果     

Evolution of the electronic structure of 1T-Cu(x)TiSe(2)

The electronic structure of a new charge-density-wave system or superconductor, 1T-Cu(x)TiSe(2), has been studied by photoemission spectroscopy. A correlated semiconductor band structure is revealed for the undoped case, which resolves a long-standing controversy in the system. With Cu doping, the charge-density wave is suppressed by the raising of the chemical potential, while the superconductivity is enhanced by the enhancement of the density of states, and possibly suppressed at higher doping by the strong scattering.     

Influence of the stress on magnetoelectric effect in magnetostrictive-PZT bilayers

In this letter, we investigate the influence of the stress on magnetoelectric (ME) effect in a magnetostrictive-PZT bilayer. ME voltage coefficient α*_E = δE / δH, where δE is the induced electric field for an applied alternating current (ac) magnetic field δH, is obtained by solving the stress-related piezoelectric constitutive equation and the conventional magnetostrictive equation with appropriate boundary condition. Based on the free-energy density function of the PZT film in stress state, we get the stress-related piezoelectric charge coefficient ^p d*₃₁ and dielectric permittivity ^pε*₃₃. After taking the cobalt ferrite (CFO) as magnetostrictive phase, it is found that α*_E increases with decreasing 2-d compressive stress for CFO-PZT, which not only is qualitatively consistent with previous experimental measurements, but also provides a possible route to improve the ME effect.